IRGP6690D-EPBF

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G G VCE(ON) typ. = 1.65V @ IC = 75A E n-channel Applications • Welding • H Bridge Converters C E G C Collector Features E Emitter Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications Optimized diode for full bridge hard switch converters Optimized for welding and H bridge converters Improved reliability due to rugged hard switching performance and higher power capability Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Enables short circuit protection scheme Positive VCE (ON) temperature coefficient Excellent current sharing in parallel operation Lead-free, RoHS compliant Environmentally friendly Base part number Package Type IRGP6690DPBF IRGP6690D-EPBF TO-247AC TO-247AD E IRGP6690D-EPbF TO-247AD IRGP6690DPbF TO-247AC G Gate C Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP6690DPBF IRGP6690D-EPBF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IFRM @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  Diode Repetitive Peak Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 600 140 90 225 300 45 300 ±20 483 241 -40 to +175 Units V A V W C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal Resistance RθJC (IGBT) RθJC (Diode) RθCS RθJA 1 Parameter Thermal Resistance Junction-to-Case-(each IGBT)  Thermal Resistance Junction-to-Case-(each Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com © 2014 International Rectifier Min. ––– ––– ––– ––– Submit Datasheet Feedback Typ. ––– ––– 0.24 ––– Max. 0.31 2.10 ––– 40 Units °C/W November 14, 2014 IRGP6690DPbF/IRGP6690D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ΔV(BR)CES/ΔTJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 600 — Typ. — 0.55 — 1.65 — 2.05 — 2.10 VGE(th) Gate Threshold Voltage 4.0 — Threshold Voltage Temperature Coeff. — -19 ΔVGE(th)/ΔTJ gfe Forward Transconductance — 50 — 1.5 ICES Collector-to-Emitter Leakage Current — 1.4 Gate-to-Emitter Leakage Current — — IGES — 2.3 Diode Forward Voltage Drop VFM — 1.5 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Max. — — Units Conditions V VGE = 0V, IC = 100µA  V/°C VGE = 0V, IC = 3mA (25°C-175°C) 1.95 IC = 75A, VGE = 15V, TJ = 25°C V — IC = 75A, VGE = 15V, TJ = 150°C — IC = 75A, VGE = 15V, TJ = 175°C 6.5 V VCE = VGE, IC = 2.1mA — mV/°C VCE = VGE, IC = 2.1mA (25°C-175°C) — S VCE = 50V, IC = 75A, PW = 20µs 100 µA VGE = 0V, VCE = 600V — mA VGE = 0V, VCE = 600V, TJ = 175°C ±200 nA VGE = ±20V 3.3 V IF = 18A — IF = 18A, TJ = 175°C VCE(on) Collector-to-Emitter Saturation Voltage Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Parameter Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector Charge Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 5 — — µs Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 210 90 26 — — — µJ ns A Min. — — — — — — — — — — — Typ. 140 40 60 2.4 2.2 4.6 85 86 222 53 3.1 Max — — — — — — — — — — — Units — — — — — — — — — 2.8 5.9 67 92 227 78 4720 270 140 — — — — — — — — — mJ nC mJ ns ns pF FULL SQUARE Conditions IC = 75A VGE = 15V VCC = 400V IC = 75A, VCC = 400V, VGE=15V RG = 10Ω, L = 400µH, TJ = 25°C Energy losses include tail & diode reverse recovery  IC = 75A, VCC = 400V, VGE=15V RG = 10Ω, L = 400µH, TJ = 175°C Energy losses include tail & diode reverse recovery  VGE = 0V VCC = 30V f = 1.0MHz TJ = 175°C, IC = 300A VCC = 480V, Vp ≤ 600V VGE = +20V to 0V TJ = 150°C,VCC = 400V, Vp ≤ 600V VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 18A VGE = 15V, Rg = 10Ω Notes:       VCC = 80% (VCES), VGE = 20V, L = 400µH, RG = 10Ω. Rθ is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. fsw =40KHz, refer to figure 26. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6690DPbF/IRGP6690D-EPbF 140 For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 241W Load Current ( A ) 120 100 80 Square Wave: VCC 60 I 40 Diode as specified 20 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 500 140 120 400 80 300 Ptot (W) IC (A) 100 60 200 40 100 20 0 0 25 50 75 100 125 150 175 25 TC (°C) 50 75 100 125 150 175 TC (°C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 1000 10µsec 100 100µsec 10 100 IC (A) IC (A) 1msec DC 10 1 Tc = 25°C Tj = 175°C Single Pulse 1 0.1 1 10 100 VCE (V) Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V 3 www.irf.com © 2014 International Rectifier 10 100 1000 V CE (V) Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V Submit Datasheet Feedback November 14, 2014 IRGP6690DPbF/IRGP6690D-EPbF 300 300 250 250 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V 150 150 100 100 50 50 0 0 0 2 4 6 8 10 0 2 4 10 Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 300 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V 175°C 25°C -40°C 250 200 IF (A) 200 150 150 100 100 50 50 0 0 0 2 4 6 8 10 0.0 1.0 2.0 V CE (V) 7 6 6 V CE (V) ICE = 37A ICE = 75A 4 4.0 5.0 6.0 7.0 Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics 7 5 3.0 VF (V) Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs V CE (V) 8 V CE (V) 250 ICE = 150A 3 5 ICE = 37A ICE = 75A 4 ICE = 150A 3 2 2 1 1 0 0 5 10 15 20 V GE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4 6 V