BPW36

BPW36/BPW37 HERMETIC SILICON PHOTOTRANSISTOR PACKAGE DIMENSIONS FEATURES • Hermetically sealed package • Narrow reception angle 0.209 (5.31) 0.184 (4.67) • European “Pro Electron” registered DESCRIPTION 0.030 (0.76) NOM 0.255 (6.48) • The BPW36/37 are silicon phototransistors mounted in narrow angle TO-18 packages. 0.50 (12.7) MIN SCHEMATIC C 0.020 (0.51) 3X Base 0.100 (2.54) 0.050 (1.27) B Emitter Collector (Case) E 0.040 (1.02) 0.040 (1.02) 45° Ø0.100 (2.54) NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 45 45 5 300 600 Unit °C °C °C °C V V V mW mW  2001 Fairchild Semiconductor Corporation DS300279 3/13/01 1 OF 4 www.fairchildsemi.com BPW36/BPW37 HERMETIC SILICON PHOTOTRANSISTOR ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25°C) (All measurements made under pulse conditions) SYMBOL MIN TYP MAX UNITS Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current BPW36 On-State Collector Current BPW37 Turn-On Time Turn-Off Time Saturation Voltage IC = 10 mA, Ee = 0 IE = 100 µA, Ee = 0 IC = 100 µA, Ee = 0 VCE = 10 V, Ee = 0 Ee = 0.5 mW/cm2 VCE = 5 V(7) Ee = 0.5 mW/cm2 VCE = 5 V(7) IC = 2 mA, VCC = 10 V RL = 100 IC = 2 mA, VCC = 10 V RL = 100 IC = 1.0 mA, Ee = 3.0 mW/cm2 BVCEO BVEBO BVCBO ICEO 45 5.0 45 — — — — — — ±10 — — 8 7 — — — — 100 — — — — — 0.40 V V V nA Deg. mA mA µs µs V IC(ON) IC(ON) ton toff VCE(SAT) 1.0 0.5 — — — TYPICAL PERFORMANCE CURVES 10 10 IL - NORMALIZED LIGHT CURRENT Ee = 20 mW/cm2 10 mW/cm2 5 mW/cm2 IL - NORMALIZED LIGHT CURRENT 1.0 1.0 2 mW/cm2 0.1 1 mW/cm2 Normalized to: VCE = 5 V Ee = 10 mW/cm2 .01 .01 0.1 1.0 10 100 0.1 Normalized to: VCE = 5 V Ee = 10 mW/cm2 .01 0.1 1.0 10 100 VCE - COLLECTOR TO EMITTER VOLTAGE H - TOTAL IRRADIANCE IN mW/cm2 Fig. 1 Light Current vs. Collector to Emitter Voltage Fig. 2 Normalized Light Current vs. Radiation www.fairchildsemi.com 2 OF 4 3/13/01 DS300279 BPW36/BPW37 HERMETIC SILICON PHOTOTRANSISTOR TYPICAL PERFORMANCE CURVES 10 10 IL - NORMALIZED LIGHT CURRENT SWITCHING TIME (µs) RL = 1 k 1.0 1.0 Normalized to: VCE = 10 V IL = 2 mA tON = tOFF = 5 µs RL = 100 0.1 RL = 100 RL = 10 Normalized to: VCE = 5 V Ee = 10 mW/cm2 TA = 25˚C 0.1 -50 0 50 100 150 0.1 1.0 10 100 TA - TEMPERATURE (˚C) IL - OUTPUT CURRENT (mA) Fig. 3 Normalized Light Current vs. Temperature Fig. 4 Switching Times vs. Output Current 106 1.4 IL - NORMALIZED DARK CURRENT IL - NORMALIZED LIGHT CURRENT 105 104 103 102 10.0 1.0 1.2 CQX14 1.0 0.8 0.6 0.4 0.2 0 BPW36 OR BPW37 Normalized to: ID @ 25˚C VCEO = 10 V Normalized to: CQX14 Input = 10 mA VCEO = 10 V IL = 100 µA TA = 25˚C 55 35 15 5 25 45 65 85 105 0.1 0 25 50 75 100 125 150 TA - TEMPERATURE (˚C) TA - TEMPERATURE (˚C) Fig. 5 Dark Current vs. Temperature Fig. 6 Normalized Light Current vs. Temperature Both Emitter (CQX14) and Detector (BPW36 or BPW37) at Same Temperature DS300279 3/13/01 3 OF 4 www.fairchildsemi.com BPW36/BPW37 HERMETIC SILICON PHOTOTRANSISTOR DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 4 OF 4 3/13/01 DS300279