FDN360

FDN360P February 1999 FDN360P Single P-Channel PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • -2 A, -30 V. RDS(on) = 0.080 Ω @ VGS = -10 V RDS(on) = 0.125 Ω @ VGS = -4.5 V. • • • • Low gate charge (5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications • • • DC/DC converter Load switch Motor drives D D S SuperSOT -3 TM G TA = 25°C unless otherwise noted G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings -30 (Note 1a) Units V V A W °C ±20 -2 -20 0.5 0.46 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 °C/W °C/W Package Outlines and Ordering Information Device Marking 360 Device FDN360P Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©1999 Fairchild Semiconductor Corporation FDN360P Rev. D FDN360P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) -30 20 -1 100 -100 V mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -10 V, ID = -2 A VGS = -10 V, ID = -2 A, TJ=125°C VGS = -4.5 V, ID = -1.5 A VGS = -10 V, VDS = -5 V VDS = -5 V, ID = -2 A -1 -1.8 -4 0.060 0.080 0.095 -3 V mV/°C 0.080 0.136 0.125 Ω ID(on) gFS -20 5.5 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -15 V, VGS = 0 V, f = 1.0 MHz 420 140 60 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω 9 8 18 6 18 16 29 12 7 ns ns ns ns nC nC nC VDS = -15 V, ID = -2 A, VGS = -10 V, 5 1.7 1.8 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note 2) -0.42 -0.75 -1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 Pad of 2 oz. Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% b) 270°C/W when mounted on a 0.001 in2 pad of 2 oz. Cu. FDN360P Rev. D FDN360P Typical Characteristics 20 -6.0V -5.0V -4.5V 12 -4.0V 8 -3.5V 4 -3.0V 0 0 1 2 3 4 5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS= -10V -ID, DRAIN CURRENT (A) 16 2.5 2 VGS= -4.0V 1.5 -4.5V -5.0V -6.0V -7.0V 1 -10V 0.5 0 4 8 12 16 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.3 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 RDS(ON), ON RESISTANCE (OHM) ID= -1.0A 0.2 ID= -2.0A VGS= -10V 1.2 1.1 0.15 1 0.1 TJ=125 C 25 C o o 0.9 0.05 0.8 -50 -25 0 25 50 75 100 o 125 150 0 2 3 4 5 6 7 8 9 10 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 10 VDS= -5V -ID, DRAIN CURRENT (A) 8 25 C 6 o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VGS= 0V 10 TJ=-55 C o 125 C o 1 TJ=125 C 25 C -55 C o o o 4 0.1 2 0.01 0 1 2 3 4 5 0.001 0.2 0.4 0.6 0.8 1 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN360P Rev. D FDN360P Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID= -2.0A 8 VDS= -5.0V 6 -10V (continued) 600 f=1MHz VGS= 0V 480 CAPACITANCE (pF) Ciss 360 -15V 4 240 Coss Crss 2 120 0 0 2 4 6 8 10 0 0 6 12 18 24 30 Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 SINGLE PULSE RθJA=270 C/W TA=25 C POWER (W) 30 o o -ID, DRAIN CURRENT (A) 10 RDS(ON) Limit 100µs 1ms 40 1 1s 0.1 VGS= -10V SINGLE PULSE RθJC=270 C/W TA=25 C 0.01 0.1 1 o o 10ms 100ms 10s DC 20 10 0 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R θJA (t) = r(t) * RθJA R θJA = 270 °C/W t1 t2 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 0.001 0.0001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDN360P Rev. D SuperSOTTM-3 Tape and Reel Data and Package Dimensions SSOT-3 Packaging Configuration: Figure 1.0 Customize Label Packaging Description: SSOT-3 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. These full reels are individually labeled and placed inside a standard intermediate made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains eight reels maximum. And these intermediate boxes are placed inside a labeled shipping box which comes in different sizes depending on the number of parts shipped. Antistatic Cover Tape Human Readable Embossed Label Carrier Tape 3P SSOT-3 Std Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 3,000 7" Dia D87Z TNR 10,000 13" 3P 3P 3P SSOT-3 Std Unit Orientation 343mm x 342mm x 64mm Intermediate box for D87Z Option Human Readable Label 187x107x183 343x343x64 24,000 0.0097 0.1230 30,000 0.0097 0.4150 Human Readable Label sample Human Readable Label SSOT-3 Tape Leader and Trailer Configuration: Figure 2.0 187mm x 107mm x 183mm Intermediate Box for Standard Option Carrier Tape Cover Tape Components Trailer Tape 300mm minimum or 75 empty pockets Leader Tape 500mm minimum or 125 empty pockets August 1999, Rev. C SuperSOTTM-3 Tape and Reel Data and Package Dimensions, continued SSOT-3 Embossed Carrier Tape Configuration: Figure 3.0 P0 T E1 P2 D0 D1 F E2 B0 Wc W Tc K0 P1 A0 User Direction of Feed Dimensions are in millimeter Pkg type SSOT-3 (8mm) A0 3.15 +/-0.10 B0 2.77 +/-0.10 W 8.0 +/-0.3 D0 1.55 +/-0.05 D1 1.125 +/-0.125 E1 1.75 +/-0.10 E2 6.25 min F 3.50 +/-0.05 P1 4.0 +/-0.1 P0 4.0 +/-0.1 K0 1.30 +/-0.10 T 0.228 +/-0.013 Wc 5.2 +/-0.3 Tc 0.06 +/-02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SSOT-3 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 8mm Reel Option 7" Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 2.165 55 4.00 100 Dim W1 0.331 +0.059/-0.000 8.4 +1.5/0 0.331 +0.059/-0.000 8.4 +1.5/0 Dim W2 0.567 14.4 0.567 14.4 Dim W3 (LSL-USL) 0.311 – 0.429 7.9 – 10.9 0.311 – 0.429 7.9 – 10.9 8mm 13" Dia July 1999, Rev. C SuperSOTTM-3 Tape and Reel Data and Package Dimensions, continued SuperSOT™-3 (FS PKG Code 32) 1:1 Scale 1:1 on letter size paper Di mensions shown below are in: inches [mil limeters] Part Weight per unit (gram): 0.0097 September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench  QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D