IRFS7430TRLPBF

StrongIRFET™ IRFS7430PbF IRFSL7430PbF HEXFET® Power MOSFET Applications l Brushed motor drive applications l BLDC motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters l DC/AC inverters D G S IRFSL7430PbF IRFS7430PbF TO-262 D2-Pak 195A : : c D G G D2Pak IRFS7430PbF D S TO-262 IRFSL7430PbF G D S Gate Drain Source Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 6.0 Orderable Part Number IRFSL7430PbF IRFS7430PbF IRFS7430TRLPbF 500 ID = 100A Limited By Package 400 4.0 T J = 125°C 2.0 300 200 100 T J = 25°C 0.0 0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 ID (Package Limited) S ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m Ω) Package Type 40V 0.97m 1.2m 426A D Benefits l Improved gate, avalanche and dynamic dV/dt ruggedness l Fully characterized capacitance and avalanche SOA l Enhanced body diode dV/dt and dI/dt capability l Lead-free Base Part Number VDSS R DS(on) typ. max. ID (Silicon Limited) www.irf.com © 2014 International Rectifier 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback November 6, 2014 IRFS/SL7430PbF Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics Single Pulse Avalanche Energy Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy EAS (Thermally limited) EAS (Thermally limited) IAR EAR d Thermal Resistance Symbol RθJC RθJA c c d VGS TJ TSTG Units Max. 426 301 195 1524 375 2.5 ± 20 -55 to + 175 A W W/°C V °C 300 e k 760 1452 See Fig. 15, 16, 22a, 22b d Parameter Junction-to-Case Junction-to-Ambient (PCB Mount, steady-state) j Typ. ––– ––– l Max. 0.40 40 mJ A mJ Units °C/W Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ΔV(BR)DSS/ΔTJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance RG Notes:  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) ‚ Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by TJmax, starting TJ = 25°C, L = 0.15mH RG = 50Ω, IAS = 100A, VGS =10V. „ ISD ≤ 100A, di/dt ≤ 990A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 2 www.irf.com © 2014 International Rectifier Min. 40 ––– ––– ––– 2.2 ––– ––– ––– ––– ––– Typ. ––– 0.014 0.97 1.2 ––– ––– ––– ––– ––– 2.1 Max. ––– ––– 1.2 ––– 3.9 1.0 150 100 -100 ––– Units V V/°C mΩ V μA nA Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 100A VGS = 6.0V, ID = 50A VDS = VGS, ID = 250μA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V g g Ω … Pulse width ≤ 400μs; duty cycle ≤ 2%. † Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . ‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS . ˆ Rθ is measured at TJ approximately 90°C.. ‰ Limited by TJmax starting TJ = 25°C, L= 1mH, RG = 50Ω, IAS = 54A, VGS =10V. Š When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. http://www.irf.com/technical-info/appnotes/an-994.pdf Submit Datasheet Feedback November 6, 2014 IRFS/SL7430PbF Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) Min. 150 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 300 77 98 202 32 105 160 100 14240 2130 1460 2605 2920 Max. ––– 460 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units S nC Min. ––– Typ. ––– Max. 426 Units A ––– ––– 1524 A ––– ––– ––– ––– ––– ––– ––– 0.86 2.7 52 52 97 97 2.3 1.2 ––– ––– ––– ––– ––– ––– V V/ns ns Conditions VDS = 10V, ID = 100A ID = 100A VDS =20V VGS = 10V ID = 100A, VDS =0V, VGS = 10V VDD = 20V ID = 30A RG = 2.7Ω VGS = 10V VGS = 0V VDS = 25V ƒ = 1.0 MHz VGS = 0V, VDS = 0V to 32V VGS = 0V, VDS = 0V to 32V g ns pF g i h Diode Characteristics Symbol VSD dv/dt trr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current IS ISM d f 3 www.irf.com © 2014 International Rectifier c nC A Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 100A, VGS = 0V TJ = 175°C, IS = 100A, VDS = 40V TJ = 25°C VR = 34V, TJ = 125°C IF = 100A di/dt = 100A/μs TJ = 25°C TJ = 125°C TJ = 25°C Submit Datasheet Feedback g g November 6, 2014 IRFS/SL7430PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V 10 4.5V BOTTOM 100 4.5V ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 175°C Tj = 25°C 10 1 0.1 1 10 0.1 100 Fig 3. