FSB619

FSB619 Discrete Power & Signal Technologies July 1998 FSB619 C E B SuperSOT -3 (SOT-23) TM NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted FSB619 50 50 5 2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Max Characteristic FSB619 PD RθJA Total Device Dissipation* Derate above 25°C Thermal Resistance, Junction to Ambient 500 4 250 mW mW/°C °C/W Units © 1998 Fairchild Semiconductor Corporation Page 1 of 2 FSB619 *Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in2 of 2oz copper. NPN Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO IEBO ICES Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current IC = 10 mA IC = 100 µA IE = 100 µA VCB = 40 V VEB = 4V VCES = 40 V 50 50 5 100 100 100 V V V nA nA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 10 mA, VCE = 2V IC = 200 mA, VCE = 2V IC = 1A, VCE = 2V IC = 2A, VCE = 2V VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA IC = 1 A, IB = 10 mA IC = 2 A, IB = 50 mA VBE(sat) VBE(on) Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = 2 A, IB = 50 mA IC = 2 A, VCE = 2 V 200 300 200 100 20 235 320 1 1 V V mV - SMALL SIGNAL CHARACTERISTICS Cobo fT Output Capacitance Transition Frequency VCB = 10 V, IE = 0, f = 1MHz IC = 50 mA,VCE = 10 V, f=100MHz 100 30 pF - *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Page 2 of 2 fsb619.lwpPrNA 7/10/98 revC