IRLR3303TR

PD- 91316F IRLR/U3303 HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR3303) Straight Lead (IRLU3303) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 35A… S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. D -P ak T O -252 A A The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. I-P ak T O -25 1A A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 35 … 25 140 68 0.45 ± 16 130 20 6.8 5.0 -55 to + 175 A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Case-to-Ambient (PCB mount)** Junction-to-Ambient Typ. Max. Units ––– ––– ––– 2.2 50 110 °C/W ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 9/28/98 IRLR/U3303 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Min. Typ. Max. Units Conditions 30 ––– ––– V V GS = 0V, ID = 250µA ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.031 VGS = 10V, ID = 21A „ Ω ––– ––– 0.045 VGS = 4.5V, ID = 17A „ 1.0 ––– ––– V VDS = VGS, ID = 250µA 12 ––– ––– S VDS = 25V, ID = 20A‡ ––– ––– 25 VDS = 30V, VGS = 0V µA ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 16V nA ––– ––– -100 VGS = -16V ––– ––– 26 ID = 20A ––– ––– 8.8 nC VDS = 24V ––– ––– 15 VGS = 4.5V, See Fig. 6 and 13 „‡ ––– 7.4 ––– VDD = 15V ––– 200 ––– ID = 20A ns ––– 14 ––– RG = 6.5Ω, VGS = 4.5V ––– 36 ––– RD = 0.70Ω, See Fig. 10 „‡ Between lead, ––– 4.5 ––– nH 6mm (0.25in.) G from package ––– 7.5 ––– and center of die contact† ––– 870 ––– VGS = 0V ––– 340 ––– pF V DS = 25V ––– 170 ––– ƒ = 1.0MHz, See Fig. 5‡ D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 35 … showing the A G integral reverse ––– ––– 140 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 20A, V GS = 0V „ ––– 72 110 ns TJ = 25°C, IF = 20A ––– 180 280 nC di/dt = 100A/µs „‡ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ VDD = 15V, starting TJ = 25°C, L =470µH RG = 25Ω, I AS = 20A. (See Figure 12) ƒ ISD ≤ 20A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 300µs; duty cycle ≤ 2%. 2 … Caculated continuous current based on maximum allowable junction temperature; Package limitation current = 20A. † This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. ‡ Uses IRL3303 data and test conditions. www.irf.com IRLR/U3303 1000 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOT TOM 2.5V VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 100 TOP ID , D rain-to-S ourc e C urrent (A ) ID , D ra in -to -S o u rc e C u rren t (A ) TO P 10 1 2.5V 2 0µ s P U LS E W ID TH T J = 25 °C 0.1 0.1 1 10 100 10 2 .5V 1 2 0µ s P U LS E W ID TH T J = 1 75 °C 0.1 A 100 0.1 1 V D S , D rain-to-S ource V oltage (V ) Fig 2. Typical Output Characteristics 2.0 R D S (on) , Drain-to-S ource O n Resistance (N orm alized) I D , D rain-to-So urce C urren t (A ) 1000 100 TJ = 2 5 °C TJ = 1 75 °C 10 1 V DS = 1 5V 2 0µ s P U L S E W ID TH 2 3 4 5 6 7 8 9 V G S , G ate -to -So urce Volta ge (V ) Fig 3. Typical Transfer Characteristics www.irf.com A 100 V D S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics 0.1 10 10 A I D = 3 4A 1.5 1.0 0.5 V G S = 10 V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , Junction T em perature (°C ) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLR/U3303 V GS C is s C rs s C iss C o ss C , C apacitance (pF) 1400 = = = = 15 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd V G S , G a te-to-S ou rc e V o ltag e (V ) 1600 V D S = 24 V V D S = 15 V 12 1200 1000 I D = 2 0A C oss 800 600 C rss 400 9 6 3 200 0 1 10 100 FO R TE S T CIR C U IT S E E FIG U R E 1 3 0 A 0 V D S , D rain-to-S ource V oltage (V ) 20 30 A 40 Q G , T otal G ate C harge (nC ) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n) I D , Drain C urrent (A ) I S D , R everse Drain C urrent (A ) 10 100 T J = 17 5°C T J = 25 °C 10 V G S = 0V 1 0.0 0.5 1.0 1.5 2.0 V S D , S ourc e-to-D rain V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage 4 A 2.5 10µ s 100 100 µs 10 1m s 10m s T C = 25 °C T J = 17 5°C S ing le P u lse 1 1 A 10 100 V D S , D rain-to-S ource V oltage (V ) Fig 8. Maximum Safe Operating Area www.irf.com IRLR/U3303 35 RD VDS LIMITED BY PACKAGE VGS 30 D.U.T. I D , Drain Current (A) RG + -VDD 25 4.5V 20 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 15 Fig 10a. Switching Time Test Circuit 10 VDS 5 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR/U3303 1 5V L VDS D .U .T RG IA S 20V D R IV E R + V - DD 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit A E A S , S ingle P ulse A valanche E nergy (m J) 300 TO P 250 B O TTO M ID 8.3 A 14 A 2 0A 200 150 100 50 0 V D D = 15 V 25 50 A 75 100 125 150 175 S tarting T J , J unc tion T em perature (°C ) V (B R )D SS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 10 V QGS + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. QGD IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRLR/U3303 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRLR/U3303 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) 1 2 1 - GATE 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 3X 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) 0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 ) 0 .2 5 ( .0 1 0 ) 2 - D R A IN 0 .5 1 (.0 2 0 ) M IN . -B - 2X L E A D A S S IG N M E N T S 3 3 - S OU R CE 4 - D R A IN 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) M A M B N O TE S : 2 .2 8 ( .0 9 0 ) 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 4 .5 7 ( .1 8 0 ) 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) . Part Marking Information TO-252AA (D-PARK) EXAM PLE : TH IS IS AN IR FR 120 W ITH ASSEM BLY LO T C OD E 9U 1P IN TER N ATIO N AL RE CTIFIE R LO G O ASSEM BLY L O T C OD E 8 A IR FR 120 9U 1P FIR ST PO R TIO N OF PAR T N U MBER SEC O ND PO R TIO N O F PAR T NU M BER www.irf.com IRLR/U3303 Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) -A - 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 1 .2 7 ( .0 5 0 ) 0 .8 8 ( .0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) L E A D A S S IG N M E N T S 4 1 - GATE 2 - D R A IN 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 1 2 3 -B 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 3X 3 - SOURCE 4 - D R A IN 6 .2 2 ( .2 4 5 ) 5 .9 7 ( .2 3 5 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 2 .28 (.0 9 0 ) 3X 9 .6 5 ( .3 8 0 ) 8 .8 9 ( .3 5 0 ) N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R MS TO J E D E C O U T L IN E TO -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ). 0 .8 9 (.0 35 ) 0 .6 4 (.0 25 ) 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) 0 .2 5 (.0 1 0 ) M A M B 2X 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) Part Marking Information TO-251AA (I-PARK) EXAM PLE : TH IS IS AN IR FU 12 0 W ITH ASSEM BLY LO T C O D E 9U 1 P IN TE RN ATION AL R EC TIFIER LO GO AS SEMBL Y LO T C O D E www.irf.com IR FU 12 0 9 U 1P FIR ST PO RTION O F PAR T N U M BER SEC O N D PO R TIO N O F PAR T N U MB ER 9 IRLR/U3303 Tape & Reel Information TO-252AA Dimensions are shown in millimeters (inches) TR TRR 1 6.3 ( .641 ) 1 5.7 ( .619 ) 12 .1 ( .4 76 ) 11 .9 ( .4 69 ) F E E D D IR E C T IO N TRL 16 .3 ( .641 ) 15 .7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) F E E D D IR E C T IO N NO T ES : 1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 13 IN C H 16 m m NOTES : 1. O U T LIN E C O N F O R M S T O E IA -481 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 9/98 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/