PD - 94266
IRLR3714
IRLU3714
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l
l
l
VDSS
RDS(on) max
ID
20V
20mΩ
36A
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR3714
I-Pak
IRLU3714
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC
ID @ TC
I DM
PD @TC
PD @TC
= 25°C
= 70°C
= 25°C
= 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
20
± 20
36
31
140
47
33
0.31
-55 to + 175
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Typ.
Max.
Units
–––
–––
–––
3.2
50
110
°C/W
Notes through
are on page 10
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1
06/15/01
IRLR3714/IRLU3714
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
20
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ. Max. Units
–––
––– V
0.022 ––– V/°C
15
20
mΩ
21
28
–––
3.0
V
–––
20
µA
–––
100
–––
200
nA
–––
-200
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 18A
VGS = 4.5V, ID = 14A
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
6.5
1.8
2.9
7.1
8.7
78
10
4.5
670
470
68
Max. Units
Conditions
–––
S
VDS = 10V, ID = 14A
9.7
ID = 14A
–––
nC VDS = 10V
–––
VGS = 4.5V
–––
VGS = 0V, VDS = 10V
–––
VDD = 10V
–––
ID = 14A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
VDS = 10V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
72
14
mJ
A
Diode Characteristics
Symbol
IS
I SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Q rr
trr
Q rr
Reverse
Reverse
Reverse
Reverse
2
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
––– 36
A
––– 140
–––
–––
–––
–––
–––
–––
––– 1.3
0.88 –––
35
53
34
51
35
53
35
53
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 18A, VGS = 0V
TJ = 125°C, IS = 18A, VGS = 0V
TJ = 25°C, IF = 18A, VR=10V
di/dt = 100A/µs
TJ = 125°C, IF = 18A, VR=10V
di/dt = 100A/µs
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IRLR3714/IRLU3714
10000
1000
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
TOP
1000
100
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
10
1
2.0V
0.1
100
10
2.0V
1
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.01
0.1
1
10
0.1
100
1
100
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
1000.00
I D = 36A
100.00
TJ = 175°C
10.00
VDS = 15V
20µs PULSE WIDTH
1.00
2.0
4.0
6.0
8.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10.0
(Normalized)
2.0
T J = 25°C
RDS(on) , Drain-to-Source On Resistance
ID , Drain-to-Source Current (Α )
10
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
80
TJ , Junction Temperature
100 120 140 160 180
( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLR3714/IRLU3714
15
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
100
Crss
V DS = 16V
V DS = 10V
VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
Ciss
Coss
12
Coss = Cds + Cgd
1000
ID = 14A
10
9
6
3
0
1
10
0
100
4
8
12
16
20
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000.00
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
T J = 175°C
100.00
100
10.00
T J = 25°C
1.00
100µsec
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.10
0.0
1.0
2.0
VSD , Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10msec
1
3.0
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLR3714/IRLU3714
RD
40
V DS
LIMITED BY PACKAGE
I D , Drain Current (A)
VGS
D.U.T.
30
RG
20
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+
-V DD
4.5V
Fig 10a. Switching Time Test Circuit
VDS
10
90%
0
25
50
75
100
125
150
( °C)
TC , Case Temperature
175
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJC)
10
D = 0.50
1
Thermal Response
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
0.1
t1
t2
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t1/ t
2
J = P DM x Z thJC
+T C
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR3714/IRLU3714
150
ID
1 5V
TOP
5.9A
10A
D .U .T
RG
+
V
- DD
IA S
20V
tp
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
E AS , Single Pulse Avalanche Energy (mJ)
VDS
120
D R IV E R
L
BOTTOM
14A
90
60
30
0
25
50
75
100
125
150
175
( °C)
Starting T , Junction
Temperature
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
4.5 V
50KΩ
12V
.2µF
.3µF
QGS
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRLR3714/IRLU3714
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
V DD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRLR3714/IRLU3714
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2 .3 8 (.0 9 4 )
2 .1 9 (.0 8 6 )
6 .7 3 (.2 6 5 )
6 .3 5 (.2 5 0 )
1 .1 4 (.0 4 5 )
0 .8 9 (.0 3 5 )
-A 1 .2 7 (.0 5 0 )
0 .8 8 (.0 3 5 )
5 .4 6 (.2 1 5 )
5 .2 1 (.2 0 5 )
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
4
6 .4 5 (.2 4 5 )
5 .6 8 (.2 2 4 )
6 .2 2 (.2 4 5 )
5 .9 7 (.2 3 5 )
1.0 2 (.0 4 0 )
1.6 4 (.0 2 5 )
1 0 .4 2 (.4 1 0 )
9 .4 0 (.3 7 0 )
1
2
L E A D A S S IG N M E N T S
3
1 - GATE
0 .5 1 (.0 2 0 )
M IN .
