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BAS70SL

BAS70SL

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    BAS70SL - Schottky Barrier Diodes - Fairchild Semiconductor

  • 数据手册
  • 价格&库存
BAS70SL 数据手册
BAS70SL — Schottky Barrier Diodes December 2007 BAS70SL Schottky Barrier Diodes Features • Low Forward Voltage Drop • Fast switching • Very Small and Thin SMD package • Profile height, 0.43mm max • Footprint, 1.0 x 0.6 mm Connection Diagram 1 2 2 SOD-923 Marking: AC 1 Absolute Maximum Ratings * Symbol VRRM IF(AV) IFSM PD TJ, TSTG TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Average Rectified Forward Current Forward Surge Current ( 8.3mS Single Half Sine-Wave) Power Dissipation Operating Junction & Storage Temperature Range Value 70 70 100 227 -55 to +150 Unit V mA mA mW °C * These ratings are limiting values above which the serviceability of the diode may be impaired. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol RθJA * Minimum land pad. Parameter Thermal Resistance, Junction to Ambient * Value 550 Unit °C/W Electrical Characteristics Symbol VR VF IR trr Cj TA=25°C unless otherwise noted Parameter Breakdown Voltage Forward Voltage Reverse Leakage Reverse Recovery Time Junction Capacitance Test Conditions IR = 100μA IF = 1mA IF = 15mA VR = 50V IF = IR= 10mA, irr= 0.1IR VR = 0, f = 1.0MHz Min. 70 Max. 410 1000 0.2 8.0 3.0 Unit V mV mV μA nS pF © 2007 Fairchild Semiconductor Corporation BAS70SL Rev. 1.0.0 1 www.fairchildsemi.com BAS70SL — Schottky Barrier Diodes Typical Performance Characteristics Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current 100000 100 Forward Current, IF[mA] Reverse Current, IR[nA] TJ= 125 C o 10000 TJ=125 C 1000 o o TJ= 75 C 10 TJ= 25 C o o 100 TJ=75 C 10 TJ=25 C o 1 0.2 1 0.4 0.6 0.8 1.0 1.2 1.4 10 20 30 40 50 60 70 80 90 100 Forward Voltage Drop, VF[V] Reverse Voltage, VR[V] Figure 3. Junction Capacitance 2.5 Figure 4. Power Derating 300 f=1mhz Juntion Capacitance, CJ[pF] 2.3 250 Power Dissipation, [mW] 2.0 200 1.8 150 1.5 100 1.3 50 1.0 0 0 2 4 6 8 10 0 25 50 75 100 o 125 150 Reverse Voltage, VR[V] Ambient Temperature, T a[ C] © 2007 Fairchild Semiconductor Corporation BAS70SL Rev. 1.0.0 2 www.fairchildsemi.com BAS70SL — Schottky Barrier Diodes © 2007 Fairchild Semiconductor Corporation BAS70SL Rev. 1.0.0 3 www.fairchildsemi.com BAS70SL BAS70SL Schottky Barrier Diodes TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation BAS70SL Rev. 1.0.0 4 www.fairchildsemi.com
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