IRFH5007TRPBF

IRFH5007PbF HEXFET® Power MOSFET VDS 75 V R DS(on) max 5.9 mΩ Qg (typical) 65 nC RG (typical) 1.2 Ω (@V GS = 10V) ID (@Tmb = 25°C) h 100 A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 5.9mΩ) Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Lower Conduction Losses Enables Better Thermal Dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Base Part Number Package Type IRFH5007PBF PQFN 5mm x 6mm ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH5007TRPBF Absolute Maximum Ratings Max. Units VDS VGS Drain-to-Source Voltage Gate-to-Source Voltage 75 ±20 V ID @ TA = 25°C ID @ TA = 70°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 17 13 ID @ Tmb = 25°C ID @ Tmb = 100°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation 100 88 Parameter IDM PD @TA = 25°C c PD @ Tmb = 25°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range h 400 3.6 156 g 0.029 -55 to + 150 A W W/°C °C Notes  through † are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5007PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS Output Charge Min. 75 ––– ––– 2.0 ––– ––– ––– ––– ––– 100 ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.09 5.1 ––– -8.4 ––– ––– ––– ––– ––– 65 11 4.5 20 29.5 24.5 21 Conditions Max. Units ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA 5.9 mΩ VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 150μA ––– mV/°C VDS = 75V, VGS = 0V 20 μA VDS = 75V, VGS = 0V, TJ = 125°C 250 VGS = 20V 100 nA VGS = -20V -100 ––– S VDS = 15V, ID = 50A 98 ––– VDS = 38V VGS = 10V ––– nC ––– ID = 50A ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 1.2 10 14 30 11 4290 510 210 ––– ––– ––– ––– ––– ––– ––– ––– Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss e Ω ns pF VDD = 38V, VGS = 10V ID = 50A RG=1.8Ω See Fig.15 VGS = 0V VDS = 25V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR Diode Characteristics c Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton Typ. ––– ––– d Units mJ A Max. 250 50 Min. Typ. Max. Units h ––– ––– 100 c ––– ––– 400 A Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 38V di/dt = 500A/μs ––– ––– 1.3 V ––– 31 47 ns ––– 170 255 nC Time is dominated by parasitic Inductance e S e Thermal Resistance Parameter Junction-to-Mounting Base Junction-to-Case Junction-to-Ambient R θJC-mb R θJC (Top) R θJA f R θJA (