FDZ4670 N-Channel PowerTrench®MOSFET BGA
May 2007
FDZ4670
N-Channel PowerTrench MOSFET BGA
30V, 25A, 2.5mΩ
Features
Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 25A Max rDS(on) = 4.5mΩ at VGS = 4.5V, ID = 18.5A Ultra-thin package: less than 0.85mm height when mounted to PCB Outstanding thermal transfer characteristics Ultra-low gate charge x rDS(on) product RoHS Compliant
®
tm
General Description
Combining Farichild’s 30V PowerTrench process with state-ofthe-art BGA packaging, the FDZ4670 minimize both PCB space and rDS(on) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing capacity, ultra-low profile packaging, low gate charge and low rDS(on). This MOSFET feature faster switching and lower gate charge than other MOSFETs with comparable rDS(on) specifications resulting in DC/DC power supply designs and POL converters with higher overall efficiency.
Applications
DC - DC Conversion POL converters Index slot D
G
Bottom FLFBGA 3.5X4.0
Top
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings 30 ±20 25 60 2.5 1.25 -55 to +150 Units V V A W °C
Thermal Characteristics
RθJA RθJA RθJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1b) 50 100 0.85 °C/W
Package Marking and Ordering Information
Device Marking 4670 Device FDZ4670 Package FLFBGA 3.5X4.0
1
Reel Size 13’’
Tape Width 12mm
Quantity 3000 units
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©2007 Fairchild Semiconductor Corporation FDZ4670 RevD
FDZ4670 N-Channel PowerTrench®MOSFET BGA
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250μA, VGS = 0V ID = 250μA, referenced to 25°C VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V 30 -30 1 ±100 V mV/°C μA nA
On Characteristics
VGS(th) ΔVGS(th) ΔTJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA ID = 250μA, referenced to 25°C VGS = 10V, ID = 25A VGS = 4.5V, ID = 18.5A VGS = 10V, ID = 25A, TJ = 125°C VDD= 10V, ID = 25A 1 1.7 4.4 1.9 3.0 2.6 114 2.5 4.5 3.8 S mΩ 3 V mV/°C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 2660 1440 180 1.0 3540 1920 270 pF pF pF Ω
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = 10V, VDD = 15V, ID = 25A VDD = 15V, ID = 1.0A, VGS = 10V, RGEN = 6Ω 15 11 50 67 40 7 6 27 20 80 107 56 ns ns ns ns nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 1.8A (Note 2) 0.7 46 28 1.2 69 42 V ns nC IF = 25A, di/dt = 100A/μs
NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJCis determined by the user's board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper. b. 100°C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
©2007 Fairchild Semiconductor Corporation FDZ4670 Rev.D
2
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FDZ4670 N-Channel PowerTrench®MOSFET BGA
Typical Characteristics TJ = 25°C unless otherwise noted
60
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V
4.5
VGS = 6V VGS = 4.5V VGS = 3.5V VGS = 3V
50
ID, DRAIN CURRENT (A)
4.0 3.5 3.0 2.5 2.0 1.5 1.0
VGS = 3V
PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX
40 30 20 10 0 0.0
VGS = 3.5V
VGS = 4.5V
VGS = 6V
PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX
VGS = 10V
0.5 0 10 20 30 40 50 60
ID, DRAIN CURRENT(A)
0.2
0.4
0.6
0.8
1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
10
SOURCE ON-RESISTANCE (mΩ)
1.5
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.4 1.3
ID = 25A VGS = 10V
9 8 7 6 5 4 3 2 1 2
ID = 25A
PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX
1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150
rDS(on), DRAIN TO
TJ = 125oC
TJ = 25oC
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance vs Junction Temperature
60
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
60
50
ID, DRAIN CURRENT (A)
PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX
VGS = 0V
10
TJ = 125oC TJ = 25oC
VDS = 5V
40 30 20 10
TJ = -55oC TJ = 125oC
1
0.1
TJ = 25oC
0.01
TJ = -55oC
0 1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
©2007 Fairchild Semiconductor Corporation FDZ4670 Rev.D
3
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FDZ4670 N-Channel PowerTrench®MOSFET BGA
Typical Characteristics TJ = 25°C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE(V) ID = 25A
8000
VDD = 10V VDD = 15V
8 6 4 2 0 0 5 10 15
Ciss
CAPACITANCE (pF)
1000
Coss
VDD = 20V
Crss
f = 1MHz VGS = 0V
20
25
30
35
40
45
100 0.1
1
10
30
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
2000 1000
100
P(PK), PEAK TRANSIENT POWER (W) 1ms
ID, DRAIN CURRENT (A)
VGS = 10V
10
10ms
SINGLE PULSE RθJA = 100oC/W TA = 25oC
100
1
THIS AREA IS LIMITED BY rDS(on)
100ms 1s 10s DC
0.1
SINGLE PULSE TJ = MAX RATED RθJA = 100 C/W TA = 25oC
o
10
0.01 0.01
0.1
1
10
100
1 -3 10
10
-2
10
-1
10
0
10
1
10
2
10
3
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 9. Forward Bias Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
2
1
NORMALIZED THERMAL IMPEDANCE, ZθJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA
0 1 2 3
SINGLE PULSE RθJA = 100 C/W
o
0.01 -3 10
10
-2
10
-1
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation FDZ4670 Rev.D
4
www.fairchildsemi.com
FDZ4670 N-Channel PowerTrench®MOSFET BGA
Dimensional Outline and Pad Layout
©2007 Fairchild Semiconductor Corporation FDZ4670 Rev.D
5
www.fairchildsemi.com
FDZ4670 N-Channel PowerTrench®MOSFET BGA
tm
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. Around the world™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ DOME™ E2CMOS™ EcoSPARK® EnSigna™ FACT Quiet Series™ FACT® FAST® FASTr™ FPS™ FRFET® GlobalOptoisolator™ GTO™ HiSeC™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ MICROCOUPLER™ MicroPak™ MICROWIRE™ Motion-SPM™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR® PACMAN™ PDP-SPM™ POP™ Power220® Power247® PowerEdge™ PowerSaver™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ ScalarPump™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ The Power Franchise® ™ TinyBoost™
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As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I27
©2007 Fairchild Semiconductor Corporation FDZ4670 Rev.D www.fairchildsemi.com