BD534

BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD533, BD535 and BD537 respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD534 : BD536 : BD538 : BD534 : BD536 : BD538 Value - 45 - 60 - 80 - 45 - 60 - 80 -5 -8 -1 50 150 - 65 ~ 150 Units V V V V V V V A A W °C °C VCEO Collector-Emitter Voltage VEBO IC IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current : BD534 : BD536 : BD538 : BD534 : BD536 : BD538 Test Condition VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VEB = - 5V, IC = 0 VCE = -2 V, IC = - 500mA VCE = - 5V, IC = - 10mA VCE = - 2V, IC = - 2A 40 20 15 25 15 30 15 40 20 - 0.8 - 1.5 3 12 75 100 - 0.8 V V V MHz Min. Typ. Max. - 100 - 100 - 100 - 100 - 100 - 100 -1 Units µA µA µA µA µA µA mA ICES Collector Cut-off Current IEBO hFE Emitter Cut-off Current * DC Current Gain : ALL DEVICE : BD534/536 : BD538 : BD534/536 : BD538 : ALL DEVICE : ALL DEVICE hFE hFE Groups J K VCE = - 2V, IC = - 2A VCE = - 2V, IC = - 3A VCE = -2V, IC = - 2A VCE = - 2V, IC = - 3A IC = - 2A, IB = - 0.2A IC = - 6A, IB = - 0.6A VCE = - 2V, IC = - 2A VCE = - 1V, IC = - 500mA VCE(sat) VBE(on) fT * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product * Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD534/536/538 Typical Characteristics VBE(sat)[V], VCE(sat)[V], SATURATION VOLTAGE 1000 VCE = -2V IC = 10 IB -1 V BE(sat) hFE, DC CURRENT GAIN 100 -0.1 VCE(sat) 10 -0.01 -0.1 -1 -10 -0.01 -0.1 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -100 80 70 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION -1000 60 -10 IC(max) 10 m 10 µs 50 1m s s 100µ s DC 40 30 -1 20 BD534 BD536 BD538 -0.1 -1 -10 -100 10 0 0 25 50 o 75 100 125 150 175 200 VCE [V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 3. Safe Operating Area Figure 4. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD534/536/538 Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2000 Fairchild Semiconductor International Rev. E