IRFH7921PbF
HEXFET® Power MOSFET
Applications
l
l
High Frequency Point-of-Load Synchronous Buck
Converter for Applications in Neworking &
Computing Systems
Optimized for Control FET Applications
VDSS
30V
RDS(on) max
Qg
8.5mΩ@VGS = 10V 9.3nC
Benefits
l
l
l
l
l
l
l
l
Very low RDS(ON) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
100% Tested for RG
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
PQFN 5X6 mm
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
30
V
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
± 20
ID @ TA = 25°C
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
12
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
34
IDM
Pulsed Drain Current
120
PD @TA = 25°C
Power Dissipation
15
c
PD @TA = 70°C
g
Power Dissipation g
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
A
W
3.1
2.0
g
0.025
-55 to + 150
W/°C
°C
Thermal Resistance
Parameter
f
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient
g
Typ.
Max.
Units
–––
7.9
°C/W
–––
40
Notes through
are on page 9
1
www.irf.com © 2013 International Rectifier
August 16, 2013
IRFH7921PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
∆ΒVDSS/∆TJ
RDS(on)
30
–––
–––
Breakdown Voltage Temp. Coefficient
–––
0.02
–––
Static Drain-to-Source On-Resistance
–––
7.1
8.5
–––
10.4
12.5
V
V/°C Reference to 25°C, ID = 1mA
mΩ
VGS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
∆VGS(th)
Gate Threshold Voltage Coefficient
–––
-6.2
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Forward Transconductance
27
–––
–––
Total Gate Charge
–––
9.3
14
Qgs1
Pre-Vth Gate-to-Source Charge
–––
2.2
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.2
–––
Qgd
Gate-to-Drain Charge
–––
3.2
–––
Qgodr
–––
2.7
–––
Qsw
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
4.4
–––
Qoss
Output Charge
–––
5.0
–––
nC
RG
td(on)
Gate Resistance
Turn-On Delay Time
–––
–––
1.4
12
2.4
–––
Ω
tr
Rise Time
–––
7.6
–––
td(off)
Turn-Off Delay Time
–––
14
–––
tf
Fall Time
–––
4.7
–––
Ciss
Input Capacitance
–––
1210
–––
Coss
Output Capacitance
–––
240
–––
Crss
Reverse Transfer Capacitance
–––
120
–––
IGSS
gfs
Qg
Conditions
VGS = 0V, ID = 250µA
µA
nA
S
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
e
e
VDS = VGS, ID = 25µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VDS = 15V, ID = 12A
VDS = 15V
nC
VGS = 4.5V
ID = 12A
See Fig.17 & 18
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ns
ID = 12A
RG=1.8Ω
See Fig.15
VGS = 0V
pF
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
Max.
Units
–––
29
mJ
–––
12
A
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
Min. Typ. Max. Units
–––
–––
3.9
A
(Body Diode)
Diode Forward Voltage
–––
–––
120
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
12
18
ns
Qrr
Reverse Recovery Charge
–––
11
17
nC
ton
Forward Turn-On Time
c
2
Conditions
MOSFET symbol
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 12A, VGS = 0V
S
e
TJ = 25°C, IF = 12A, VDD = 15V
di/dt = 300A/µs
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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August 16, 2013
IRFH7921PbF
1000
≤60µs PULSE WIDTH
TOP
Tj = 25°C
ID, Drain-to-Source Current (A)
100
BOTTOM
10
≤60µs PULSE WIDTH
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
Tj = 150°C
ID, Drain-to-Source Current (A)
1000
TOP
100
1
0.1
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
10
1
2.3V
2.3V
0.1
0.01
0.1
1
10
0.1
100
1000
100
1.6
100
TJ = 150°C
10
T J = 25°C
1
VDS = 15V
≤60µs PULSE WIDTH
0.1
ID = 15A
1.4
(Normalized)
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
VGS = 10V
1.2
1.0
0.8
0.6
1
2
3
4
5
6
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
www.irf.com © 2013 International Rectifier
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
August 16, 2013
IRFH7921PbF
10000
5.0
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
VGS , Gate-to-Source Voltage (V)
ID= 12A
C, Capacitance (pF)
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
VDS= 24V
VDS= 15V
4.0
3.0
2.0
1.0
100
0.0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
2
4
6
8
10
12
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100
T J = 150°C
10
T J = 25°C
1
100µsec
1msec
10
DC
1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10msec
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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August 16, 2013
IRFH7921PbF
16
2.5
VGS(th) , Gate Threshold Voltage (V)
14
ID, Drain Current (A)
12
10
8
6
4
2
0
2.0
ID = 25µA
1.5
1.0
0.5
25
50
75
100
125
150
-75 -50 -25
T J , Junction Temperature (°C)
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
1
τJ
0.1
R1
R1
τJ
τ1
R2
R2
R3
R3
R4
R4
τA
τ2
τ1
τ3
τ2
τ3
τ4
τ4
Ci= τi/Ri
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
0.001
1E-006
1E-005
0.0001
τA
Ri (°C/W)
τi (sec)
2.4768
0.000496
6.6412
0.014506
15.997
0.80399
14.892
34.4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com © 2013 International Rectifier
August 16, 2013
20
120
ID = 15A
18
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRFH7921PbF
16
14
12
T J = 125°C
10
8
T J = 25°C
6
4
ID
2.2A
3.1A
BOTTOM 12A
TOP
100
80
60
40
20
0
0
2
4
6
8
10 12 14 16 18 20
25
50
75
VGS, Gate -to -Source Voltage (V)
V DS
15V
V GS
VDS
+
V
- DD
IAS
20V
150
RD
D.U.T.
RG
DRIVER
D.U.T
RG
125
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
L
100
Starting T J , Junction Temperature (°C)
+
-V DD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
A
0.01Ω
tp
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 15a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
I AS
Fig 14b. Unclamped Inductive Waveforms
6
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
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August 16, 2013
IRFH7921PbF
D.U.T
Driver Gate Drive
P.W.
+
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Same Type as D.U.T.
Id
Vds
Vgs
50KΩ
12V
.2µF
.3µF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Qgs1 Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 17. Gate Charge Test Circuit
7
www.irf.com © 2013 International Rectifier
Fig 18. Gate Charge Waveform
August 16, 2013
IRFH7921PbF
PQFN 5x6 Option "E" Package Details
PQFN Part Marking
INTERNATIONAL
RECTIFIER LOGO
6
DATE CODE
XXXX
ASSEMBLY SITE CODE
(Per SCOP 200-002)
PART NUMBER
XYWWX
XXXXX
MARKING CODE
(Per Marking Spec.)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min. last 4 digits of EATI #)
(Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com © 2013 International Rectifier
August 16, 2013
IRFH7921PbF
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.39mH, RG = 25Ω, IAS = 12A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rthjc is guaranteed by design
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Revision History
Date
08/05/2013
Comments
•Updated the package drawing, on page 1.
•Updated the package outline drawing, on page 8.
•This drawing change is related to PCN "Hana-GTBF-GEM 5x6 PQFN
Public."
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
www.irf.com © 2013 International Rectifier
August 16, 2013
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
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Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.