FDB6670S

FDP6670S/FDB6670S September 2001 FDP6670S/FDB6670S 30V N-Channel PowerTrench® SyncFET ™ General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6670S/FDB6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode. Features • 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (23nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed T A =25 oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1) (Note 1) Units V V A W W/°C °C °C 62 150 62.5 0.5 –55 to +150 275 Total Power Dissipation @ TC = 25° C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.1 62.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDB6670S FDP6670S Device FDB6670S FDP6670S Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 units 45 © 2001 Fairchild Semiconductor Corporation FDP6670S/FDB6670S Rev E(W) FDP6670S/FDB6670S Electrical Characteristics Symbol W DSS IAR T A = 25°C unless otherwise noted Parameter (Note 1) Test Conditions VDD = 25 V, ID = 16.5 A Min Typ Max Units 285 16.5 mJ A Drain-Source Avalanche Ratings Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 1mA 30 24 500 100 –100 V mV/°C µA nA nA ID = 26mA, Referenced to 25°C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V VGS = –20 V, VDS = 0 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 1mA 1 2.2 –4.5 5 8 10 3 V mV/°C ID = 26mA, Referenced to 25°C VGS = 10 V, ID = 31 A VGS = 4.5 V, ID = 26.5 A VGS=10 V, ID = 31 A, TJ=125°C VGS = 10 V, VDS = 10 V, VDS = 10 V ID = 31 A 60 8.5 12.5 19 mΩ ID(on) gFS A 69 S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 2639 737 222 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDS = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 13 10 39 35 24 21 62 56 32 ns ns ns ns nC nC nC VDS = 15 V, VGS = 5 V ID = 31 A, 23 9 8 Drain–Source Diode Characteristics VSD trr Qrr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 3.5 A, diF/dt = 300 A/µs (Note 1) (Note 1) 0.39 0.48 32 56 0.7 0.9 V nS nC (Note 2) Notes: 1 . Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2 . See “SyncFET Schottky body diode characteristics” below. F DP6670S/FDB6670S Rev E (W) FDP6670S/FDB6670S Typical Characteristics 150 2.2 5.0V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 120 I D, DRAIN CURRENT (A) 6.0V 2 VGS = 4.0V 4.5V 90 1.8 1.6 1.4 1.2 1 0 .8 4.5V 5.0V 6.0V 7.0V 8.0V 10V 60 4.0V 30 3.5V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 5 0 30 60 90 I D, DRAIN CURRENT (A) 120 150 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.027 R DS(ON), ON-RESISTANCE (OHM) 1.6 ID = 31A VGS = 10V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 ID = 15.5A 0.022 0.017 1.2 TA = 125 C 0.012 TA = 25 C 0.007 o o 1 0.8 0.002 2 0.6 -50 -25 0 25 50 75 100 125 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 80 VDS = 5V ID , DRAIN CURRENT (A) 60 TA = -55 C 25 C 125 C o o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 I S, REVERSE DRAIN CURRENT (A) o VGS = 0V TA = 125 C 1 25 C 0.1 -55 C o o o 40 20 0 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) 4.5 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. F DP6670S/FDB6670S Rev E (W) FDP6670S/FDB6670S Typical Characteristics (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 31A VDS = 10V 15V 3600 f = 1MHz VGS = 0 V 3000 20V CAPACITANCE (pF) 2400 1800 1200 600 CRSS 0 COSS C ISS 8 6 4 2 0 0 10 20 30 40 50 Qg, GATE CHARGE (nC) 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 1000 Figure 8. Capacitance Characteristics. I D, DRAIN CURRENT (A) 10us R DS(ON) LIMIT 100µs 1ms 10ms 800 SINGLE PULSE RθJC = 2.1°C/W T A = 25°C 100 600 10 VGS = 10V SINGLE PULSE o R θJC = 2 .1 C/W o TA = 25 C 100ms DC 400 200 1 0.1 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) 100 0 0.0001 0.001 0.01 t1 , TIME (sec) 0.1 1 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 R θ J C(t) = r(t) * Rθ J C R θJ C = 2.1 °C/W 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk t1 t2 T J - T c = P * Rθ J C(t) Duty Cycle, D = t1 / t2 0.01 0.00001 0.0001 0.001 t 1, TIME (sec) 0.01 0.1 1 Figure 11. Transient Thermal Response Curve. F DP6670S/FDB6670S Rev E (W) FDP6670S/FDB6670S Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP6670S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. 0.01 TA = 100 C o IDSS, REVERSE LEAKAGE CURRENT (A) CURRENT: 0.8A/div 0.001 0.0001 TA = 25 C o TIME: 12.5ns/div 0.00001 Figure 12. FDP6670S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDP6670A). 0 10 20 30 VDS, REVERSE VOLTAGE (V) CURRENT: 0.8A/div TIME: 12.5ns/div Figure 13. Non-SyncFET (FDP6670A) body diode reverse recovery characteristic. F DP6670S/FDB6670S Rev E (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4