FDFMA2P857

FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode March 2008 FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode –20V, –3.0A, 120mΩ Features MOSFET: Max rDS(on) = 120mΩ at VGS = –4.5V, ID = –3.0A Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.5A Max rDS(on) = 240mΩ at VGS = –1.8V, ID = –1.0A General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications. Schottky: VF < 0.54V @ 1A Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant Pin 1 A NC D A1 NC 2 D3 C MicroFET 2x2 G S 6C 5G 4S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG VRRM IO Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) (Note 1b) (Note 1a) Ratings 20 ±8 –3 –6 1.4 0.7 –55 to +150 30 1 Units V V A W °C V A Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 173 86 140 °C/W Package Marking and Ordering Information Device Marking .857 Device FDFMA2P857 Package MicroFET 2x2 1 Reel Size 7’’ Tape Width 8mm Quantity 3000 units www.fairchildsemi.com ©2008 Fairchild Semiconductor Corporation FDFMA2P857 Rev.B1 FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = –250μA, VGS = 0V ID = –250μA, referenced to 25°C VDS = –16V, VGS = 0V VGS = ±8V, VDS = 0V –20 –12 –1 ±100 V mV/°C μA nA On Characteristics VGS(th) ΔVGS(th) ΔTJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = –250μA ID = –250μA, referenced to 25°C VGS = –4.5V, ID = –3.0A Static Drain to Source On Resistance VGS = –2.5V, ID = –2.5A VGS = –1.8V, ID = –1.0A VGS = –4.5V, ID = –3.0A, TJ = 125°C Forward Transconductance VDS = –5V, ID = –3.0A –0.4 –0.7 2 90 120 172 118 7 120 160 240 160 S mΩ –1.3 V mV/°C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = –10V, VGS = 0V, f = 1.0MHz 435 80 45 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = –10V ID = –3.0A VGS = –4.5V VDD = –10V, ID = –1A VGS = –4.5V, RGEN = 6Ω 9 11 15 6 4 0.8 0.9 18 19 27 12 6 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = –1.1A (Note 2) –0.8 17 6 –1.1 –1.2 A V ns nC IF = –3.0A, di/dt = 100A/μs Schottky Diode Characteristics TJ = 25°C IR Reverse Leakage VR = 10V TJ = 85°C TJ = 125°C TJ = 25°C IR Reverse Leakage VR = 20V TJ = 85°C TJ = 125°C TJ = 25°C VF Forward Voltage IF = 100mA TJ = 85°C TJ = 125°C TJ = 25°C VF Forward Voltage IF = 1 A TJ = 85°C TJ = 125°C FDFMA2P857 Rev.B1 2 0.5 0.05 0.6 1.1 0.09 0.9 0.37 0.29 0.23 0.5 0.46 0.43 4.5 1.0 8.4 8.0 1.6 10 0.40 0.35 0.29 0.54 0.51 0.48 μA mA mA μA mA mA V V V V V V www.fairchildsemi.com FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1: RθJA is determined with the device mounted on a 1in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) MOSFET RθJA = 86oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. (b) MOSFET RθJA = 173oC/W when mounted on a minimum pad of 2 oz copper. (c) Schottky RθJA = 86oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. (d) Schottky RθJA = 140oC/W when mounted on a minimum pad of 2 oz copper. a)86oC/W when mounted on a 1in2 pad of 2 oz copper. b)173oC/W when mounted on a minimum pad of 2 oz copper. c)86oC/W when mounted on a 1in2 pad of 2 oz copper. d)140oC/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. FDFMA2P857 Rev.B1 3 www.fairchildsemi.com FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TA = 25°C unless otherwise noted VGS =-4.5V -3V -3.5V -1.8V -2.5V -2V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 -ID, DRAIN CURRENT (A) 3.0 VGS =-1.5V 5 4 3 2 1 0 0.0 2.5 2.0 1.5 1.0 0.5 -1.8V -2.0V -2.5V -3.0V -3.5V -4.5V -1.5V 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 6 -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 0.28 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (OHM) DRAIN TO SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1.0 0.9 0.8 -50 ID =-3A VGS = -4.5V ID =-1.5A RDS(ON), NORMALIZED 0.22 0.16 TA = 125oC 0.10 TA = 25oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 0.04 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On- Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 10 VGS = 0V 6 5 4 3 2 1 0 0.0 TA = 125oC VDS = -5V -ID, DRAIN CURRENT (A) 1 0.1 0.01 0.001 0.0001 0.0 TA = 125oC 25oC -55oC -55oC 25oC 0.5 1.0 1.5 2.0 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDFMA2P857 Rev.B1 4 www.fairchildsemi.com FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TA = 25°C unless otherwise noted GATE TO SOURCE VOLTAGE(V) 5 ID = -3A 700 600 CAPACITANCE (pF) f = 1MHz VGS = 0V 4 3 2 1 0 VDS= -5V -15V 500 400 300 200 100 Coss Ciss -10V -VGS, 0 1 2 3 Qg, GATE CHARGE(nC) 4 5 0 0 Crss 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics 10 100 ID, DRAIN CURRENT (A) Figure 8. Capacitance Characteristics 200 100 100us 1ms 1 P(PK), PEAK TRANSIENT POWER (W) RDS(ON) LIMITED 10 10ms 0.1 VGS = -4.5V SINGLE PULSE RθJA = 173oC/W TA = 25oC 100ms 1s 10s DC 1 SINGLE PULSE RθJA = 173 C/W o 0.01 0.1 1 10 100 0.1 -4 10 10 -3 VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 10 t, PULSE WIDTH (s) -2 -1 0 1 10 2 10 3 Figure 9. Forward Bias Safe Operating Area IR, REVERSE LEAKAGE CURRENT (mA) 3 Figure 10. Single Pulse Maximum Power Dissipation 10 TJ = 125oC IF, FORWARD CURRENT(A) 1 TJ = 125oC 1 0.1 TJ = 85oC 0.1 85oC 0.01 0.001 TJ = 25oC 0.01 25oC 0.001 0 100 200 300 400 VF, FORWARD VOLTAGE(mV) 500 600 0.0001 0 5 10 15 20 VR, REVERSE VOLTAGE (V) 25 30 Figure 11. Schottky Diode Forward Current Figure 12. Schottky Diode Reverse Current FDFMA2P857 Rev.B1 5 www.fairchildsemi.com FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TA = 25°C unless otherwise noted 1 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE o RθJA = 173 C/W NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDFMA2P857 Rev.B1 6 www.fairchildsemi.com FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Dimensional Outline and Pad Layout rev3 FDFMA2P857 Rev.B1 7 www.fairchildsemi.com FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDFMA2P857 Rev.B1 8 www.fairchildsemi.com