PD - 94177
SMPS MOSFET
IRLR3715
IRLU3715
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
VDSS
RDS(on) max
ID
20V
14mΩ
54A
Benefits
l
l
l
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR3715
I-Pak
IRLU3715
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
20
± 20
54
38
210
71
3.8
0.48
-55 to + 175
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Typ.
Max.
Units
–––
–––
–––
2.1
110
50
°C/W
Notes through
are on page 10
www.irf.com
1
06/28/01
IRLR/U3715
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.022
11
15
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
14
VGS = 10V, ID = 26A
mΩ
20
VGS = 4.5V, ID = 21A
3.0
V
VDS = VGS, ID = 250µA
20
VDS = 16V, VGS = 0V
µA
100
VDS = 16V, VGS = 0V, TJ = 125°C
200
VGS = 16V
nA
-200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
26
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
11
3.8
4.4
11
6.4
73
12
5.1
1060
700
120
Max. Units
Conditions
–––
S
VDS = 10V, ID = 21A
17
ID = 21A
–––
nC
VDS = 10V
–––
VGS = 4.5V
17
VGS = 0V, VDS = 10V
–––
VDD = 10V
–––
ID = 21A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
VDS = 10V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
110
21
mJ
A
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
54
–––
–––
210
–––
–––
–––
–––
–––
–––
0.9
0.8
37
28
38
30
1.3
–––
56
42
57
45
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 21A, VGS = 0V
TJ = 125°C, IS = 21A, VGS = 0V
TJ = 25°C, IF = 21A, VR=20V
di/dt = 100A/µs
TJ = 125°C, IF = 21A, VR=20V
di/dt = 100A/µs
www.irf.com
IRLR/U3715
1000
1000
VGS
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
100
100
10
2.5V
1
20µs PULSE WIDTH
T = 25 C
°
J
0.1
0.1
1
10
100
TJ = 175 ° C
V DS = 15V
20µs PULSE WIDTH
5.0
6.0
7.0
Fig 3. Typical Transfer Characteristics
www.irf.com
8.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
4.0
1
10
100
Fig 2. Typical Output Characteristics
2.5
VGS , Gate-to-Source Voltage (V)
°
J
VDS , Drain-to-Source Voltage (V)
1000
3.0
20µs PULSE WIDTH
T = 175 C
1
0.1
Fig 1. Typical Output Characteristics
100
2.5V
10
VDS , Drain-to-Source Voltage (V)
10
2.0
VGS
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 52A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLR/U3715
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
14
VGS , Gate-to-Source Voltage (V)
10000
10
ID = 21A
12
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
10
0
100
5
10
15
20
25
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
ID , Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
V DS = 16V
V DS = 10V
0
1
TJ = 175 ° C
100
10
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2.4
100µsec
10
1msec
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRLR/U3715
60
VDS
LIMITED BY PACKAGE
VGS
50
RD
D.U.T.
I D , Drain Current (A)
RG
+
-VDD
40
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
10
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.01
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRLR/U3715
D R IV E R
L
VDS
D .U .T
RG
+
- VD D
IA S
2V0GS
V
tp
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
EAS , Single Pulse Avalanche Energy (mJ)
240
1 5V
TOP
200
BOTTOM
ID
8.5A
15A
21A
160
120
80
40
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
4.5 V
50KΩ
12V
.2µF
.3µF
QGS
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRLR/U3715
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
www.irf.com
7
IRLR/U3715
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2 .3 8 (.0 9 4 )
2 .1 9 (.0 8 6 )
6 .7 3 (.2 6 5 )
6 .3 5 (.2 5 0 )
-A 1 .2 7 (.0 5 0 )
0 .8 8 (.0 3 5 )
5 .4 6 (.2 1 5 )
5 .2 1 (.2 0 5 )
1 .1 4 (.0 4 5 )
0 .8 9 (.0 3 5 )
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
4
6 .4 5 (.2 4 5 )
5 .6 8 (.2 2 4 )
6 .2 2 (.2 4 5 )
5 .9 7 (.2 3 5 )
1.0 2 (.0 4 0 )
1.6 4 (.0 2 5 )
1 0 .4 2 (.4 1 0 )
9 .4 0 (.3 7 0 )
1
2
1 - GATE
0 .5 1 (.0 2 0 )
M IN .
-B 1 .5 2 (.0 6 0 )
1 .1 5 (.0 4 5 )
3X
2X
1 .1 4 (.0 4 5 )
0 .7 6 (.0 3 0 )
L E A D A S S IG N M E N T S
3
0 .8 9 (.0 3 5 )
0 .6 4 (.0 2 5 )
0 .2 5 ( .0 1 0 )
2 - D R A IN
3 - S OU R CE
4 - D R A IN
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
M A M B
N O TE S :
2 .2 8 ( .0 9 0 )
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
4 .5 7 ( .1 8 0 )
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) .
D-Pak (TO-252AA) Part Marking Information
8
www.irf.com
IRLR/U3715
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .7 3 (.26 5 )
6 .3 5 (.25 0 )
2 .3 8 (.0 9 4 )
2 .1 9 (.0 8 6 )
-A 1 .2 7 ( .0 5 0 )
0 .8 8 ( .0 3 5 )
5 .4 6 (.2 1 5 )
5 .2 1 (.2 0 5 )
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
4
6 .4 5 (.2 4 5 )
5 .6 8 (.2 2 4 )
6 .2 2 ( .2 4 5 )
5 .9 7 ( .2 3 5 )
1 .5 2 (.0 6 0 )
1 .1 5 (.0 4 5 )
1
2
L E A D A S S IG N M E N T S
1 - GATE
2 - D R A IN
3 - SOURCE
4 - D R A IN
3
-B -
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 .
2.2 8 (.0 9 0)
1.9 1 (.0 7 5)
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R MS TO J E D E C O U T L IN E TO -2 5 2 A A .
9 .6 5 ( .3 8 0 )
8 .8 9 ( .3 5 0 )
4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ).
3X
1 .1 4 (.0 45 )
0 .7 6 (.0 30 )
2 .28 (.0 9 0 )
2X
3X
1 .1 4 ( .0 4 5 )
0 .8 9 ( .0 3 5 )
0 .8 9 (.0 35 )
0 .6 4 (.0 25 )
0 .2 5 (.0 1 0 )
M A M B
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
I-Pak (TO-251AA) Part Marking Information
www.irf.com
9
IRLR/U3715
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
1 6 .3 ( .6 4 1 )
1 5 .7 ( .6 1 9 )
1 2 .1 ( .4 7 6 )
1 1 .9 ( .4 6 9 )
FE E D D IR E C TIO N
TR L
1 6 .3 ( .64 1 )
1 5 .7 ( .61 9 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
FE E D D IR E C T IO N
N O T ES :
1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM ET E R .
2 . AL L D IM EN SIO N S AR E SH O W N IN M IL L IM ET E R S ( IN C H E S ).
3 . O U TL IN E C O N F O R M S T O E IA -4 81 & E IA -54 1 .
1 3 IN C H
16 m m
N O T ES :
1 . O U TL IN E C O N F O R M S T O E IA-4 8 1 .
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.51mH
RG = 25Ω, IAS = 21A,VGS=10V
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 30A.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer
to application note #AN-994
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/01
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
工商网监
湘ICP备2023018690号
