IRLU3714PBF

PD - 95554A IRLR3714PbF IRLU3714PbF SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS RDS(on) max ID 20V 20mΩ 36A l D-Pak IRLR3714 I-Pak IRLU3714 Absolute Maximum Ratings Symbol VDS VGS ID @ TC ID @ TC I DM PD @TC PD @TC = 25°C = 70°C = 25°C = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation ƒ Maximum Power Dissipation ƒ Linear Derating Factor Junction and Storage Temperature Range Max. Units 20 ± 20 36 … 31 140 47 33 0.31 -55 to + 175 V V A W W W/°C °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient Junction-to-Ambient (PCB mount) „ Typ. Max. Units ––– ––– ––– 3.2 50 110 °C/W Notes  through … are on page 10 www.irf.com 1 1/11/05 IRLR/U3714PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. Max. Units ––– ––– V 0.022 ––– V/°C 15 20 mΩ 21 28 ––– 3.0 V ––– 20 µA ––– 100 ––– 200 nA ––– -200 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 18A ƒ VGS = 4.5V, ID = 14A ƒ VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 17 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 6.5 1.8 2.9 7.1 8.7 78 10 4.5 670 470 68 Max. Units Conditions ––– S VDS = 10V, ID = 14A 9.7 ID = 14A ––– nC VDS = 10V ––– VGS = 4.5V ––– VGS = 0V, VDS = 10V ––– VDD = 10V ––– ID = 14A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 10V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. Max. Units ––– ––– 72 14 mJ A Diode Characteristics Symbol IS I SM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Q rr trr Q rr Reverse Reverse Reverse Reverse 2 Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– 36… A ––– 140 ––– ––– ––– ––– ––– ––– ––– 1.3 0.88 ––– 35 53 34 51 35 53 35 53 V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 18A, VGS = 0V ƒ TJ = 125°C, IS = 18A, VGS = 0V ƒ TJ = 25°C, IF = 18A, VR=10V di/dt = 100A/µs ƒ TJ = 125°C, IF = 18A, VR=10V di/dt = 100A/µs ƒ www.irf.com IRLR/U3714PbF 10000 1000 VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.2V BOTTOM 2.0V VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.2V BOTTOM 2.0V TOP 1000 100 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 1 2.0V 0.1 100 10 2.0V 1 20µs PULSE WIDTH Tj = 175°C 20µs PULSE WIDTH Tj = 25°C 0.1 0.01 0.1 1 10 0.1 100 1 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 1000.00 I D = 36A 100.00 T J = 175°C 10.00 VDS = 15V 20µs PULSE WIDTH 1.00 2.0 4.0 6.0 8.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10.0 (Normalized) 2.0 T J = 25°C RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (Α) 10 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 TJ , Junction Temperature 100 120 140 160 180 ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLR/U3714PbF 15 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd ID = 14A VDS = 16V VDS = 10V 12 VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) Coss = Cds + Cgd 1000 Ciss Coss 100 Crss 10 9 6 3 0 1 10 0 100 4 8 12 16 20 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.00 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) T J = 175°C 100.00 100 10.00 T J = 25°C 1.00 100µsec 10 1msec Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.10 0.0 1.0 2.0 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10msec 1 3.0 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLR/U3714PbF 40 RD V DS LIMITED BY PACKAGE I D , Drain Current (A) V GS D.U.T. 30 RG 20 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % + -V DD 4.5V Fig 10a. Switching Time Test Circuit VDS 10 90% 0 25 50 75 100 TC , Case Temperature 125 150 ( °C) 175 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJC) 10 D = 0.50 1 Thermal Response 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.1 t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC +TC 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR/U3714PbF 150 ID 15V D.U.T RG + V - DD IAS 20V tp A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp E AS , Single Pulse Avalanche Energy (mJ) VDS 120 DRIVER L TOP 5.9A BOTTOM 10A 14A 90 60 30 0 25 50 75 100 125 150 175 ( °C) Starting T , Junction Temperature J Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 4.5 V 50KΩ 12V .2µF .3µF QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRLR/U3714PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D.U.T ƒ + ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - V DD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * ISD VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRLR/U3714PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information E XAMPLE: T HIS IS AN IRFR120 WIT H AS S E MBLY LOT CODE 1234 AS S EMBL ED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" PART NUMBE R INTE RNAT IONAL RE CT IF IER LOGO Note: "P" in ass embly line pos ition indicates "L ead-F ree" IRF U120 12 916A 34 AS S EMB LY LOT CODE DAT E CODE YEAR 9 = 1999 WEE K 16 LINE A OR PART NUMB ER INT ERNAT IONAL RE CTIF IER LOGO IRF U120 12 AS S E MB LY LOT CODE 8 34 DAT E CODE P = DE S IGNAT ES L EAD-FREE PRODUCT (OPT IONAL) YE AR 9 = 1999 WEE K 16 A = AS S E MB LY S ITE CODE www.irf.com IRLR/U3714PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRF U120 WITH ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 1999 IN THE ASSEMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRFU120 919A 56 78 ASSEMBLY LOT CODE Note: "P" in as s embly line pos ition indicates "Lead-Free" DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR PART NUMBE R INT ERNAT IONAL RECTIF IER LOGO IRFU120 56 AS SEMBLY LOT CODE www.irf.com 78 DATE CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPTIONAL) YEAR 9 = 1999 WE EK 19 A = ASS EMBLY SIT E CODE 9 IRLR/U3714PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by „ When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. max. junction temperature. ‚ Starting TJ = 25°C, L = 0.69 mH RG = 25Ω, IAS = 14A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. … Calculated continuous current based on maximum allowable junction temperature; Package limitation current is 30A Data and specifications subject to change without notice. These products have been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/05 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/