BAV19_01

BAV19 / BAV20 / BAV21 BAV19 / 20 / 21 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage BAV19 BAV20 BAV21 Value 120 200 250 200 1.0 4.0 -65 to +200 175 Units V V V mA A A °C °C Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature Tstg TJ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA Power Dissipation Thermal Resistance, Junction to Ambient TA = 25°C unless otherwise noted Parameter Value 500 300 Units mW °C/W Electrical Characteristics Symbol VR Parameter Breakdown Voltage BAV19 BAV20 BAV21 Test Conditions IR = 100 µA IR = 100 µA IR = 100 µA IF = 100 mA IF = 200 mA VR = 100 V VR = 100 V, TA = 150°C VR = 150 V VR = 150 V, TA = 150°C VR = 200 V VR = 200 V, TA = 150°C VR = 0, f = 1.0 MHz IF = IR = 30 mA, IRR = 3.0 mA, RL = 100Ω Min 120 200 250 Max Units V V V V V nA µA nA µA nA µA pF ns VF IR Forward Voltage Reverse Current BAV19 BAV20 BAV21 CT trr Total Capacitance Reverse Recovery Time 1.0 1.25 100 100 100 100 100 100 5.0 50 2001 Fairchild Semiconductor Corporation BAV19/20/21, Rev. C BAV19 / BAV20 / BAV21 Small Signal Diode (continued) Typical Characteristics 325 50 Ta=25 °C ° T a= 25 °C Reverse Current, I R [ nA] Reverse Voltage, V [ V] R 40 30 300 20 10 275 3 5 10 20 30 50 100 0 55 R everse C urrent, I R [ uA] R everse Voltage, V R [ V] GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature 100 Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100uA 100 Figure 2. Reverse Current vs Reverse Voltage IR - 55 to 205 V Ta= 25 ° C 450 T a= 25 ° C 90 80 70 60 50 40 30 20 Forward Voltage, V R [mV] 180 200 220 240 255 Reverse Current, I R [nA] 400 350 300 250 Reverse Voltage, V R [V] 1 2 3 5 10 20 30 50 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Forward Current, IF [uA] Figure 3. Reverse Current vs Reverse Roltage IR - 180 to 225 V Figure 4. Forward Voltage vs Forward Current VF - 1.0 to 100uA Ta= 25 °C 700 1.4 1.3 ° T a= 25 C Forward Voltage, V F [mV] 650 Forward Voltage, VF [mV] 1.2 1.1 1.0 0.9 0.8 0.7 600 550 500 450 0.1 0.2 0.3 0.5 1 2 3 5 10 10 20 30 50 100 200 300 500 800 Forward Current, I F [mA] Forward Current, IF [mA] Figure 5. Forward Voltage vs Forward Current VF - 0.1 to 10mA Figure 6. Forward Voltage vs Forward Current VF - 10 to 800mA BAV19/20/21, Rev. C BAV19 / BAV20 / BAV21 Small Signal Diode (continued) Typical Characteristics (continued) 900 800 1.3 Ta= 25 °C Ta= -40°°C Forward Voltage, V [ mV] F Total Capacitance [pF] 1 3 10 1.2 700 600 500 400 Ta= 25 ° C 1.1 1.0 T a= +80 ° C 300 200 100 0.001 0.9 0.003 0.01 0.03 0.1 0.3 0.8 0 2 4 6 8 10 12 14 F orw ard C urrent, I F [ m A ] Reverse Voltage [V] Figure 7. Forward Voltage vs Ambient Temperature VF - 1.0 uA - 10 mA (-40 to +80 Deg C) 50 400 Figure 8. Total Capacitance Reverse Recovery Time [nS] 300 C urrent [mA] 40 200 IF (A V ) -A V ER AG 30 ER E CT 100 IF I E DC U RR EN I F = I R = 3 0 mA Rloop = 100 Ohms 20 1.0 1.5 2.0 2.5 3.0 0 0 50 100 TmA 150 Reverse Recovery Current, I rr [ mA] Ambient Temperature, T A [ C ] Figure 9. Reverse Recovery Time vs Reverse Recovery Current Figure 10. Average Rectified Current (IF(AV)) versus Ambient Temperature (TA) 500 Power Dissipation, P [mW] D 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 50 100 150 200 Average Temperature, IO [ C] Figure 11. Power Derating Curve BAV19/20/21, Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4