BCW65C

BCW65C Discrete POWER & Signal Technologies BCW65C C E SOT-23 Mark: ED B NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 32 60 5.0 1.0 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max *BCW65C 350 2.8 357 Units mW mW/°C °C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. ã 1997 Fairchild Semiconductor Corporation BCW65C NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICES IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 10 µ A, IE = 0 IE = 10 µ A, IC = 0 VCB = 32 V, IE = 0 VCB = 32 V, IE = 0, TA = 150°C VEB = 4.0 V, IC = 0 32 60 5.0 20 20 20 V V V nA µA nA ON CHARACTERISTICS hFE DC Current Gain IC = 100 µ A, VCE = 10 V IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 500 mA, VCE = 2.0 V IC = 100 mA, IB = 10 mA IC = 500 mA, B = 50 mA IC = 500 mA, IB = 50 mA 80 180 250 50 630 0.3 0.7 2.0 V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure IC = 20 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 0.2 mA, VCE = 5.0, RS = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz 100 12 80 10 MHz pF pF dB Typical Characteristics 500 VCE = 5V VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 400 300 200 25 °C 125 °C Collector-Emitter Saturation Voltage vs Collector Current 0.4 β = 10 0.3 125 °C 25 °C 0.2 100 - 40 °C 0.1 - 40 °C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 1 10 100 I C - COLLECTOR CURRENT (mA) 500 BCW65C NPN General Purpose Amplifier (continued) Typical Characteristics V BE(ON) BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 β = 10 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 °C 25 °C 0.8 - 40 °C 25 °C 0.6 0.6 125 °C 125 °C 0.4 0.4 1 IC 10 100 - COLLECTOR CURRENT (mA) 500 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Collector-Cutoff Current vs Ambient Temperature I CBO- COLLECTOR CURRENT (nA) 500 Emitter Transition and Output Capacitance vs Reverse Bias Voltage 20 CAPACITANCE (pF) 16 12 C te 100 10 1 0.1 V CB = 40V f = 1 MHz 8 4 C ob 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( °C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 Power Dissipation vs Ambient Temperature 350 P D - POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 SOT-23 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.