FMC7G15US60

FMC7G15US60 October 2001 IGBT FMC7G15US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • • UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 15A High input impedance Built in brake and 3 phase rectifier circuit Fast & soft anti-parallel FWD R B S U T V W EU EV EW Package Code : 21PM-AA P P1 GU GV GW Applications • • • • AC & DC motor controls General purpose inverters Robotics Servo controls GB N E -GU -GV -GW Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TSC VRRM IO IFSM I2t TJ Common TSTG VISO Mounting Torque TC = 25°C unless otherwise noted Inverter & Brake Converter Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 25°C Pulsed Collector Current Diode Continuous Forward Current @ TC = 100°C Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25°C Short Circuit Withstand Time @ TC = 100°C Repetitive Peak Reverse Voltage Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive 1 Cycle Surge Current Operating Junction Temperature Storage Temperature Range Isolation Voltage Mounting part Screw @ AC 1minute @ M4 FMC7G15US60 600 ± 20 15 30 15 30 45 10 1200 20 200 164 -40 to +150 -40 to +125 2500 1.25 Units V V A A A A W us V A A A2s °C °C V N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2001 Fairchild Semiconductor Corporation FMC7G15US60 Rev. A1 FMC7G15US60 Electrical Characteristics of the IGBT @ Inverter & Brake T Symbol Parameter Test Conditions C = 25°C unless otherwise noted Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 15mA, VCE = VGE IC = 15A, VGE = 15V 5.0 -6.0 2.2 8.5 2.8 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---948 101 33 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge --------------10 ---17 33 44 118 0.32 0.36 0.68 20 34 48 212 0.34 0.7 1.04 -42 7 17 --65 200 --0.95 --70 350 --1.45 -60 10 24 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC VCC = 300 V, IC = 15A, RG = 13Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 15A, RG = 13Ω, VGE = 15V, Inductive Load, TC = 125°C @ TC = VCC = 300 V, VGE = 15V 100°C VCE = 300 V, IC = 15A, VGE = 15V ©2001 Fairchild Semiconductor Corporation FMC7G15US60 Rev. A1 FMC7G15US60 Electrical Characteristics of the DIODE @ Inverter & Brake T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge IF = 15A di / dt = 30 A/us Test Conditions T C = 2 5° C IF = 15A TC = 100°C T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C C = 25°C unless otherwise noted Min. --------- Typ. 1.9 2.0 75 100 1.0 1.3 40 70 Max. 2.8 -130 -1.8 -100 -- Units V ns A nC Electrical Characteristics of the DIODE @ Converter T Symbol VFM IRRM Parameter Diode Forward Voltage Repetitive Reverse Current C = 25°C unless otherwise noted Test Conditions T C = 2 5° C IF = 20A TC = 100°C VR = VRRM T C = 2 5° C TC = 100°C Min. ----- Typ. 1.1 1.0 -5 Max. 1.5 -8 -- Units V mA Thermal Characteristics Inverter Brake Converter Weight Symbol RθJC RθJC RθJC RθJC RθJC Parameter Junction-to-Case (IGBT Part, per 1/6 Module) Junction-to-Case (DIODE Part, per 1/6 Module) Junction-to-Case (IGBT Part) Junction-to-Case (DIODE Part) Junction-to-Case (DIODE Part, per 1/6 Module) Weight of Module Typ. -----60 Max. 2.77 3.5 2.77 3.5 2.7 -Units °C/W °C/W °C/W °C/W °C/W g ©2001 Fairchild Semiconductor Corporation FMC7G15US60 Rev. A1 FMC7G15US60 50 45 40 Common Emitter T C = 25℃ 20V 45 15V 12V 40 Common Emitter VGE = 15V TC = 25℃ ━━ TC = 125℃ ------ Collector Current, IC [A] 8 35 30 25 20 15 10 5 0 Collector Current, IC [A] 35 30 25 20 15 10 5 0 0 2 4 6 VGE = 10V 1 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4.0 24 Common Emitter V GE = 15V