BC237C

BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO VEBO IC PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC237 : BC238/239 : BC237 : BC238/239 : BC237 : BC238/239 1 TO-92 1. Collector 2. Base 3. Emitter Value 50 30 45 25 6 5 100 500 150 -55 ~ 150 Units V V V V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC237 : BC238/239 Emitter Base Breakdown Voltage : BC237 : BC238/239 Collector Cut-off Current : BC237 : BC238/239 DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Base Capacitance Noise Figure : BC237/238 : BC239 : BC239 Test Condition IC=2mA, IB=0 Min. 45 25 6 5 0.2 0.2 120 0.07 0.2 0.73 0.87 0.55 150 0.62 85 250 3.5 8 2 10 4 4 6 15 15 800 0.2 0.6 0.83 1.05 0.7 V V V V V MHz MHz pF pF dB dB dB Typ. Max. Units V V V V nA nA BVEBO IE=1µA, IC=0 ICES VCE=50V, VBE=0 VCE=30V, VBE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=3V, IC=0.5mA, f=100MHz VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz VCE=5V, IC=0.2mA, f=1KHz RG=2KΩ VCE=5V, IC=0.2mA RG=2KΩ, f=30~15KHz hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF hFE Classification Classification hFE ©2002 Fairchild Semiconductor Corporation A 120 ~ 220 B 180 ~ 460 C 380 ~ 800 Rev. A2, August 2002 BC237/238/239 Typical Characteristics 100 100 80 IB = 350µA IB = 300µA IB = 250µA IB = 200µA IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT IB = 400µA VCE = 5V 10 60 40 IB = 150µA IB = 100µA 1 20 IB = 50µA 0 0 2 4 6 8 10 12 14 16 18 20 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Transfer Characteristic VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 10000 VCE = 5V 1000 IC = 10 IB hFE, DC CURRENT GAIN 1000 V BE(sat) 100 100 10 V CE(sat) 1 1 10 100 1000 10 1 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 1000 fT, CURRENT GAIN-BANDWIDTH PRODUCT Cob[pF], CAPACITANCE f=1MHz IE = 0 10 VCE = 5V 100 1 10 0.1 1 10 100 1000 1 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC237/238/239 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1