SPD30N03S2L-07

SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS(on) 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) P- TO252 -3-11 • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPD30N03S2L-07 Package Ordering Code P- TO252 -3-11 Q67042-S4091 Marking 2N03L07 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Value Unit A 30 TC=25°C 30 ID puls 120 EAS 250 Repetitive avalanche energy, limited by Tjmax 2) EAR 13 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 136 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=30 A , V DD=25V, RGS=25Ω kV/µs IS=30A, VDS=24V, di/dt=200A/µs, T jmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2003-05-09 SPD30N03S2L-07 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.7 1.1 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm2 cooling area 3) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID=85µA Zero gate voltage drain current µA IDSS V DS=30V, VGS=0V, Tj=25°C - 0.01 1 V DS=30V, VGS=0V, Tj=125°C - 10 100 IGSS - 1 100 nA RDS(on) - 7.4 9.8 mΩ RDS(on) - 5.3 6.7 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=30A Drain-source on-state resistance V GS=10V, I D=30A 1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 111A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPD30N03S2L-07 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 29 58 - Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, S ID =30A Input capacitance Ciss VGS =0V, VDS =25V, - 1900 2530 pF Output capacitance Coss f=1MHz - 740 990 Reverse transfer capacitance Crss - 180 270 Gate resistance RG - 2.3 - Ω Turn-on delay time td(on) VDD =15V, VGS =10V, - 8 10 ns Rise time tr ID =15A, - 17 26 Turn-off delay time td(off) RG =3.6Ω - 62 77.5 Fall time tf - 47 59 - 6 8 - 18 27 - 51 68 V(plateau) VDD =24V, ID =30A - 3.1 - V IS - - 30 A - - 120 Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =24V, ID =30A VDD =24V, ID =30A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0V, IF=30A - 0.9 1.3 V Reverse recovery time trr V R=15V, I F=lS, - 41 51 ns Reverse recovery charge Qrr diF/dt=100A/µs - 46 58 nC Page 3 2003-05-09 SPD30N03S2L-07 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 4 V parameter: VGS≥ 10 V SPD30N03S2L-07 SPD30N03S2L-07 32 150 W A 120 24 100 ID P tot 110 90 80 20 16 70 60 12 50 40 8 30 20 4 10 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPD30N03S2L-07 10 1 SPD30N03S2L-07 K/W A 0 /I D 10 = 2 R ID DS (on ) 10 Z thJC V DS t = 14.0µs p 10 -1 10 -2 100 µs D = 0.50 10 0.20 1 ms 1 0.10 0.05 10 single pulse -3 0.02 0.01 10 0 10 -1 10 0 10 1 V 10 2 VDS 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp Page 4 2003-05-09 0 SPD30N03S2L-07 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs parameter: VGS SPD30N03S2L-07 75 A Ω 60 b 2.8 55 c 3.0 50 d 3.2 e 3.4 f 3.6 40 g 3.8 35 h 4.5 i 10.0 f 45 e 30 d 20 2.6 R DS(on) V [V] GS a i h g ID SPD30N03S2L-07 24 Ptot = 136W e f 18 16 14 12 g 10 d 8 25 20 h 6 c 15 i 4 10 b 5 VGS [V] = a 0 0 0.5 1 1.5 2 2.5 3 3.5 d 3.2 2 V 4 e 3.4 f 3.6 g 3.8 h i 4.5 10.0 0 5 0 10 20 30 40 50 VDS A 65 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 90 60 A S 50 70 40 g fs ID 45 35 60 50 30 40 25 20 30 15 20 10 10 5 0 0 0.5 1 1.5 2 2.5 3 V 4 VGS Page 5 0 0 20 40 60 80 100 A 130 ID 2003-05-09 SPD30N03S2L-07 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 30 A, VGS = 10 V parameter: VGS = VDS SPD30N03S2L-07 16 2.5 Ω 1mA 12 V GS(th) R DS(on) V 10 8 1.5 98% 85µA 1 6 typ 4 0.5 2 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 Tj 180 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 4 10 3 SPD30N03S2L-07 A pF Ciss 2 10 1 C IF 10 10 Coss 3 T j = 25 °C typ Crss T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 2 0 10 5 10 15 20 V 30 V DS 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-05-09 SPD30N03S2L-07 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D = 30 A , V DD = 25 V, R GS = 25 Ω parameter: ID = 30 A pulsed 260 SPD30N03S2L-07 16 mJ V 220 12 180 VGS E AS 200 160 10 0,2 VDS max 140 0,8 VDS max 8 120 100 6 80 4 60 40 2 20 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 10 20 30 40 50 60 nC 80 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPD30N03S2L-07 V(BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPD30N03S2L-07 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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