IRFHS8242TRPBF

IRFHS8242PbF HEXFET® Power MOSFET VDS 25 V VGS max ±20 V RDS(on) max 13.0 mΩ (@VGS = 10V) Qg (typical) ( @ VGS = 4.5V) ID (@Tc(Bottom) = 25°C) TOP VIEW D 2 4.3 8.5 nC d G 3 D 6 D D 1 D S D D 5 D D 4 S D G S S 2mm x 2mm PQFN A Applications • System/Load Switch Features and Benefits Features Low RDSon (≤ 13.0mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRFHS8242TRPbF IRFHS8242TR2PbF PQFN 2mm x 2mm PQFN 2mm x 2mm results in Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage VGS ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ±20 9.9 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 8.0 21 ID @ TC(Bottom)= 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C IDM Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation 25 PD @TA = 70°C TJ Linear Derating Factor Operating Junction and d d 8.5d 17 TSTG Storage Temperature Range A 84 2.1 f V d c f Power Dissipation f Units 1.3 0.02 -55 to + 150 W W/°C °C Notes  through † are on page 2 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRFHS8242PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. BVDSS ΔΒVDSS/ΔTJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Parameter 25 ––– ––– 18 ––– ––– RDS(on) Static Drain-to-Source On-Resistance ––– ––– 10.0 17.0 13.0 21.0 VGS(th) ΔVGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient 1.35 ––– 1.8 -6.8 2.35 ––– IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 1.0 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 gfs Qg Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge ––– 19 ––– ––– -100 ––– 4.3 10.4 ––– ––– nC Qg Qgs ––– ––– VGS = 4.5V, VDS = 13V, ID = 8.5A VDS = 13V Gate-to-Source Charge ––– ––– 1.8 1.6 ––– ––– nC VGS = 10V ID = 8.5A (See Fig. 6 & 16) Ω h Total Gate Charge h h h Max. Units Qgd Gate-to-Drain Charge RG td(on) tr Gate Resistance Turn-On Delay Time ––– ––– 1.9 6.5 ––– ––– Rise Time Turn-Off Delay Time ––– ––– 19 5.4 ––– ––– Fall Time Input Capacitance ––– ––– 5.3 653 ––– ––– Output Capacitance ––– 171 ––– Reverse Transfer Capacitance ––– 78 ––– Min. Typ. td(off) tf Ciss Coss Crss Conditions V VGS = 0V, ID = 250μA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 8.5A VGS = 4.5V, ID = 6.8A V VDS = VGS, ID = 25μA mV/°C μA nA S ed e VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 8.5A d d d e VDD = 13V, VGS = 4.5V ns = 8.5Ad ID RG=1.8Ω See Fig.17 VGS = 0V pF VDS = 10V ƒ = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current c (Body Diode) Diode Forward Voltage VSD trr Reverse Recovery Time Reverse Recovery Charge Qrr ton Forward Turn-On Time Max. Units 8.5 d Conditions MOSFET symbol ––– ––– ––– ––– 84 ––– ––– 1.0 V ––– ––– 11 11 17 17 ns nC A showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 8.5A , VGS = 0V TJ = 25°C, IF = 8.5A , VDD = 13V di/dt = 280 A/μs d d e e S Time is dominated by parasitic Inductance Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA Parameter Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient (