FGH20N60SFD

FGH20N60SFD 600V, 20A Field Stop IGBT September 2008 FGH20N60SFD 600V, 20A Field Stop IGBT Features • High current capability • Low saturation voltage: VCE(sat) =2.2V @ IC = 20A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Applications • Induction Heating, UPS, SMPS, PFC E C G C G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 2 5o C o Ratings 600 ± 20 40 20 60 165 66 -55 to +150 -55 to +150 300 Units V V A A A W W oC o o @ TC = 2 5o C @ TC = 100 C C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 0.76 2.51 40 Units o o o C /W C /W C /W ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGH20N60SFD Rev. A FGH20N60SFD 600V, 20A Field Stop IGBT Package Marking and Ordering Information Device Marking FGH20N60SFD Device FGH20N60SFDTU Package TO-247 Packaging Type Tube Max Qty Qty per Tube 30ea per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ∆BVCES ∆TJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 - 0.6 - 250 ±400 V V/oC µA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250µA, VCE = VGE IC = 20A, VGE = 15V IC = 20A, VGE = 15V, TC = 125oC 4.0 5.0 2.2 2.4 6.5 2.8 V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 940 110 40 pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 20A, VGE = 15V VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC 13 16 90 24 0.37 0.16 0.53 12 16 95 28 0.4 0.28 0.69 65 7 33 48 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC FGH20N60SFD Rev. A 2 www.fairchildsemi.com FGH20N60SFD 600V, 20A Field Stop IGBT Electrical Characteristics of the Diode Symbol VFM trr Qrr TC = 25°C unless otherwise noted Parameter Diode Forward Voltage IF = 10A Test Conditions TC = 25oC TC = 125oC TC = 25oC IES =10A, dIES/dt = 200A/µs TC = 125 C TC = 25oC TC = 125 C o o Min. - Typ. 1.9 1.7 34 57 41 96 Max 2.5 - Units V Diode Reverse Recovery Time ns Diode Reverse Recovery Charge nC FGH20N60SFD Rev. A 3 www.fairchildsemi.com FGH20N60SFD 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 60 TC = 25 C o Figure 2. Typical Output Characteristics 60 TC = 125 C o 20V 15V 12V 10V 20V 15V 12V 10V Collector Current, IC [A] 40 Collector Current, IC [A] 40 20 VGE = 8V 20 VGE = 8V 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 Figure 3. Typical Saturation Voltage Characteristics 60 Common Emitter VGE = 15V Figure 4. Transfer Characteristics 60 Common Emitter VCE = 20V Collector Current, IC [A] TC = 25 C Collector Current, IC [A] o TC = 25 C TC = 125 C o o 40 TC = 125 C o 40 20 20 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 0 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4 Common Emitter VGE = 15V Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = -40 C o Collector-Emitter Voltage, VCE [V] 16 40A 3 12 20A 2 IC = 10A 8 40A 4 20A IC = 10A 1 25 50 75 100 125 o Collector-Emitter Case Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGH20N60SFD Rev. A 4 www.fairchildsemi.com FGH20N60SFD 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25 C o Figure 8. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C o 16 Collector-Emitter Voltage, VCE [V] 16 12 12 8 40A 8 20A 40A IC = 10A 4 20A IC = 10A 4 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 9. Capacitance Characteristics 2500 Common Emitter VGE = 0V, f = 1MHz Figure 10. Gate charge Characteristics 15 Common Emitter TC = 25 C o 2000 Capacitance [pF] Cies TC = 25 C o Gate-Emitter Voltage, VGE [V] 12 300V VCC = 100V 200V 1500 9 1000 Coes 6 500 Cres 3 0 0.1 0 1 10 Collector-Emitter Voltage, VCE [V] 30 0 20 40 60 Gate Charge, Qg [nC] 80 Figure 11. SOA Characteristics 100 10µs 100µs 1ms 10 ms Figure 12. Turn-on Characteristics vs. Gate Resistance 100 Collector Current, Ic [A] 10 1 Switching Time [ns] DC tr Common Emitter VCC = 400V, VGE = 15V IC = 20A TC = 25 C TC = 125 C o o 0.1 Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 10 td(on) 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 5 0 10 20 30 40 Gate Resistance, RG [Ω] 50 60 FGH20N60SFD Rev. A 5 www.fairchildsemi.com FGH20N60SFD 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance 1000 Common Emitter VCC = 400V, VGE = 15V IC = 20A Figure 14. Turn-on Characteristics vs. Collector Current 200 Common Emitter VGE = 15V, RG = 10Ω 100 td(off) TC = 25 C TC = 125 C o o Switching Time [ns] TC = 125 C o Switching Time [ns] TC = 25 C o 100 tr tf 10 td(on) 10 0 10 20 30 40 50 60 Gate Resistance, RG [Ω] 3 0 10 20 30 40 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current 300 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C o o Figure 16. Switching Loss vs. Gate Resistance 3 Common Emitter VCC = 400V, VGE = 15V IC = 20A TC = 25 C TC = 125 C Eon o o Switching Loss [mJ] Switching Time [ns] TC = 125 C 1 100 td(off) Eoff tf 10 0 10 20 30 40 Collector Current, IC [A] 0.1 0 10 20 30 40 Gate Resistance, RG [Ω] 50 60 Figure 17. Switching Loss vs. Collector Current 10 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C o o Figure 18. Turn off Switching SOA Characteristics 80 Switching Loss [mJ] TC = 125 C 1 Eon Collector Current, IC [A] 10 Eoff 0.1 Safe Operating Area 0.02 0 10 20 30 40 Collector Current, IC [A] 1 1 VGE = 15V, TC = 125 C o 10 100 1000 Collector-Emitter Voltage, VCE [V] FGH20N60SFD Rev. A 6 www.fairchildsemi.com FGH20N60SFD 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics 40 TJ = 125 C o Figure 20. Reverse Current 100 TJ = 25 C o Reverse Current , IR [µA] Forward Current, IF [A] 10 TJ = 75 C o 10 TC = 125 C o 1 TC = 75 C o 1 0.1 o 0.01 TC = 25 C 0.1 0 1 2 3 Forward Voltage, VF [V] 4 1E-3 0 100 200 300 400 Reverse Voltage, VR [V] 500 600 Figure 21. Stored Charge 60 Stored Recovery Charge, Qrr [nC] Reverse Recovery Time, trr [ns] Figure 22. Reverse Recovery Time 60 50 200A/µs 50 di/dt = 100A/µs 40 40 200A/µs 30 di/dt = 100A/µs 30 20 20 10 0 5 10 15 20 Forward Current, IF [A] 10 0 5 10 15 20 Forward Current, IF [A] Figure 23.Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.2 0.1 0.01 0.1 0.05 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGH20N60SFD Rev. A 7 www.fairchildsemi.com FGH20N60SFD 600V, 20A Field Stop IGBT Mechanical Dimensions TO247AB (FKS PKG CODE 001) FGH20N60SFD Rev. A 8 www.fairchildsemi.com FGH20N60SFD 600V, 20A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FGH20N60SFD Rev. A 9 www.fairchildsemi.com