SIGC121T60NR2CX1SA2

SIGC121T60NR2C IGBT Chip in NPT-technology FEATURES: • 600V NPT technology 100µm chip • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE SIGC121T60NR2C 600V ICn 150A This chip is used for: • IGBT Modules C Applications: • drives G Die Size Package 11 x 11 mm2 sawn on foil E Ordering Code Q67041-A4684A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size 11 x 11 mm 2 121 / 102.5 8x 6.2 x 2.55 1.51 x 0.8 Thickness 100 µm Wafer size 150 mm Flat position 90 grd Max.possible chips per wafer 106 Passivation frontside Photoimide Emitter metallization 3200 nm Al Si 1% Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 1200 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,