FDZ293P_06

FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Feb 2006 FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS(on). Features • –4.6 A, –20 V rDS(on) = 46 mΩ @ VGS = –4.5 V rDS(on) = 72 mΩ @ VGS = –2.5 V • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package: less than 0.85 mm height when mounted to PCB • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Ultra-low Qg x rDS(on) figure-of-merit • High power and current handling capability. S Applications • Battery management • Load switch • Battery protection G AT E G D Bottom Top TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings –20 ±12 (Note 1a) Units V V A W °C –4.6 –10 1.7 –55 to +150 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 72 2 °C/W Package Marking and Ordering Information Device Marking B ©2005 Fairchild Semiconductor Corporation Device FDZ293P Reel Size 13” Tape width 8mm Quantity 10000 units FDZ293P Rev. D (W) FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Electrical Characteristics T Symbol BVDSS ∆BVDSS ∆T J IDSS IGSS VGS(th) ∆VGS(th) ∆T J RDS(on) A = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage. (Note 2) Test Conditions VGS = 0 V, ID = –250 µA Min Typ –20 –13 Max Units V mV/°C Off Characteristics ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = ±12 V, VGS = 0 V VDS = 0 V –0.6 –1 ±100 –0.8 3 36 58 47 –10 13 754 167 92 –1.5 µA nA V mV/°C On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS = –4.5 V, ID = –4.6 A, VGS = –2.5 V, ID = –3.6A, VGS = –4.5 V, ID = –4.6 A, TJ=125°C VGS = –4.5 V, VDS = –5 V, VDS = –5 V ID = –4.6 A 46 72 65 mΩ ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Notes: 1. A S pF pF pF Ω 20 20 35 31 11 ns ns ns ns nC nC nC –1.4 A V nS nC Dynamic Characteristics VDS = –10 V, f = 1.0 MHz VGS = 15 mV, VDD = –10 V, VGS = –4.5 V, V GS = 0 V , f = 1.0 MHz ID = –1 A, RGEN = 6 Ω 6 11 10 22 17 Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDS = –10V, VGS = –4.5 V ID = –4.6 A, 7.5 1.5 2.0 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –1.4 A Voltage Diode Reverse Recovery Time IF = –4.6 A, Diode Reverse Recovery Charge diF/dt = 100 A/µs (Note 2) –0.7 17 5 –1.2 the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user' board design. s a) 72°C/W when 2 mounted on a 1in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 157°C/W when mounted on a minimum pad of 2 oz copper RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ293P Rev. D (W) FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Typical Characteristics 10 NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.5V -2.5V 2.6 -3.0V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 -ID, DRAIN CURRENT (A) 8 VGS = -2.0V -2.0V 6 4 -2.5V -3.0V -3.5V -4.5V 2 0 0 0.5 1 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) 2 4 -ID, DRAIN CURRENT (A) 6 8 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.18 1.5 NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = -4.6A VGS = -4.5V ID = -2.3 A rDS(on), ON-RESISTANCE (OHM) 0.15 0.12 0.09 TA = 125oC 0.06 TA = 25oC 0.03 1.5 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V VDS = -5V -ID, DRAIN CURRENT (A) 8 1 TA = 125 C o o 6 0.1 4 TA = 125 C 2 o 25 C o 0.01 25 C 0.001 -55 C o -55 C 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) o 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ293P Rev. D (W) FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) 1200 ID = -4.6A VDS = -5V -15V -10V 4 1000 CAPACITANCE (pF) 800 600 400 200 Crss 0 0 5 10 15 Coss Ciss f = 1MHz VGS = 0 V 3 2 1 0 0 2 4 6 8 10 Qg, GATE CHARGE (nC) 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 rDS(on) LIMIT P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 20 SINGLE PULSE RθJA = 157° C/W TA = 25° C -ID, DRAIN CURRENT (A) 10 100µs 1ms 10ms 100ms 1s 15 1 VGS = -4.5V SINGLE PULSE RθJA = 157oC/W TA = 25oC DC 10s 10 0.1 5 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RθJA(t) = r(t) * RθJA RθJA = 157 ° C/W P(pk) t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 t1 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ293P Rev. D (W) FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Dimensional Pad and Layout FDZ293P Rev. D (W)