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 4. Typical Output Characteristics 1000 100 T J = 25°C TJ = 175°C 10 VDS = 25V ≤60μs PULSE WIDTH 1.0 ID = 100A VGS = 10V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 2 3 4 5 6 7 Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics 100000 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) 14.0 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Ciss 10000 Coss Crss 1000 ID= 100A 12.0 VDS= 32V VDS= 20V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V www.irf.com © 2014 International Rectifier 0 50 100 150 200 250 300 350 400 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback November 6, 2014 IRFS/SL7430PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 175°C 100 10 T J = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100μsec 1msec 100 10 10msec 1 VGS = 0V 0.1 0.1 0.0 0.5 1.0 1.5 2.0 0.1 2.5 1 10 100 VDS, Drain-toSource Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 2.5 47 Id = 1.0mA VDS= 0V to 32V 46 2.0 45 Energy (μJ) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) DC Tc = 25°C Tj = 175°C Single Pulse 44 43 1.5 1.0 42 0.5 41 0.0 40 0 -60 -40 -20 0 20 40 60 80 100120140160180 5 T J , Temperature ( °C ) 15 20 25 30 35 40 45 VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage RDS(on), Drain-to -Source On Resistance ( mΩ) 10 Fig 12. Typical COSS Stored Energy 6.0 VGS = 5.5V VGS = 6.0V VGS = 7.0V VGS = 8.0V 4.0 VGS =10V 2.0 0.0 0 200 400 600 800 1000 1200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFS/SL7430PbF Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 150°C and Tstart =25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs.Pulsewidth 800 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 100A 700 EAR , Avalanche Energy (mJ) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) 600 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFS/SL7430PbF 12 3.5 3.0 2.5 IRRM (A) VGS(th) , Gate threshold Voltage (V) 4.0 ID = 250μA ID = 1.0mA 2.0 ID = 1.0A 10 IF = 60A V R = 34V 8 TJ = 25°C TJ = 125°C 6 4 1.5 2 1.0 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 200 T J , Temperature ( °C ) 600 800 1000 Fig. 18 - Typical Recovery Current vs. dif/dt Fig 17. Threshold Voltage vs. Temperature 12 300 10 IF = 100A V R = 34V 8 TJ = 25°C TJ = 125°C IF = 60A V R = 34V 250 QRR (nC) IRRM (A) 400 diF /dt (A/μs) 6 TJ = 25°C TJ = 125°C 200 150 4 100 2 0 50 0 200 400 600 800 1000 0 200 diF /dt (A/μs) 400 600 800 1000 diF /dt (A/μs) Fig. 19 - Typical Recovery Current vs. dif/dt Fig. 20 - Typical Stored Charge vs. dif/dt 260 IF = 100A V R = 34V QRR (nC) 220 TJ = 25°C TJ = 125°C 180 140 100 60 0 200 400 600 800 1000 diF /dt (A/μs) Fig. 21 - Typical Stored Charge vs. dif/dt 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFS/SL7430PbF Driver Gate Drive D.U.T ƒ - ‚ - - „ * D.U.T. ISD Waveform Reverse Recovery Current +  RG • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period P.W. + V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor InductorCurrent Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG 20V VGS + V - DD IAS A 0.01Ω tp I AS Fig 22a. Unclamped Inductive Test Circuit RD V DS Fig 22b. Unclamped Inductive Waveforms VDS 90% V GS D.U.T. RG + - V DD V10V GS 10% VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % td(on) Fig 23a. Switching Time Test Circuit tr t d(off) Fig 23b. Switching Time Waveforms Id Current Regulator Same Type as D.U.T. Vds Vgs 50KΩ 12V tf .2μF .3μF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Fig 24a. Gate Charge Test Circuit 8 www.irf.com © 2014 International Rectifier Qgs1 Qgs2 Qgd Qgodr Fig 24b. Gate Charge Waveform Submit Datasheet Feedback November 6, 2014 IRFS/SL7430PbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS S E MBL ED ON WW 02, 2000 IN T HE AS S EMB LY LINE "L" INT ERNAT IONAL RECT IF IER L OGO AS S EMBL Y LOT CODE PART NUMB ER F 530S DAT E CODE YEAR 0 = 2000 WE EK 02 LINE L OR INT ERNAT IONAL RE CT IF IER L OGO AS S EMBL Y LOT CODE PART NUMBE R F 530S DAT E CODE P = DE S IGNAT ES L EAD - F REE PRODUCT (OPT IONAL) YEAR 0 = 2000 WE EK 02 A = AS S EMB L Y S IT E CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFS/SL7430PbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMP L E : T H IS IS AN IR L 3103L L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C OR INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R DAT E CODE P = DE S IGNAT E S L E AD-F R E E P R ODU CT (OP T IONAL ) YE AR 7 = 1997 WE E K 19 A = AS S E MB L Y S IT E CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFS/SL7430PbF D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 23.90 (.941) 15.42 (.609) 15.22 (.601) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFS/SL7430PbF Qualification information† Qualification level Industrial †† (per JEDEC JESD47F guidelines) D2Pak MS L 1 †† (per JE DE C J-S T D-020D ) TO-262 Not applicable Yes Moisture Sensitivity Level RoHS compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date Comment • Updated EAS (L =1mH) = 1452mJ on page 2 11/6/2014 • Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50Ω, IAS = 54A, VGS =10V”. on page 2 • Updated package outline on page 9 & 10 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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