FJV1845
FJV1845
Amplifier Transistor
• Complement to FJV992
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Value 120 120 5 50 10 300 150 -55 ~ 150 Units V V V mA mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VBE (on) VCE (sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB=120V, IE=0 VEB=5V, IC=0 VCE=6V, IC=0.1mA VCE=6V, IC=1mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCB=30V, IE=0, f=1MHz 50 150 200 0.55 580 600 0.59 0.07 110 1.6 2.5 Min. Typ. Max. 50 50 1200 0.65 0.3 V V MHz pF Units nA nA
hFE2 Classification
Classification hFE2 P 200 ~ 400 Marking F 300 ~ 600 E 400 ~ 800 U 600 ~ 1200
6E
hFE Classification
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
FJV1845
Typical Characteristics
10
IB=16µA IB=14µA
1.0
IB=1.4µA
IB=1.2µA IB=1.0µA IB=0.8µA IB=0.6µA
IC[mA], COLLECTOR CURRENT
8
IB=12µA IB=10µA IB=8µA
4
6
IC[mA], COLLECTOR CURRENT
0.8
0.6
IB=6µA IB=4µA
0.4
IB=0.4µA
2
IB=2µA
0.2
IB=0.2µA
0 0 1 2 3 4 5
0.0 0 20 40 60 80 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000 900 800
VCE = 6V Pule Test
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
100
IC=10IB Pulse Test
10
hFE, DC CURRENT GAIN
700 600 500 400 300 200 100 0 0.01
1
VBE(sat)
0.1
VCE(sat)
0.1
1
10
100
0.01 0.1
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
10
10k
IE=0
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
f=1MHz
VCE=6V
Cob[pF], CAPACITANCE
1k
1
100
0.1 1 10 100
10 0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
IE[mA], EMITTER CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
FJV1845
Typical Characteristics (Continued)
100
500
IC[mA], COLLECTOR CURRENT
10
PC[mW], POWER DISSIPATION
0.9
VCE = 6V Pulse Test
400
300
1
200
0.1
100
0.01 0.4
0.5
0.6
0.7
0.8
0 0 25 50
o
75
100
125
150
175
VBE[V], BASE-EMITTER VOLTAGE
Ta[ C], CASE TEMPERATURE
Figure 7. Collector Current vs. Base-Emitter Voltage
Figure 8. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
FJV1845
Package Dimensions
SOT-23
0.20 MIN 2.40
±0.10
0.40 ±0.03
1.30
±0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 ±0.03 0.96~1.14 2.90 ±0.10
0.12 –0.023
+0.05
0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF
0.97REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER
ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™
PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™
SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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