SPI80N03S2L-06

SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS(on) max. SMD version 5.9 mΩ ID 80 A • Logic Level • Low On-Resistance RDS(on) P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N03S2L-06 Package P- TO220 -3-1 Ordering Code Q67042-S4088 Marking SPB80N03S2L-06 P- TO263 -3-2 Q67042-S4089 2N03L06 SPI80N03S2L-06 P- TO262 -3-1 Q67042-S4092 2N03L06 2N03L06 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) Value Unit A ID 80 TC=25°C 80 ID puls 320 EAS 240 Repetitive avalanche energy, limited by Tjmax 2) EAR 15 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 150 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=20A, V DD=25V, RGS=25Ω kV/µs IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2003-05-09 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 0.68 1 - - 62 - - 40 Characteristics Thermal resistance, junction - case RthJC SMD version, device on PCB: RthJA @ min. footprint @ 6 cm2 cooling area 3) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID = 80 µA Zero gate voltage drain current µA IDSS V DS=30V, VGS=0V, Tj=25°C - 0.01 1 V DS=30V, VGS=0V, Tj=125°C - 10 100 - 1 100 Gate-source leakage current IGSS nA V GS=20V, VDS=0V Drain-source on-state resistance RDS(on) mΩ V GS=4.5V, I D=80A - 7 9.5 V GS=4.5V, I D=80A, SMD version - 6.6 9.2 V GS=10V, I D=80A - 5 6.2 V GS=10V, I D=80A, SMD version - 4.6 5.9 Drain-source on-state resistance4) RDS(on) 1Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry I D= 120A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2003-05-09 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 44 88 - Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, S ID =80A Input capacitance Ciss VGS =0V, VDS =25V, - 1900 2530 pF Output capacitance Coss f=1MHz - 740 990 Reverse transfer capacitance Crss - 175 265 Turn-on delay time td(on) VDD =15V, VGS =10V, - 10 15 Rise time tr ID =20A, - 23 35 Turn-off delay time td(off) RG =3.6Ω - 73 109 Fall time tf - 61 91 - 6 8 - 18 27 - 51 68 V(plateau) VDD =24V, ID =80A - 3.1 - V IS - - 80 A - - 320 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =24V, ID =80A VDD =24V, ID =80A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0V, IF=80A - 0.9 1.3 V Reverse recovery time trr V R=15V, I F=lS, - 41 52 ns Reverse recovery charge Qrr diF/dt=100A/µs - 46 58 nC Page 3 2003-05-09 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 4 V parameter: VGS≥ 10 V SPP80N03S2L-06 160 SPP80N03S2L-06 90 A W 70 60 ID P tot 120 100 50 80 40 60 30 40 20 20 10 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPP80N03S2L-06 10 1 SPP80N03S2L-06 K/W A t = 22.0µs p 0 = 2 100 µs 10 -1 10 -2 R ID DS (on ) 10 Z thJC V DS /I D 10 D = 0.50 0.20 1 ms 10 1 10 -3 0.10 0.05 single pulse 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -5 0.02 0.01 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 2003-05-09 0 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs parameter: VGS SPP80N03S2L-06 190 100 Ptot = 150W A mΩ f d c 140 ID a VGS [V] 120 a 3.5 b 4.0 c 4.5 d 5.0 e 6.0 f 10.0 c b 80 R DS(on) e 160 100 70 VGS [V]= a= 3.5 b= 4 c= 4.5 d= 5 e= 6 f= 10 60 50 b 80 40 60 d 30 40 20 a 20 e 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V f 0 5 0 20 40 60 80 100 120 140 160 A 200 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 160 120 S A 100 90 g fs ID 120 100 80 70 80 60 50 60 40 40 30 20 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS Page 5 0 0 20 40 60 80 A 120 ID 2003-05-09 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 80 A, VGS = 10 V parameter: VGS = VDS SPP80N03S2L-06 3 15 mΩ V V GS(th) R DS(on) 12 11 10 9 8 1.5 98% 7 1mA 2 6 83µA typ 5 1 4 3 0.5 2 1 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 Tj 180 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 4 10 3 SPP80N03S2L-06 A pF 10 2 10 1 C IF C iss 10 C oss 3 T j = 25 °C typ C rss T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 2 0 10 5 10 15 20 V 30 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD V DS Page 6 2003-05-09 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D = 20 A, V DD = 25 V, R GS = 25 Ω parameter: ID = 80 A pulsed 260 SPP80N03S2L-06 16 mJ V 220 12 180 VGS E AS 200 160 10 0,2 VDS max 140 0,8 VDS max 8 120 100 6 80 4 60 40 2 20 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 10 20 30 40 50 60 nC 80 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPP80N03S2L-06 V(BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N03S2L-06, BSPB80N03S2L-06 and BSPI80N03S2L-06, for simplicity the device is referred to by the term SPP80N03S2L-06, SPB80N03S2L-06 and SPI80N03S2L-06 throughout this documentation Page 8 2003-05-09