BCP52

BCP52 Discrete POWER & Signal Technologies BCP52 C E C B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 60 60 5.0 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Ambient Max BCP52 1.5 12 83.3 Units W mW/ °C °C/W ©1997 Fairchild Semiconductor Corporation BCP52 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 100 µ A, IE = 0 IE = 10 µ A, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 125°C VEB = 5.0 V, IC = 0 60 60 5.0 100 10 10 V V V nA µA µA ON CHARACTERISTICS hFE DC Current Gain IC = 5.0 mA, VCE = 2.0 V IC = 150 mA, VCE = 2.0 V IC = 500 mA, VCE = 2.0 V IC = 500 mA, I B = 50 mA IC = 500 mA, VCE = 2.0 V 25 40 25 250 0.5 1.0 V V VCE( sat) VBE( on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage Typical Characteristics vs Collector Current 400 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Typical Pulsed Current Gain h FE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0.6 0.5 0.4 0.3 0.2 0.1 0 0.01 0.1 I C - COLLECTOR CURRENT (A) P8 V CE = 5V 300 1 25 °C β = 10 - 40 ºC 25 °C 200 - 40 ºC 25 °C 100 125 ºC 0 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 1 1.5 BCP52 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) V - BASE-EMITTER ON VOLTAGE (V) BE(ON) VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 β = 10 Base-Emitter ON Voltage vs Collector Current 1 0.8 0.8 - 40 ºC 25 °C 125 ºC - 40 ºC 25 °C 0.6 0.6 125 ºC 0.4 0.4 1 10 100 I C - COLLECTOR CURRENT (mA) P 78 VCE = 5V 1 I C 1000 0.2 10 100 - COLLECTOR CURRENT (mA) P8 1000 C OBO - COLLECTOR-BASE CAPACITANCE (pF) Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 100 VCB = 40V 10 Collector-Base Capacitance vs Collector-Base Voltage 40 F = 1.0 MHz 30 1 20 0.1 10 25 50 75 100 125 TA - AMBIENT TEMPERATURE (ºC) P8 150 0 0 4 8 12 Pr 78 16 20 24 28 V CB- COLLECTOR-BASE VOLTAGE (V) h FE - GAIN BANDWIDTH PRODUCT (MHz) Gain Bandwidth Product vs Collector Current 250 V CE = 10V 200 150 100 50 0 PD - POWER DISSIPATION (W) 1.5 1.25 Power Dissipation vs Ambient Temperature SOT-223 1 0.75 0.5 0.25 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 0 25 50 75 100 TEMPERATURE (o C) 125 150 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.