IRFU3303

PD - 9.1642A IRFR/U3303 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D -P a k T O -2 52 A A I-P a k TO -2 5 1 A A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 33… 21… 120 57 0.45 ± 20 95 18 5.7 5.0 -55 to + 150 A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient Typ. Max. Units ––– ––– ––– 2.2 50 110 °C/W 8/25/97 IRFR/U3303 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Q gs Q gd t d(on) tr t d(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 30 ––– ––– 2.0 9.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.032 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 11 99 16 28 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance ––– 4.5 LS Internal Source Inductance ––– 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 750 400 140 V(BR)DSS ∆V(BR)DSS/∆TJ I GSS Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.031 Ω VGS = 10V, ID = 18A „ 4.0 V VDS = VGS, I D = 250µA ––– S VDS = 25V, ID = 18A 25 VDS = 30V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 150°C 100 V GS = 20V nA -100 VGS = -20V 29 ID = 18A 7.3 nC VDS = 24V 13 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 15V ––– I D = 18A ns ––– RG = 13Ω ––– RD = 0.8Ω, See Fig. 10 „ Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact† ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr t on Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 33… showing the A G integral reverse ––– ––– 120 p-n junction diode. S ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V „ ––– 53 80 ns TJ = 25°C, IF = 18A ––– 94 140 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: „ Pulse width ≤ 300µs; duty cycle ≤ 2%.  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 590µH … Caculated continuous current based on maximum allowable junction RG = 25Ω, IAS = 18A. (See Figure 12) temperature; Package limitation current = 20A. ƒ ISD ≤ 18A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, † This is applied for I-PAK, LS of D-PAK is measured between TJ ≤ 150°C lead and center of die contact ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 IRFR/U3303 I D , Drain-to-Source Current (A) TOP 100 BOTTOM 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP I D , Drain-to-Source Current (A) 1000 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 10 1 4.5V 0.1 10 20µs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 4.5V 1 0.1 100 1 20µs PULSE WIDTH TJ = 150 °C 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 TJ = 150 ° C 10 TJ = 25 ° C 1 V DS = 15V 25V 20µs PULSE WIDTH 0.1 4 5 6 7 8 9 10 ID = 30A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFR/U3303 VGS Ciss Crss Coss 1200 = 0V, f = 1MHz = Cgs + Cgd , Cds SHORTED = Cgd = Cds + Cgd C, Capacitance (pF) 1000 Ciss 800 Coss 600 400 Crss 200 20 VGS, Gate-to-Source Voltage (V) 1400 10 VDS = 24V VDS = 15V 16 12 8 4 0 1 ID = 18A FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 VDS , Drain-to-Source Voltage (V) 10 15 20 25 30 Q G, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ISD , Reverse Drain Current (A) 5 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 25 ° C I D , Drain Current (A) 100 TJ = 150 ° C 10 1 0.1 0.0 10us 100 100us 10 1ms TC = 25 °C TJ = 150 °C Single Pulse V GS = 0 V 1.0 2.0 3.0 4.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 5.0 1 1 10ms 10 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 100 IRFR/U3303 35 LIMITED BY PACKAGE VGS 30 ID , Drain Current (A) RD VDS D.U.T. RG + 25 - VDD 10V 20 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 15 Fig 10a. Switching Time Test Circuit 10 VDS 5 90% 0 25 50 75 100 T C , Case Temperature 125 150 ( ° C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 0.00001 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 0.1 IRFR/U3303 200 D.U.T. RG + V - DD IAS 10 V tp 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS , Single Pulse Avalanche Energy (mJ) L VDS ID 8.0A 11A 18A TOP BOTTOM 150 100 50 0 25 50 75 100 125 Starting T J, Junction Temperature tp 150 ( °C) VDD Fig 12c. Maximum Avalanche Energy Vs. Drain Current VDS IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit IRFR/U3303 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * V GS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS ISD * IRFR/U3303 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) 1.14 (.045) 0.89 (.035) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 10.42 (.410) 9.40 (.370) LEA D AS SIG NME NT S 1 - G AT E 3 0.51 (.020) MIN. -B 1.52 (.060) 1.15 (.045) 4 - DRA IN 3X 2X 1.14 (.045) 0.76 (.030) 2 - DRA IN 3 - S OUR CE 0.89 (.035) 0.64 (.025) 0.25 ( .010) 0.58 (.023) 0.46 (.018) M A M B NOT ES: 2.28 (.090) 1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS ION : INCH. 3 CO NFO RMS T O JEDE C O UTLINE TO -252AA . 4.57 (.180) 4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP , SO LDER DIP MA X. +0.16 (.006). Part Marking Information TO-252AA (D-Pak) E X A M P LE : T H IS IS A N IR F R 120 W IT H A S S E MB L Y LOT C OD E 9U 1P IN T E R N A T IO N A L R E CT IF IE R LO G O A IR F R 12 0 9U A S S E MB L Y L O T C OD E F IR S T P O R T ION OF P A R T N U MB E R 1P S E C O N D P O R T ION OF PART NUMBER IRFR/U3303 Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) 2.38 (.094) 2.19 (.086) -A- 0.58 (.023) 0.46 (.018) 1.27 ( .050) 0.88 ( .035) 5.46 (.215) 5.21 (.205) LEAD AS SIG NMENT S 4 6.45 (.245) 5.68 (.224) 6.22 ( .245) 5.97 ( .235) 1.52 ( .060) 1.15 ( .045) 1 2 1 - G AT E 2 - DRA IN 3 - S OURCE 4 - DRA IN 3 -B - NOT ES : 1 DIME NSIO NING & T OLE RANCING P ER A NSI Y14.5M, 1982. 2.28 (.090) 1.91 (.075) 2 CO NTRO LLIN G DIMENS ION : INCH. 3 CO NFO RMS TO J EDE C O UT LINE TO -252AA . 9.65 (.380) 8.89 (.350) 4 DIME NSIO NS SHOW N A RE BEF O RE SO LDER DIP , SO LDER DIP MA X. +0.16 (.006). 3X 1.14 (.045) 0.76 (.030) 2.28 (.090) 3X 1.14 (.045) 0.89 (.035) 0.89 (.035) 0.64 (.025) 0.25 (.010) 2X M A M B 0.58 (.023) 0.46 (.018) Part Marking Information TO-251AA (I-Pak) E X A M P LE : TH IS IS A N IR F U1 20 W IT H A S S E M B LY LO T C O D E 9U 1P IN TE RN A T IO N A L R E C T IF IE R LO GO A S S E M B LY LO T C O D E IR F U 120 9U 1 P F IR S T P O RT IO N O F P A R T N UM B E R S E C O N D P O R T ION OF PART NUMBER IRFR/U3303 Tape & Reel Information TO-252AA TR TRR 16 .3 ( .64 1 ) 15 .7 ( .61 9 ) 1 2 .1 ( .4 76 ) 1 1 .9 ( .4 69 ) F E E D D IR E C TIO N TRL 1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C TIO N N O T ES : 1 . C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ). 3 . O U T L IN E C O N FO R M S TO E IA -48 1 & E IA -5 4 1 . 1 3 IN C H 16 m m NO T ES : 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/