-B 1 .5 2 (.0 6 0 )
1 .1 5 (.0 4 5 )
3X
2X
1 .1 4 (.0 4 5 )
0 .7 6 (.0 3 0 )
0 .8 9 (.0 3 5 )
0 .6 4 (.0 2 5 )
0 .2 5 ( .0 1 0 )
2 - D R A IN
3 - S OU R CE
4 - D R A IN
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
M A M B
N O TE S :
2 .2 8 ( .0 9 0 )
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
4 .5 7 ( .1 8 0 )
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) .
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120
WIT H AS S EMBLY
LOT CODE 1234
AS S EMBLED ON WW 16, 1999
IN THE AS S EMBLY LINE "A"
PART NUMBER
INT ERNATIONAL
RECT IFIER
LOGO
12
AS S EMBLY
LOT CODE
8
IRFU120
916A
34
DAT E CODE
YEAR 9 = 1999
WEEK 16
LINE A
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IRLR3714/IRLU3714
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .7 3 (.26 5 )
6 .3 5 (.25 0 )
2 .3 8 (.0 9 4 )
2 .1 9 (.0 8 6 )
-A 1 .2 7 (.0 5 0 )
0 .8 8 (.0 3 5 )
5 .4 6 (.2 1 5 )
5 .2 1 (.2 0 5 )
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
L E A D A S S IG N M E N T S
4
6 .4 5 (.2 4 5 )
5 .6 8 (.2 2 4 )
6 .2 2 (.2 4 5 )
5 .9 7 (.2 3 5 )
1 .5 2 (.0 6 0 )
1 .1 5 (.0 4 5 )
1
2
2.2 8 (.0 9 0)
1.9 1 (.0 7 5)
1 .1 4 (.0 45 )
0 .7 6 (.0 30 )
2 .2 8 (.0 9 0 )
2X
3 - S OUR C E
4 - D R A IN
3
-B -
3X
1 - G A TE
2 - D R A IN
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5 M , 19 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O J E D E C O U TL IN E T O -2 5 2 A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X . + 0 .1 6 (.0 0 6 ).
9 .6 5 (.3 8 0 )
8 .8 9 (.3 5 0 )
3X
1 .1 4 (.0 4 5 )
0 .8 9 (.0 3 5 )
0 .8 9 ( .0 3 5 )
0 .6 4 ( .0 2 5 )
0 .2 5 (.0 1 0 )
M A M B
0 .58 (.0 2 3 )
0 .46 (.0 1 8 )
I-Pak (TO-251AA) Part Marking Information
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9
IRLR3714/IRLU3714
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .47 6 )
11.9 ( .46 9 )
F E E D D IR E C T IO N
TRL
16 .3 ( .641 )
15 .7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FE E D D IR E C T IO N
N O T ES :
1 . C O N T R O LLIN G D IME N S IO N : M ILL IM ET E R .
2 . A LL D IM EN S IO N S A R E SH O W N IN M ILLIM ET E R S ( IN C H E S ).
3 . O U TL IN E C O N FO R MS T O E IA -481 & E IA -54 1.
1 3 IN C H
16 m m
N O TE S :
1. O U TL IN E C O N F O R M S T O E IA -481 .
Notes:
Repetitive rating; pulse width limited by
When mounted on 1" square PCB ( FR-4 or G-10
Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
max. junction temperature.
Starting TJ = 25°C, L = 0.69 mH
RG = 25Ω, IAS = 14A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum
allowable junction temperature; Package limitation
current is 30A
Data and specifications subject to change without notice.
These products have been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/01
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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