Collector - Emitter Voltage, VC E [V] V CC = 3 00V Load Current : peak of square wave 3.5 30A 20 3.0 Load Current [A] 16 2.5 15A 2.0 I C = 8A 1.5 12 8 4 1.0 -50 0 50 100 150 0 Duty cycle : 50% T C = 1 00 ℃ Power Dissipation = 25W 0.1 1 10 100 1000 Case Temperature, T C [℃ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 25 ℃ 20 Common Emitter T C = 1 25℃ 16 Collector - Emitter Voltage, V C E [V] 16 12 Collector - Emitter Voltage, V CE [V] 12 8 8 30A 4 IC = 7 A 0 15A 30A 4 I C = 7A 0 0 4 8 12 16 20 15A 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, V GE [ V] Fig 5. Saturation Voltage vs. VGE ©2001 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE FMC7G15US60 Rev. A1 FMC7G15US60 1800 1500 Common Emitter VGE = 0V, f = 1MHz T C = 2 5℃ Cies Capacitance [pF] Common Emitter V CC = 300V, V GE = ± 15V IC = 15A T C = 25℃ ━━ T C = 125℃ ------ Ton 1200 Switching Time [ns] 100 Tr 900 Coes 600 Cres 300 0 1 10 10 1 10 100 Collector - Emitter Voltage, VCE [V] Gate Resistance, R G [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Switching Time [ns] Common Emitter V CC = 3 00V, VGE = ± 15V IC = 1 5A T C = 2 5℃ ━━ T C = 1 25℃ ------ Common Emitter V CC = 300V, VGE = ± 15V IC = 15A T C = 2 5℃ ━━ T C = 125 ℃ ------ Switching Loss [uJ] Toff 1000 Eoff Eon Eoff Toff Tf Tf 100 100 1 10 100 1 10 100 Gate Resistance, R G [Ω ] Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter V GE = ± 15V, RG = 13 Ω T C = 2 5 ℃ ━━ T C = 125 ℃ -----Common Emitter V GE = ± 15V, RG = 13Ω T C = 25 ℃ ━━ T C = 125 ℃ ------ Switching Time [ns] Ton 100 Switching Time [ns] Tr Toff Tf Toff 100 Tf 10 5 10 15 20 25 30 5 10 15 20 25 30 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2001 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current FMC7G15US60 Rev. A1 FMC7G15US60 15 Common Emitter V GE = ± 15V, RG = 1 3 Ω T C = 25 ℃ ━━ T C = 1 25 ℃ ------ Gate - Emitter Voltage, VGE [ V ] 12 Common Emitter R L = 20 Ω T C = 25 ℃ VCC = 100 V 300 V Switching Loss [uJ] Eoff 1000 Eoff 9 200 V 6 Eon 3 100 5 10 15 20 25 30 0 0 10 20 30 40 50 Collector Current, IC [A] Gate Charge, Q g [ n C ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 100 IC M AX. (Pulsed) 50us 50 Collector Current, I C [A] 100us 1㎳ Collector Current, IC [A] 10 IC M AX. (Continuous) 10 1 DC Operation 0.1 Single Nonrepetitive Pulse TC = 25 ℃ Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 Safe Operating Area VGE = 2 0V, T C = 1 00 ℃ 1 1 10 100 1000 0.01 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 50 10 Collector Current, I C [A] 10 Thermal Response, Zthjc [℃/W] 1 1 0.1 0.1 0 Single Nonrepetitive Pulse TJ ≤ 1 25 ℃ V GE = 1 5V R G = 13 Ω 100 200 300 400 500 600 700 0.01 10 -5 IGBT : DIODE : 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Collector-Emitter Voltage, V CE [V] Rectangular Pulse Duration [sec] Fig 17. RBSOA Characteristics ©2001 Fairchild Semiconductor Corporation Fig 18. Transient Thermal Impedance FMC7G15US60 Rev. A1 FMC7G15US60 50 20 Peak Reverse Recovery Current, Ir r [A] Reverse Recovery Time, T r r [x10ns] 40 Common Cathode V GE = 0 V T C = 25 ℃ T C = 1 25 ℃ 10 T rr F [A] Forward Current, I 30 1 Irr 20 10 Common Cathode di/dt = 30A/㎲ T C = 2 5℃ TC = 100℃ 0.1 4 8 12 16 0 0 1 2 3 4 Forward Voltage, V F [V] Forward Current, IF [A] Fig 19. Forward Characteristics Fig 20. Reverse Recovery Characteristics ©2001 Fairchild Semiconductor Corporation FMC7G15US60 Rev. A1 FMC7G15US60 Package Dimension 21PM-AA (FS PKG CODE BJ) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation FMC7G15US60 Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H4