PXAC261202FCV1XWSA1

PXAC261202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261202FC is a 120-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 220 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 16 • Broadband internal matching • CW performance in a Doherty configuration, 2555 MHz, 28 V - Output power at P1dB = 80 W - Gain = 13.6 dB - Efficiency = 48% • Single-carrier WCDMA performance in a Doherty configuration, 2555 MHz, 28 V, 8 dB PAR - Output power 28 W - Gain = 14.3 dB - Efficiency = 44.5% - ACPR –30 dBc @ 5 MHz • Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114) • Low thermal resistance • Pb-free and RoHS compliant 50 45 Gain 14 40 13 35 12 30 11 25 2555 MHz 2585 MHz 2615 MHz 10 9 20 15 Efficiency 8 10 7 c261202fc-gr13 29 33 37 Drain Efficiency (%) 15 Gain (dB) PXAC261202FC Package H-37248-4 41 45 5 49 Output Power (dBm) RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon Doherty test fixture) VDD = 28 V, VGS(peak) = 0.9 V, IDQ = 230 mA, POUT = 28 W average, ƒ1 = 2610 MHz, ƒ2 = 2620 MHz. 3GPP WCDMA signal: 3.84 MHz bandwidth, 8 dB PAR @0.01% CCDF. Characteristic Symbol Min Typ Max Unit Linear Gain Gps 12.5 13.5 — dB Drain Efficiency ηD 41.0 45 — % Intermodulation Distortion IMD — –29.5 –26.0 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 9 Rev. 02, 2014-02-26 PXAC261202FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Gate Leakage Current On-state Resistance Operating Gate Voltage (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.19 — Ω (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.16 — Ω (main) VDS = 28 V, IDQ = 0.23 A VGS 2.1 2.6 3.1 V (peak) VDS = 28 V, IDQ = 0 A VGS 0.4 0.9 1.4 V Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 65 V Gate-source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 100 W CW) RθJC 0.48 °C/W Junction Temperature Ordering Information Type and Version Order Code Package and Description Shipping PXAC 261202FC V1 PXAC261202FCV1XWSA1 H-37248-4, ceramic open-cavity, earless Tray PXAC 261202FC V1 R250 PXAC261202FCV1R250XTMA1 H-37248-4, ceramic open-cavity, earless Tape & Reel, 250 pcs Pinout Diagram (top view) S D1 D2 Main Peak G1 G2 Pin D1 D2 G1 G2 S H-37248-4_pd_10-10-2012 Data Sheet 2 of 9 Description Drain device 1 (main) Drain device 2 (peak) Gate device 1 (main) Gate device 2 (peak) Source (flange) Rev. 02, 2014-02-26 PXAC261202FC -10 50 -20 40 -30 30 20 -40 IMD Low IMD Up -50 10 ACPR -10 50 -20 40 -30 30 20 -40 IMD Low IMD Up -50 -60 33 37 41 45 0 -60 c261202fc-gr5 29 49 33 37 41 45 Output Power (dBm) Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 220 mA, ƒ = 2585 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 220 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 50 -20 40 -30 30 20 -40 IMD Low IMD Up -50 10 ACPR -20 -25 IMD (dBc) -10 -30 2615 IMDL 2555 IMDL 2585 IMDL -35 Efficiency -60 c261202fc-gr6 29 33 37 41 45 2615 IMDU 2555 IMDU 2585 IMDU -40 0 49 c261202fc-gr7 29 Output Power (dBm) Data Sheet 0 49 Output Power (dBm) Drain Efficiency (%) IMD (dBc), ACPR (dBc) Efficiency c261202fc-gr4 29 10 ACPR Efficiency Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 220 mA, ƒ = 2555 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD (dBc), ACPR (dBc) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 220 mA, ƒ = 2615 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Drain Efficiency (%) IMD (dBc), ACPR (dBc) Typical Performance (data taken in Infineon Doherty reference test fixture) 34 39 44 49 Output Power (dBm) 3 of 9 Rev. 02, 2014-02-26 PXAC261202FC Typical Performance (cont.) CW Performance at selected VDD CW Performance VDD = 28 V, IDQ = 220 mA 16 60 15 50 15 50 Gain 40 13 30 12 20 11 2555 MHz 2585 MHz 2615 MHz Efficiency 37 41 45 13 30 12 20 Efficiency c261202fc-gr8 33 49 VDD = 24 V VDD = 28 V VDD = 32 V 10 10 0 c261202fc-gr9 29 53 33 37 41 45 Output Power (dBm) Output Power (dBm) CW Performance at selected VDD CW Performance at selected VDD 49 0 53 IDQ = 220 mA, ƒ = 2585 MHz IDQ = 220 mA, ƒ = 2555 MHz 60 16 60 15 50 15 50 14 40 Gain 13 30 12 20 VDD = 24 V VDD = 28 V VDD = 32 V 11 Efficiency 37 41 45 49 13 30 12 20 VDD = 24 V VDD = 28 V VDD = 32 V 10 