FQP19N20C

FQP19N20C/FQPF19N20C QFET FQP19N20C/FQPF19N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. ® Features • • • • • • 19.0A, 200V, RDS(on) = 0.17Ω @VGS = 10 V Low gate charge ( typical 40.5 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ● ◀ G GDS ▲ ● ● TO-220 FQP Series GD S TO-220F FQPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP19N20C 19.0 12.1 76.0 FQPF19N20C 200 19.0 * 12.1 * 76.0 * ± 30 433 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 2) (Note 1) (Note 1) (Note 3) 19.0 13.9 5.5 139 1.11 -55 to +150 300 43 0.34 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC RθJS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP19N20C 0.9 0.5 62.5 FQPF19N20C 2.89 -62.5 Units °C/W °C/W °C/W ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP19N20C/FQPF19N20C Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 200 ------0.24 ------10 100 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 9.5 A VDS = 40 V, ID = 9.5 A (Note 4) 2.0 --- -0.14 10.8 4.0 0.17 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---830 195 85 1080 255 110 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 160 V, ID = 19.0 A, VGS = 10 V (Note 4, 5) VDD = 100 V, ID = 19.0 A, RG = 25 Ω (Note 4, 5) -------- 15 150 135 115 40.5 6.0 22.5 40 310 280 240 53.0 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 19.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 19.0 A, dIF / dt = 100 A/µs (Note 4) ------ ---208 1.63 19.0 76.0 1.5 --- A A V ns µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.8mH, IAS = 19.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 19.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP19N20C/FQPF19N20C Typical Characteristics ID, Drain Current [A] ID, Drain Current [A] 10 1 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 10 1 150 C o 25 C 10 0 o -55 C o 10 0 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ -1 10 10 0 10 1 10 -1 ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.8 RDS(ON) [Ω ], Drain-Source On-Resistance 0.6 IDR, Reverse Drain Current [A] 10 1 0.4 VGS = 10V 10 0 150℃ 0.2 VGS = 20V ※ Note : TJ = 25℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 0.0 0 10 20 30 40 50 60 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 3000 2500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 VGS, Gate-Source Voltage [V] 10 VDS = 40V VDS = 100V VDS = 160V Capacitance [pF] 2000 8 Ciss 1500 Coss Crss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 0 1 6 1000 4 500 2 ※ Note : ID = 19.0A 0 -1 10 10 10 0 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP19N20C/FQPF19N20C Typical Characteristics (Continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 9.5 A 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 10 2 10 2 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 1 ms 10 1 ID, Drain Current [A] 100 µs 10 µs 100 µs 10 1 10 ms DC 1 ms 10 ms DC 10 0 ※ Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 0 ※ Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP19N20C Figure 9-2. Maximum Safe Operating Area for FQPF19N20C 20 15 ID, Drain Current [A] 10 5 0 25 50 75 100 125 150 TC, Case Temperature [℃] Figure 10. Maximum Drain Current vs Case Temperature ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP19N20C/FQPF19N20C Typical Characteristics (Continued) 10 0 ZθJC(t), Thermal Response D = 0 .5 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 ※ N o te s : 1 . Z θ J C ( t) = 0 . 9 0 ℃ /W M a x . 2 . D u t y F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) PDM s in g le p u ls e t1 10 -2 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-1. Transient Thermal Response Curve for FQP19N20C ZθJC(t), Thermal Response D = 0 .5 10 0 0 .2 0 .1 0 .0 5 10 -1 ※ N o te s : 1 . Z θ J C ( t) = 2 .8 9 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .0 2 0 .0 1 s in g le p u ls e PDM t1 t2 0 1 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 10 t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF19N20C ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP19N20C/FQPF19N20C Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS 10V Qgs Qg VGS Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG VGS RL VDD VDS 90% 10V DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG 10V tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD tp DUT VDS (t) Time ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP19N20C/FQPF19N20C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP19N20C/FQPF19N20C Package Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQP19N20C/FQPF19N20C Package Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 15.87 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet series™ ACEx™ FAST® ActiveArray™ Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ HiSeC™ E2CMOS™ EnSigna™ I2C™ FACT™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design First Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2004 Fairchild Semiconductor Corporation Rev. I8