MMBTA06LT1

MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1 VCEO Collector −Base Voltage VCBO Collector Current − Continuous Unit 1 BASE Vdc 2 EMITTER 60 80 MMBTA05LT1 MMBTA06LT1 Emitter −Base Voltage Value Vdc 60 80 3 VEBO 4.0 Vdc IC 500 mAdc 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. SOT−23 CASE 318 STYLE 6 MARKING DIAGRAMS 1H M G G 1GM M G G MMBTA05LT1 MMBTA06LT1 1H, 1GM = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 June, 2005 − Rev. 3 1 Publication Order Number: MMBTA05LT1/D MMBTA05LT1, MMBTA06LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit 60 80 − − V(BR)EBO 4.0 − Vdc ICES − 0.1 mAdc − − 0.1 0.1 100 100 − − OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Vdc MMBTA05 MMBTA06 Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) mAdc ICBO MMBTA05 MMBTA06 ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE − Collector −Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) − 0.25 Vdc Base −Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) VBE(on) − 1.2 Vdc fT 100 − MHz SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 4) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN−ON TIME −1.0 V 5.0 ms 100 VCC +VBB +40 V +40 V 100 RL OUTPUT +10 V Vin 0 TURN−OFF TIME VCC tr = 3.0 ns OUTPUT Vin RB * CS t 6.0 pF 5.0 mF RL RB * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 300 80 40 C, CAPACITANCE (pF) 200 100 70 50 Cibo 20 10 8.0 Cobo 6.0 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 4.0 200 1.0 2.0 5.0 10 20 Figure 3. Capacitance 50 100 400 TJ = 125°C VCE = 1.0 V ts 100 70 50 tf VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 5.0 7.0 10 tr 200 25°C −55°C 100 80 60 td @ VBE(off) = 0.5 V 40 20 30 50 70 100 200 300 500 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Switching Time Figure 5. DC Current Gain 1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) 10 0.5 Figure 2. Current−Gain — Bandwidth Product 200 20 0.2 VR, REVERSE VOLTAGE (VOLTS) 300 30 0.1 IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 t, TIME (ns) TJ = 25°C 60 VCE = 2.0 V TJ = 25°C h FE , DC CURRENT GAIN f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) MMBTA05LT1, MMBTA06LT1 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) Figure 6. “ON” Voltages http://onsemi.com 3 200 500 200 300 500 1.0 −0.8 R qVB , TEMPERATURE COEFFICIENT (mV/° C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) MMBTA05LT1, MMBTA06LT1 TJ = 25°C 0.8 IC = 250 mA IC = 100 mA IC = 50 mA −1.2 IC = 500 mA 0.6 −1.6 0.2 0 RqVB for VBE −2.0 0.4 IC = 10 mA 0.05 0.1 −2.4 0.2 0.5 1.0 2.0 5.0 10 20 −2.8 0.5 50 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Region Figure 8. Base−Emitter Temperature Coefficient 500 ORDERING INFORMATION Package Shipping † SOT−23 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel SOT−23 10,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel SOT−23 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel SOT−23 10,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel Device MMBTA05LT1 MMBTA05LT1G MMBTA05LT3 MMBTA05LT3G MMBTA06LT1 MMBTA06LT1G MMBTA06LT3 MMBTA06LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MMBTA05LT1, MMBTA06LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D 3 1 E HE 2 DIM A A1 b c D E e L HE e A b A1 C L MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.54 0.69 2.40 2.64 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.029 0.104 MMBTA05LT1, MMBTA06LT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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