10 0 c261202fc-gr11 29 53 Output Power (dBm) Data Sheet 40 Efficiency c261202fc-gr10 33 Gain 14 11 10 10 29 Power Gain (dB) 16 Efficiency (%) Power Gain (dB) 40 11 10 10 29 Gain 14 33 37 41 Efficiency (%) 14 Efficiency (%) 60 Power Gain (dB) 16 Efficiency (%) Gain (dB) IDQ = 220 mA, ƒ = 2615 MHz 45 49 0 53 Output Power (dBm) 4 of 9 Rev. 02, 2014-02-26 PXAC261202FC Typical Performance (cont.) Small Signal CW Performance 15 0 14 -5 13 Gain -10 12 -15 Input Return Loss 11 2500 Input Return Loss (dB) Power Gain (dB) VDD = 28 V, IDQ = 220 mA -20 2750 c261202fc-gr12 2550 2600 2650 2700 Frequency (MHz) See next page for load pull information Data Sheet 5 of 9 Rev. 02, 2014-02-26 PXAC261202FC Load Pull Performance Z Source D1 Z Load S G1 G2 D2 Main side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, IDQ = 250 mA P1dB Class AB Max Output Power Freq [MHz] Zs [Ω] 2490 2590 2690 Zl Max PAE [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] 7.15 – j17.1 3.49 – j6.98 16.5 48.38 68.9 9 – j17.7 3.56 – j6.97 16.7 48.29 67.5 12.8 – j18.2 3.62 – j7.38 16.6 48.23 66.5 51.3 Zl [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] 52 6.98 – j4.51 18.7 46.76 47.4 61.3 51.8 5.66 – j3.59 19 46.5 47.7 61.1 4.89 – j4.12 18.8 46.75 47.3 60.1 Peak side pulsed CW signal: 160 µsec, 10% duty cycle; VGS = 1.3 V, IDQ = 0 mA P1dB Class C Max Output Power Freq [MHz] Zs [Ω] 2490 Max PAE [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] 14.7 – j15.8 1.58 – j6.3 12.80 50.13 103.04 2590 9.9 – j9.9 1.67 – j6.51 13.10 49.89 2690 5.5 – j8.3 2.04 – j7.0 13.10 49.50 Data Sheet Zl [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] 51.60 2.63 – j5.85 13.80 49.45 88.10 59.80 97.50 51.40 3.28 – j5.65 14.20 48.50 70.79 59.70 89.13 52.50 2.97 – j6.11 13.80 48.50 70.79 57.80 6 of 9 Zl Rev. 02, 2014-02-26 PXAC261202FC Reference Circuit, tuned for 2620 – 2690 MHz DUT PXAC261202FC Reference Fixture Part No. LTA/PXAC261202FC V1 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at (www.infineon.com/rfpower) (105) RO4350, .020 RO4350, .020 C101 C108 C212 C202 (61) C206 C210 VDD + C211 R101 C103 RF_IN C102 C106 C107 R103 PXAC261202FC S1 RF_OUT C209 R102 C104 C201 VDD C208 + C105 C207 C204 C203 C205 PXAC261202FC_IN_01_D PXAC261202FC_OUT_01_D c 2 6 12 0 2 fc _ cd _ 1- 2 2- 1 4 Reference circuit assembly diagram (not to scale) Component Information Component Description Suggested Manufacturer P/N C101, C104 Chip capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C102 Chip capacitor, 1 pF ATC ATC800A0R8CT250T C103, C105, C106, C108 Chip capacitor, 10 pF ATC ATC800A100JT250T C107 Chip capacitor, 1 pF ATC ATC800A1R0CT250T R101, R102 Resistor, 10 ohms Panasonic – ECG ERJ-3GEYJ100V R103 Resistor, 50 Ω Anaren C16A50Z4 S1 Directional coupler Anaren X3C25P1-05S Input Output C201, C207, C208, C212 Chip capacitor, ATC ATC800A100JT250T C202, C203, C204, C210 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C205, C206 Capacitor, 220 µF, 35 V Panasonic – ECG EEE-FP1V221AP C209, C211 Chip capacitor, 1 pF ATC ATC800A0R8CT250T Data Sheet 7 of 9 Rev. 02, 2014-02-26 PXAC261202FC Package Outline Specifications Package H-37248-4  >@  >@ ;ƒ; >ƒ;@     > 5  @ ;5 ;“ >“@ )/$1*( >@ &/ ' ' /,' >@ “ >“@ &/ * * ; >@ ; >@ 63+ >@ “ >“@  >@ >@ $ +BSRBB “ >“@ 6 &/  >@ Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005]. 4. Pins: D – drain, S – source, G – gate, V – drain voltage (VDD). 5. Lead thickness: 0.10 +0.076/–0.025 [.004 +.003/–.001]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information tabout products and packaging at the Infineon Internet page (www.infineon.com/rfpower) Data Sheet 8 of 9 Rev. 02, 2014-02-26 PXAC261202FC V1 Revision History Revision Date Data Sheet Page Subjects (major changes since last revision) 01 2013-09-26 Advance All Proposed specification for new product development. 02 2014-02-26 Production All 3 – 5, 6, 7 Data Sheet reflects released product data and specifications. Typical Performance graphs, load pull and reference circuit information added. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2014-02-26 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9 of 9 Rev. 02, 2014-02-26