BD435

BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD433 : BD435 : BD437 VCES Collector-Emitter Voltage : BD433 : BD435 : BD437 Collector-Emitter Voltage : BD433 : BD435 : BD437 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 22 32 45 22 32 45 22 32 45 5 4 7 1 36 150 - 65 ~ 150 V V V V V V V V V V A A A W °C °C Value Units VCEO VEBO IC ICP IB PC TJ TSTG ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD433/435/437 Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD433 : BD435 : BD437 Collector Cut-off Current : BD433 : BD435 : BD437 ICEO Collector Cut-off Current : BD433 : BD435 : BD437 IEBO hFE Emitter Cut-off Current * DC Current Gain : BD433/435 : BD437 : ALL DEVICE : BD433/435 : BD437 VCE(sat) * Collector-Emitter Saturation Voltage : BD433 : BD435 : BD437 * Base-Emitter ON Voltage : BD433 : BD435 : BD437 Current Gain Bandwidth Product VCE = 5V, IC = 10mA VCE = 1V, IC = 500mA VCE = 1V, IC = 2A 40 30 85 50 40 130 130 140 VCE = 22V, VBE = 0 VCE = 32V, VBE = 0 VCE = 45V, VBE = 0 VEB = 5V, IC = 0 100 100 100 1 µA µA µA mA VCB = 22V, IE = 0 VCB = 32V, IE = 0 VCB = 45V, IE = 0 100 100 100 µA µA µA Test Condition IC = 100mA, IB = 0 Min. 22 32 45 Typ. Max. Units V V V ICBO IC = 2A, IB = 0.2A 0.2 0.2 0.2 0.5 0.5 0.6 1.1 1.1 1.2 V V V V V V MHz VBE(on) VCE = 1V, IC = 2A fT VCE = 1V, IC = 250mA 3 * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD433/435/437 Typical Characteristics 1000 1 100 VCE(sat)[V], SATURATION VOLTAGE VCE = 1V IC = 10 IB hFE, DC CURRENT GAIN 0.1 10 1 0.01 0.1 1 10 100 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 5.0 4.5 1000 VCE = 1V IC[A], COLLECTOR CURRENT 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 CCBO(pF), COLLECTOR BASE CAPACITANCE 100 10 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0 1 0.1 1 10 100 1000 VBE[V], BASE-EMITTER VOLTAGE VCB[V], COLLECTOR BASE VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capacitance 10 IC MAX. (Pulsed) 10 1 ms ms DC 10µ s 48 100µs 42 IC[A], COLLECTOR CURRENT IC Max. (Continuous) PC[W], POWER DISSIPATION 100 36 30 1 24 18 12 0.1 1 BD433 BD435 BD437 10 6 0 0 25 50 o 75 100 125 150 175 200 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD433/435/437 Package Demensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 ±0.30 (0.50) 1.75 ±0.20 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ DISCLAIMER FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H2