FZT749

FZT749 Discrete Power & Signal Technologies July 1998 FZT749 C E B C SOT-223 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted FZT749 25 35 5 3 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Max Characteristic FZT749 PD RθJA Total Device Dissipation Thermal Resistance, Junction to Ambient 2 62.5 W °C/W Units © 1998 Fairchild Semiconductor Corporation Page 1 of 2 fzt749.lwpPrPC 7/10/98 revB FZT749 FZT749 FZT749 PNP Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA IC = 100 µA IE = 100 µA VCB = 30 V VCB = 30 V, TA=100°C IEBO Emitter Cutoff Current VEB = 4V 25 35 5 100 10 100 V V V nA uA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 50 mA, VCE = 2 V IC = 1 A, VCE = 2 V IC = 2 A, VCE = 2 V IC = 6 A, VCE = 2 V VCE(sat) Collector-Emitter Saturation Voltage IC = 1 A, IB = 100 mA IC = 3 A, IB = 300 mA VBE(sat) VBE(on) Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = 1 A, IB = 100 mA IC = 1 A, VCE = 2 V 70 100 75 15 300 600 1.25 1 V V mV 300 - SMALL SIGNAL CHARACTERISTICS Cobo fT Output Capacitance Transition Frequency VCB = 10 V, IE = 0, f = 1MHz IC = 100 mA,VCE = 5 V, f=100MHz 100 100 pF - *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Page 2 of 2 fzt749.lwpPrPC 7/10/98 revB