PD - 97137A
IRF8788PbF
HEXFET® Power MOSFET
Applications
Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
l
VDSS
RDS(on) max
Qg
30V 2.8m:@VGS = 10V 44nC
Benefits
l
l
l
l
l
l
l
Very Low Gate Charge
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
20V VGS Max. Gate Rating
100% tested for Rg
Lead-Free
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Description
The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry
standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in
synchronous buck operation including Rds(on) and gate charge to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Max.
Units
30
±20
V
24
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
190
PD @TA = 25°C
Power Dissipation
2.5
PD @TA = 70°C
Power Dissipation
1.6
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
ID @ TA = 70°C
A
19
c
W
W/°C
0.02
-55 to + 150
°C
Thermal Resistance
Parameter
RθJL
RθJA
g
Junction-to-Ambient fg
Junction-to-Drain Lead
Typ.
Max.
–––
20
–––
50
Units
°C/W
Notes through
are on page 9
www.irf.com
1
8/18/08
IRF8788PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.024
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.3
2.8
–––
3.04
3.8
V
V/°C Reference to 25°C, ID = 1mA
mΩ
VGS(th)
Gate Threshold Voltage
1.35
1.80
2.35
V
ΔVGS(th)
Gate Threshold Voltage Coefficient
–––
-6.59
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
95
–––
–––
Qg
Total Gate Charge
–––
44
66
Qgs1
Pre-Vth Gate-to-Source Charge
–––
12
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
4.7
–––
Qgd
Gate-to-Drain Charge
–––
14
–––
Qgodr
IGSS
Conditions
VGS = 0V, ID = 250μA
μA
nA
S
VGS = 10V, ID = 24A
VGS = 4.5V, ID = 19A
e
e
VDS = VGS, ID = 100μA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VDS = 15V, ID = 19A
VDS = 15V
nC
VGS = 4.5V
ID = 19A
Gate Charge Overdrive
–––
13.3
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
18.7
–––
See Figs. 17a & 17b
Qoss
Output Charge
–––
22
–––
nC
Rg
Gate Resistance
–––
0.54
1.09
Ω
td(on)
Turn-On Delay Time
–––
23
–––
tr
Rise Time
–––
24
–––
td(off)
Turn-Off Delay Time
–––
23
–––
tf
Fall Time
–––
11
–––
See Fig. 15a & 15b
Ciss
Input Capacitance
–––
5720
–––
VGS = 0V
Coss
Output Capacitance
–––
980
–––
Crss
Reverse Transfer Capacitance
–––
450
–––
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ns
pF
ID = 19A
RG = 1.8Ω
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
Max.
Units
–––
230
mJ
–––
19
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
ISM
(Body Diode)
Pulsed Source Current
–––
–––
VSD
(Body Diode)
Diode Forward Voltage
c
3.1
A
190
A
Conditions
MOSFET symbol
showing the
integral reverse
D
G
–––
–––
1.0
V
p-n junction diode.
TJ = 25°C, IS = 19A, VGS = 0V
–––
–––
0.75
V
TJ = 25°C, IS = 2.2A, VGS = 0V
trr
Reverse Recovery Time
–––
24
36
ns
TJ = 25°C, IF = 19A, VDD = 15V
Qrr
Reverse Recovery Charge
–––
33
50
nC
di/dt = 230A/μs
ton
Forward Turn-On Time
2
S
e
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF8788PbF
1000
1000
100
BOTTOM
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
1
≤60μs PULSE WIDTH
0.1
Tj = 25°C
BOTTOM
10
2.3V
2.3V
≤60μs PULSE WIDTH
0.01
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
VDS = 15V
≤60μs PULSE WIDTH
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
Tj = 150°C
1
0.1
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
T J = 150°C
10
T J = 25°C
1
ID = 24A
VGS = 10V
1.5
1.0
0.5
0.1
1
2
3
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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4
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF8788PbF
100000
16
C, Capacitance (pF)
Coss = Cds + Cgd
10000
Ciss
Coss
1000
ID= 19A
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Crss
VDS = 24V
VDS = 15V
12
8
4
0
100
1
10
0
100
1000
ID, Drain-to-Source Current (A)
1000
ISD , Reverse Drain Current (A)
60
80
100
120
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
TJ = 150°C
TJ = 25°C
10
100μsec
10
1msec
1
10msec
TA = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
1.0
0.2
0.4
0.6
0.8
1.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
40
Qg, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
100
20
1.2
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF8788PbF
2.5
VGS(th), Gate Threshold Voltage (V)
24
ID , Drain Current (A)
20
16
12
8
4
ID = 250μA
2.0
ID = 100μA
1.5
0
25
50
75
100
125
1.0
150
-75 -50 -25
TA , Ambient Temperature (°C)
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
τJ
0.1
R1
R1
τJ
τ1
R2
R2
R3
R3
R4
R4
R5
R5
R6
R6
R7
R7
R8
R8
τ5
τ6
τ7
τ8
τa
τ1
τ2
τ2
τ3
τ3
τ4
τ4
τ5
τ6
τ7
Ci= τi/Ri
Ci i/Ri
τ8
Ri (°C/W)
τι (sec)
0.0141064
0.0210000
0.2184000
0.8204000
4.7558194
0.4648000
28.9076170
15.1191958
0.000057
0.000286
0.000375
0.001902
0.004544
0.013931
0.038563
2.069546
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
1000
7
ID = 19A
6
5
4
TJ = 125°C
3
TJ = 25°C
2
2.0
4.0
6.0
8.0
10.0
EAS, Single Pulse Avalanche Energy (mJ)
RDS (on), Drain-to -Source On Resistance (mΩ)
IRF8788PbF
ID
6.4A
7.4A
BOTTOM 19A
TOP
800
600
400
200
0
25
VGS, Gate-to-Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V(BR)DSS
15V
D.U.T
RG
VGS
20V
DRIVER
L
VDS
tp
+
V
- DD
IAS
tp
A
0.01Ω
I AS
Fig 14a. Unclamped Inductive Test Circuit
V DS
VGS
RG
RD
VDS
90%
D.U.T.
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 15a. Switching Time Test Circuit
6
Fig 14b. Unclamped Inductive Waveforms
10%
VGS
td(on)
tr
td(off) tf
Fig 15b. Switching Time Waveforms
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IRF8788PbF
Driver Gate Drive
D.U.T
P.W.
+
+
-
-
•
•
•
•
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
*
RG
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
Period
VDD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
DUT
0
1K
20K
VCC
Vgs(th)
S
Qgodr
Fig 17a. Gate Charge Test Circuit
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Qgd
Qgs2 Qgs1
Fig 17b. Gate Charge Waveform
7
IRF8788PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
6
8
7
6
5
1
2
3
4
H
E
0.25 [.010]
A
6X
e1
8X b
0.25 [.010]
A
A1
MIL L IME T E R S
MAX
MIN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 B AS IC
1.27 B AS IC
MAX
.025 B AS IC
0.635 B AS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
e1
e
INCH E S
MIN
K x 45°
C
y
0.10 [.004]
8X L
8X c
7
C A B
FOOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECTIFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DIS GNAT ES LEAD - FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF8788PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.25mH, RG = 25Ω, IAS = 19A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/08
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