SPN02N60S5
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS
600
V
RDS(on)
3
Ω
ID
0.4
A
SOT-223
• Extreme dv/dt rated
• Ultra low effective capacitances
4
• Improved transconductance
3
2
1
Type
SPN02N60S5
Package
SOT-223
Ordering Code
Q67040-S4207
VPS05163
Marking
02N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TA = 25 °C
0.4
TA = 70 °C
0.3
Pulsed drain current, tp limited by Tjmax
TA = 25 °C
ID puls
2.2
Gate source voltage
VGS
±20
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, T A = 25°C
Ptot
1.8
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C
Rev. 2.2
Page 1
V
2005-02-21
SPN02N60S5
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
20
V/ns
Values
Unit
V DS = 480 V, ID = 1.8 A, Tj = 125 °C
Thermal Characteristics
Parameter
Symbol
min.
typ.
max.
-
30
-
@ min. footprint
-
110
--
@ 6 cm2 cooling area 1)
-
-
70
-
-
260
Thermal resistance, junction - soldering point
RthJS
SMD version, device on PCB:
RthJA
Soldering temperature,
Tsold
K/W
°C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS VGS=0V, ID=1.8A
Values
Unit
min.
typ.
max.
600
-
-
-
700
-
3.5
4.5
5.5
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=80µΑ, VGS=VDS
Zero gate voltage drain current
IDSS
VDS=600V, VGS=0V,
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
Rev. 2.2
µA
Tj=25°C,
-
0.5
1
Tj=150°C
-
-
50
VGS=20V, VDS=0V
-
-
100
Ω
VGS=10V, ID=1.1A,
Tj=25°C
-
2.5
3
Tj=150°C
-
6.8
-
Page 2
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2005-02-21
SPN02N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
-
0.5
-
S
pF
Characteristics
Transconductance
g fs
V DS≥2*I D*RDS(on)max,
ID=0.3A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
250
-
Output capacitance
Coss
f=1MHz
-
110
-
Reverse transfer capacitance
Crss
-
8
-
Turn-on delay time
t d(on)
V DD=350V, V GS=0/10V,
-
30
-
Rise time
tr
ID=0.4A, RG=50Ω
-
15
-
Turn-off delay time
t d(off)
-
110
-
Fall time
tf
-
30
-
-
1.8
-
-
4.5
-
-
7.4
-
-
8
-
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=350V, ID=0.4A
VDD=350V, ID=0.4A,
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=0.4A
V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 2.2
Page 3
2005-02-21
SPN02N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Inverse diode continuous
Symbol
IS
Conditions
TA=25°C
Values
Unit
min.
typ.
max.
-
-
0.4
-
-
2.2
A
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
0.85
1.05
V
Reverse recovery time
trr
VR=350V, IF =IS ,
-
200
-
ns
Reverse recovery charge
Qrr
di F/dt=100A/µs
-
0.7
-
µC
Rev. 2.2
Page 4
2005-02-21
SPN02N60S5
1 Power dissipation
2 Safe operating area
Ptot = f (TA)
ID = f ( V DS )
parameter : D = 0 , T A=25°C
1.9
10 1
SPN02N60S5
W
A
1.6
10 0
1.2
ID
Ptot
1.4
1
10 -1
0.8
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
0.6
10 -2
0.4
0.2
0
0
20
40
60
80
100
°C
120
10 -3 0
10
160
10
1
10
2
TA
3 Transient thermal impedance
4 Typ. output characteristic
ZthJC = f (t p)
ID = f (VDS); Tj=25°C
parameter: D = tp/T
parameter: tp = 10 µs, VGS
2
10
10
V
VDS
4
K/W
A
10 1
9V
ID
Z thJC
3
10 0
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -1
2.5
2
8V
1.5
1
10 -2
7V
0.5
6V
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s
10
1
tp
Rev. 2.2
0
0
4
8
12
16
20
V
28
VDS
Page 5
2005-02-21
3
SPN02N60S5
5 Drain-source on-state resistance
6 Typ. transfer characteristics
RDS(on) = f (Tj)
ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 0.3 A, VGS = 10 V
parameter: tp = 10 µs
17
SPN02N60S5
6
Ω
A
12
ID
RDS(on)
14
4
10
3
8
6
2
98%
4
typ
1
2
0
-60
-20
20
60
100
°C
0
0
180
4
8
V
12
20
VGS
Tj
7 Typ. gate charge
8 Forward characteristics of body diode
VGS = f (QGate )
IF = f (VSD)
parameter: ID = 0.4 A pulsed
parameter: Tj , tp = 10 µs
16
10 1
SPN02N60S5
V
A
0.2 VDS max
0.8 VDS max
10 0
10
IF
VGS
12
SPN02N60S5
8
6
10 -1
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2
0
0
Tj = 150 °C (98%)
2
4
6
8
nC
12
QGate
Rev. 2.2
10 -2
0
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
Page 6
2005-02-21
SPN02N60S5
9 Drain-source breakdown voltage
10 Typ. capacitances
V(BR)DSS = f (Tj)
C = f (VDS)
parameter: V GS=0V, f=1 MHz
720
10 4
SPN02N60S5
pF
680
10 3
660
C
V(BR)DSS
V
Ciss
640
10
2
620
600
Coss
10 1
580
560
540
-60
-20
20
60
100
°C
180
Tj
10 0
0
Crss
10
20
30
40
50
60
70
80
V
100
VDS
Definition of diodes switching characteristics
Rev. 2.2
Page 7
2005-02-21
SPN02N60S5
SOT223
1.6 ±0.1
6.5 ±0.2
0.1 max
+0.2
acc. to
DIN 6784
1
2
3
3.5 ±0.2
4
0.5 min
B
7 ±0.3
3 ±0.1
15˚max
A
0.28 ±0.04
2.3
0.7 ±0.1
4.6
0.25
Rev. 2.2
M
A
0.25
Page 8
M
B
2005-02-21
SPN02N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.2
Page 9
2005-02-21