IST015N06NM5AUMA1

IST015N06NM5 MOSFET OptiMOSTM5Power-Transistor,60V sTOLL Features 6, Tab •Optimizedforlowvoltagemotordrivesapplication •Optimizedforbatterypoweredapplications •Enablesautomatedopticalsolderinspection •100%avalanchetested •N-channel •175°Crated •Pb-freeleadplating;RoHScompliant 1 2 3 4 5 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain Pin 6, Tab Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V Gate Pin 5 *1 Source Pin 1-4 *1: Internal body diode RDS(on),max 1.5 mΩ ID 242 A Qoss 81 nC QG(0V...10V) 71 nC Type/OrderingCode Package IST015N06NM5 sTOLL Final Data Sheet 1 Marking RelatedLinks 015N06N5 - Rev.2.0,2022-04-28 OptiMOSTM5Power-Transistor,60V IST015N06NM5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2022-04-28 OptiMOSTM5Power-Transistor,60V IST015N06NM5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 242 171 36 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=40°C/W2) - 968 A TC=25°C - - 380 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 167 3.8 W TC=25°C TA=25°C,RthJA=40°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche energy, single pulse4) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.45 0.9 °C/W - Thermal resistance, junction - ambient, RthJA 6 cm² cooling area2) - - 40 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2022-04-28 OptiMOSTM5Power-Transistor,60V IST015N06NM5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=95µA - 0.5 10 1.0 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.3 1.9 1.5 2.4 mΩ VGS=10V,ID=50A VGS=6V,ID=25A Gate resistance RG - 1.6 - Ω - gfs 70 140 - S |VDS|≥2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current 1) Transconductance Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 5200 - pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 1200 - pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 48 - pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 22.48 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Rise time tr - 63.6 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Turn-off delay time td(off) - 44.6 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Fall time tf - 17.7 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 23 - nC VDD=30V,ID=50A,VGS=0to10V Gate charge at threshold Qg(th) - 14.6 - nC VDD=30V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 12.9 - nC VDD=30V,ID=50A,VGS=0to10V Switching charge Qsw - 21 - nC VDD=30V,ID=50A,VGS=0to10V Gate charge total Qg - 71 89 nC VDD=30V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 4.3 - V VDD=30V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 63 - nC VDS=0.1V,VGS=0to10V Output charge Qoss - 81 - nC VDS=30V,VGS=0V 1) 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2022-04-28 OptiMOSTM5Power-Transistor,60V IST015N06NM5 Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 121 A TC=25°C - 968 A TC=25°C - 0.84 1.2 V VGS=0V,IF=50A,Tj=25°C trr - 65.4 - ns VR=30V,IF=50A,diF/dt=100A/µs Qrr - 101.1 - nC VR=30V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.0,2022-04-28 OptiMOSTM5Power-Transistor,60V IST015N06NM5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 175 250 225 150 200 175 150 100 ID[A] Ptot[W] 125 75 125 100 75 50 50 25 25 0 0 25 50 75 100 125 150 0 175 0 25 50 TC[°C] 75 100 125 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 175 101 10 1 µs 103 100 10 µs 102 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 100 µs ZthJC[K/W] ID[A] 150 TC[°C] 1 ms 101 10 ms 10-1 100 DC 10-2 10-1 10-2 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2022-04-28 OptiMOSTM5Power-Transistor,60V IST015N06NM5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1000 4.0 10 V 900 8V 7V 3.5 800 3.0 5V 700 2.5 RDS(on)[mΩ] ID[A] 600 500 6V 400 6V 2.0 7V 1.5 8V 300 10 V 1.0 200 0 0.5 5V 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 5.0 0 50 100 VDS[V] 150 ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 1000 5.0 900 4.5 800 4.0 700 RDS(on)[mΩ] ID[A] 500 400 175 °C 3.0 2.0 1.5 200 1.0 100 0.5 1 2 3 4 5 6 7 VGS[V] 0.0 25 °C 4 8 12 16 20 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 175 °C 2.5 300 0 250 3.5 25 °C 600 0 200 ID[A] RDS(on)=f(VGS),ID=50A;parameter:Tj 7 Rev.2.0,2022-04-28 OptiMOSTM5Power-Transistor,60V IST015N06NM5 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 3.5 3.0 1.6 950 µA 2.5 1.4 VGS(th)[V] RDS(on)(normalizedto25°C) 1.8 1.2 2.0 95 µA 1.5 1.0 1.0 0.8 0.5 0.6 0.4 -75 -50 -25 0 25 50 75 0.0 -75 100 125 150 175 200 -50 -25 0 Tj[°C] 25 50 75 100 125 150 175 200 Tj[°C] RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th)=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 10 20 30 40 50 60 100 0.4 0.6 VDS[V] 1.0 1.2 1.4 1.6 1.8 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.8 IF=f(VSD);parameter:Tj 8 Rev.2.0,2022-04-28 OptiMOSTM5Power-Transistor,60V IST015N06NM5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 12 V 30 V 48 V 8 25 °C 6 150 °C VGS[V] IAV[A] 100 °C 101 4 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 60 70 80 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 65 64 63 VBR(DSS)[V] 62 61 60 59 58 57 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2022-04-28 OptiMOSTM5Power-Transistor,60V IST015N06NM5 5PackageOutlines PACKAGE - GROUP NUMBER: PG-HSOF-5-U01 REVISION: 02 DATE: 06.05.2021 MILLIMETERS MIN. MAX. 2.20 2.40 0.40 0.60 0.70 0.90 0.42 0.50 6.80 7.20 6.80 7.00 1.10 1.30 1.55 1.75 6.56 5.96 5.60 6.50 6.90 7.80 8.20 0.60 0.80 0.50 0.70 2.43 2.30 5.20 2.57 2.50 1.60 1.30 1.05 1.25 0.80 1.00 0.13 0.33 1.40 1.60 0.00 0.10 8.50° 11.50° DIMENSIONS A A1 b b1 D D1 D2 D3 D4 D5 D6 E E1 E2 E3 E4 E5 E6 E7 E8 e e1 L L1 L2 P Q W Figure1OutlinesTOLL,dimensionsinmm Final Data Sheet 10 Rev.2.0,2022-04-28 OptiMOSTM5Power-Transistor,60V IST015N06NM5 RevisionHistory IST015N06NM5 Revision:2022-04-28,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2022-04-28 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2022-04-28