SIDC09D60F6X1SA4

SIDC09D60F6 Fast switching diode A Features: • 600V Emitter Controlled technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient This chip is used for: • power modules and discrete devices C Applications: • SMPS, resonant applications, drives Chip Type VR IF Die Size Package SIDC09D60F6 600V 30A 3 x 3 mm2 sawn on foil Mechanical Parameters Raster size Area total Anode pad size 3x3 mm2 9 2.518 x 2.518 Thickness 70 µm Wafer size 150 mm Max. possible chips per wafer Passivation frontside Pad metal Backside metal 1612 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, ≤250µm Reject ink dot size Recommended storage environment ∅ 0.65mm; max 1.2mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, IMM PSD, L4304M, Edition 2.2, 03.09.2010 SIDC09D60F6 Maximum Ratings Parameter Symbol Condition Value Repetitive peak reverse voltage VRRM Tvj = 25 °C 600 Unit V Continuous forward current IF Tvj < 150°C 1) Maximum repetitive forward current IFRM Tvj < 150°C 60 Junction temperature range Tvj -40...+175 °C Operating junction temperature Tvj -40...+150 °C Dynamic ruggedness²) Pmax tbd kW I F m a x = 60A, V R m a x = 600V, Tvj ≤ 150°C 1) depending on thermal properties of assembly 2) not subject to production test - verified by design/characterisation A Static Characteristic (tested on wafer), Tvj = 25 °C Parameter Symbol Conditions Reverse leakage current IR V R = 60 0 V Cathode-Anode breakdown Voltage VBR I R =1 .5m A Diode forward voltage VF Value min. typ. max. 27 600 I F =3 0A Unit µA V 1.6 V Further Electrical Characteristics Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Edited by INFINEON Technologies, IMM PSD, L4304M, Edition 2.2, 03.09.2010 SIDC09D60F6 Chip Drawing A A: Anode pad Edited by INFINEON Technologies, IMM PSD, L4304M, Edition 2.2, 03.09.2010 SIDC09D60F6 Description AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date 2.2 Max. possible chips per wafer change to 1612 pcs 03.09.2010 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, IMM PSD, L4304M, Edition 2.2, 03.09.2010