IRFP064VPBF

PD - 95501A IRFP064VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 5.5mΩ G ID = 130A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. Units 130‡ 95 520 250 1.7 ± 20 130 25 4.7 -55 to + 175 A W W/°C V A mJ V/ns °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units ––– 0.24 ––– 0.60 ––– 40 °C/W 1 08/09/10 IRFP064VPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 60 ––– ––– 2.0 88 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance ––– LS Internal Source Inductance ––– Ciss Coss Crss EAS Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy‚ ––– ––– ––– ––– V(BR)DSS ∆V(BR)DSS/∆TJ IGSS Typ. ––– 0.067 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 26 200 100 150 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 5.5 mΩ VGS = 10V, ID = 78A „ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 78A„ 25 VDS = 60V, VGS = 0V µA 250 VDS = 48V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 260 ID = 130A 68 nC VDS = 48V 94 VGS = 10V, See Fig. 6 and 13 ––– VDD = 30V ––– ID = 130A ns ––– RG = 4.3Ω ––– VGS = 10V, See Fig. 10 „ Between lead, 5.0 ––– 6mm (0.25in.) nH G from package 13 ––– and center of die contact 6760 ––– VGS = 0V 1330 ––– VDS = 25V 290 ––– pF ƒ = 1.0MHz, See Fig. 5 1880…310† mJ IAS = 130A, L = 37µH D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 130‡ showing the A G integral reverse ––– ––– 520 S p-n junction diode. ––– ––– 1.2 V TJ = 25°C, IS = 130A, VGS = 0V „ ––– 94 140 ns TJ = 25°C, IF = 130A ––– 360 540 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ‚ Starting TJ = 25°C, L = 260µH RG = 25Ω, IAS = 50A. (See Figure 12) ƒ ISD ≤ 130A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 2 „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … This is a typical value at device destruction and represents operation outside rated limits. † This is a calculated value limited to TJ = 175°C . ‡ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A. www.irf.com IRFP064VPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 10 4.5V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 4.5V 10 1 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.0 TJ = 175 ° C 100 TJ = 25 ° C 10 V DS = 50V 20µs PULSE WIDTH 6.0 7.0 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 5.0 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 1 4.0 20µs PULSE WIDTH TJ = 175 ° C 10.0 ID = 70A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFP064VPbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 10000 C, Capacitance(pF) Coss = Cds + Cgd 8000 Ciss 6000 4000 Coss 2000 VGS , Gate-to-Source Voltage (V) 20 12000 ID = 130A VDS = 48V VDS = 30V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 Crss 0 1 10 0 100 0 50 VDS, Drain-to-Source Voltage (V) 10000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 10 0.1 0.0 TJ = 25 ° C V GS = 0 V 0.4 0.8 1.2 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 200 250 300 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 TJ = 175 ° C 1 150 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 QG , Total Gate Charge (nC) 2.4 100 100µsec 1msec 10 1 Tc = 25°C Tj = 175°C Single Pulse 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFP064VPbF 140 VDS LIMITED BY PACKAGE ID , Drain Current (A) 120 VGS D.U.T. RG 100 80 RD + -VDD V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 60 40 Fig 10a. Switching Time Test Circuit VDS 20 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 175 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 0.02 0.01 0.01 0.00001 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V L VDS D.U.T RG 20V DRIVER + V - DD IAS 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) IRFP064VPbF 600 ID 53A 92A BOTTOM 130A TOP 450 300 150 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFP064VPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T* ƒ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + ‚ - - „ +  RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRFP064VPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WIT H ASS EMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN THE ASS EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/2010 8 www.irf.com