CE (V) 300 ICE (A) V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V 200 ICE (A) ICE (A) 200 www.irf.com © 2014 International Rectifier 5 10 15 20 V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 25°C Submit Datasheet Feedback November 14, 2014 IRGP6690DPbF/IRGP6690D-EPbF 7 300 6 250 ICE = 150A 200 4 ICE (A) V CE (V) 5 ICE = 37A ICE = 75A 3 TJ = 25°C TJ = 175°C 150 100 2 50 1 0 0 5 10 15 20 2 4 8 10 12 14 16 V GE (V) Fig. 12 - Typical VCE vs. VGE TJ = 175°C Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 1000 14 12 Swiching Time (ns) tdOFF 10 Energy (mJ) 6 V GE (V) EON 8 6 4 EOFF tF 100 tdON tR 2 10 0 0 20 40 60 80 0 100 120 140 160 20 40 60 80 100 120 140 160 IC (A) IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 175°C; L = 400µH; VCE = 400V, RG = 10Ω; VGE = 15V Fig. 15 - Typ. Switching Time vs. IC TJ = 175°C; L = 400µH; VCE = 400V, RG = 10Ω; VGE = 15V 10000 12 10 Swiching Time (ns) EON Energy (mJ) 8 6 EOFF 4 tdOFF 1000 tR 2 100 0 0 20 40 60 80 100 tF tdON 0 10 20 30 40 50 Rg (Ω ) RG ( Ω ) Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; L = 400µH; VCE = 400V, ICE = 75A; VGE = 15V Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; L = 400µH; VCE = 400V, ICE = 75A; VGE = 15V 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6690DPbF/IRGP6690D-EPbF 30 30 RG = 10Ω 25 25 IRR (A) IRR (A) RG = 22Ω 20 RG = 47Ω 15 RG = 100Ω 10 20 15 10 5 5 5 10 15 20 25 30 35 0 40 20 40 60 80 100 IF (A) RG ( Ω) Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C 1800 30 36A 1600 25 QRR (nC) IRR (A) 20 15 10Ω 22Ω 1400 47Ω 1200 18A 1000 100Ω 10 800 5 600 0 200 400 600 800 9.0A 0 1000 200 400 600 800 1000 1200 diF /dt (A/µs) diF /dt (A/µs) Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 18A; TJ = 175°C Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 600 30 300 RG = 10Ω 250 25 RG = 22Ω Isc Tsc 500 Time (µs) 150 RG = 47Ω 20 400 15 300 10 200 Current (A) Energy (µJ) 200 100 RG = 100Ω 50 0 5 5 10 15 20 25 30 35 40 IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C 6 www.irf.com © 2014 International Rectifier 100 9 10 11 12 13 14 15 16 V GE (V) Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C Submit Datasheet Feedback November 14, 2014 IRGP6690DPbF/IRGP6690D-EPbF 16 V GE, Gate-to-Emitter Voltage (V) 10000 Capacitance (pF) Cies 1000 Coes 100 Cres V CES = 400V 14 V CES = 300V 12 10 8 6 4 2 0 10 0 100 200 300 400 0 500 20 40 60 80 100 120 140 Q G, Total Gate Charge (nC) V CE (V) Fig. 25 - Typical Gate Charge vs. VGE ICE = 75A Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 120 D=0.1 Repetitive Peak Current (A) 100 80 D=0.2 60 40 D=0.3 20 0 100 125 150 175 Case Temperature (°C) Fig. 26 - Typical Gate Charge vs. VGE Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 τJ 0.02 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 τC τ2 τ1 τ2 τ3 τ3 τ4 τ4 Ci= τi/Ri Ci= τi/Ri 0.001 1E-005 τi (sec) 0.0059807 0.00001295 0.0714021 0.00014130 0.1411822 0.00407600 0.0913779 0.02072000 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 τC Ri (°C/W) 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6690DPbF/IRGP6690D-EPbF Thermal Response ( Z thJC ) 10 D = 0.50 1 0.20 0.10 τJ 0.05 0.1 0.02 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 τC τ2 τ1 τ2 τ3 τ3 τ4 τ4 Ci= τi/Ri Ci= τi/Ri τC Ri (°C/W) τi (sec) 0.156286 0.000117 0.556864 0.000252 0.866402 0.003387 0.521965 0.030298 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6690DPbF/IRGP6690D-EPbF L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 22K C sense DUT VCC G force DUT 0.0075µF Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 9 www.irf.com © 2014 International Rectifier Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback November 14, 2014 IRGP6690DPbF/IRGP6690D-EPbF 600 120 600 120 tr tf 400 80 400 90% ICE 300 60 40 200 10% VCE 10% ICE 100 ) A ( E IC 80 60 90% ICE 200 40 10%ICE 10% VCE 100 0 -0.6 -0.5 -0.4 -0.3 0 Eon Loss -20 -0.2 -100 -20 -0.6 -0.5 -0.4 -0.3 -0.2 time(µs) time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 20 600 600 500 500 QRR 15 10 tRR 5 VCE 400 0 400 300 300 -5 -10 Vce (V) IF (A) 20 0 Eoff Loss -100 100 300 20 0 TEST CURRENT ICE (A) 500 Peak IRR -15 ICE 200 200 Ice (A) E C V 100 VCE (V) ) (V 500 100 100 -20 -30 -0.2 -0.1 0.0 0.1 time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 10 0 0 -25 www.irf.com © 2014 International Rectifier -100 15.0 -100 -5.0 0.0 5.0 10.0 time (µs) Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 Submit Datasheet Feedback November 14, 2014 IRGP6690DPbF/IRGP6690D-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6690DPbF/IRGP6690D-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6690DPbF/IRGP6690D-EPbF Qualification Information† Industrial Qualification Level (per JEDEC JESD47F) †† Moisture Sensitivity Level TO-247AC N/A TO-247AD N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 11/14/2014 Comments • Added IFM Diode Maximum Forward Current = 300A with the note  on page 1. • Removed note from switching losses test condition on page 2. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 13 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014