IRFP150MPBF

IRFP150MPbF IR MOSFET™ Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Lead-Free V(BR)DSS 100V RDS(on) max. 0.036 ID 42A Description IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged device design that IR MOSFET™ devices are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. TO-247AD The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Base part number Package Type IRFP150MPbF TO-247AD G Gate D Drain Standard Pack Form Quantity Tube 25 S Source Orderable Part Number IRFP150MPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42 ID @ TC = 100°C IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current  30 140 PD @TC = 25°C Maximum Power Dissipation 160 W 1.1 ± 20 420 22 16 5.0 W/°C Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw VGS EAS IAR EAR dv/dt TJ TSTG Max. Units A V mJ A mJ V/ns -55 to + 175 °C 300 10 lbf•in (1.1N•m) Thermal Resistance Symbol RJC RCS RJA 1 Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.24 ––– Max. 0.95 ––– 40 Units °C/W 2020-05-28 IRFP150MPbF Electrical characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 ––– ––– 2.0 14 ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.11 ––– V/°C Reference to 25°C, ID = 1mA  ––– 0.036  VGS = 10V, ID = 23A  ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– S VDS = 25V, ID = 22A ––– 25 VDS = 100V, VGS = 0V µA ––– 250 VDS = 80V,VGS = 0V,TJ =150°C ––– 100 VGS = 20V nA ––– -100 VGS = -20V Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 11 56 45 40 110 15 58 LD Internal Drain Inductance ––– 5.0 ––– LS Internal Source Inductance ––– 13 ––– ––– ––– ––– ––– ––– ––– ID = 22A nC VDS = 80V VGS = 10V, See Fig.6 and 13  VDD = 50V ID = 22A ns RG= 3.6 RD= 2.3  See Fig.10 Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V pF VDS = 25V ƒ = 1.0MHz, See Fig.5 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode)  ––– ––– ––– 1900 450 230 Min. Typ. Max. Units ––– ––– ––– ––– 140 VSD Diode Forward Voltage ––– ––– 1.3 trr Qrr Reverse Recovery Time Reverse Recovery Charge ––– ––– 180 1.2 270 1.8 42 A V Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C,IS = 23A,VGS = 0V  ns TJ = 25°C ,IF = 22A µC di/dt = 100A/µs  Notes:      Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). VDD = 25V, TJ = 25°C, L = 1.7mH, RG = 25, IAS = 22A.(See fig. 12). ISD  22A, di/dt  180A/µs, VDD  V(BR)DSS, TJ  175°C. Pulse width  300µs; duty cycle  2%. Uses IRF1310N data and test conditions. 2 2020-05-28 IRFP150MPbF Fig. 1 Typical Output Characteristics Fig. 3 Typical Transfer Characteristics 3 Fig. 2 Typical Output Characteristics Fig. 4 Normalized On-Resistance vs. Temperature 2020-05-28 IRFP150MPbF Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area 2020-05-28 IRFP150MPbF Fig 10a. Switching Time Test Circuit Fig 9. Maximum Drain Current vs. Case Temperature Fig 10a. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction -to-Case 5 2020-05-28 IRFP150MPbF Fig. 12a. Unclamped Inductive Test Circuit Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig. 12b. Unclamped Inductive Waveforms Fig 13a. Basic Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit 2020-05-28 IRFP150MPbF Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel IR MOSFET™ 7 2020-05-28 IRFP150MPbF TO-247AD Package Outline (Dimensions are shown in millimeters (inches)) PG-TO247-3-21, -41, -44 DIMENSIONS A A1 A2 b b1 b2 c D D1 D2 E E1 E2 E3 e L L1 P Q S MILLIMETERS MIN. MAX. 4.70 5.30 2.20 2.60 1.50 2.50 1.00 1.40 1.60 2.41 2.57 3.43 0.38 0.89 20.70 21.50 13.08 17.65 0.51 1.35 15.50 16.30 12.38 14.15 3.40 5.10 1.00 2.60 5.44 19.80 20.40 3.85 4.50 3.50 3.70 5.35 6.25 6.04 6.30 DOCUMENT NO. Z8B00003327 REVISION 06 SCALE 3:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 25.07.2018 TO-247AD Part Marking Information 8 2020-05-28 IRFP150MPbF Revision History Date 05/28/2020 Comments     Updated datasheet with corporate template Updated Package picture-page1 Corrected from “Hexfet power MOSFET” to “ IR MOSFET™” -page1 &7 Corrected part marking from TO-247AC to TO-247AD on page 8. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 9 2020-05-28