KSD1021_04

KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW 1 TO-92S 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 30 5 1 350 150 -55 ~ 150 Units V V V A mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Band Width Product Output Capacitance Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VCE=1V, IC=100mA IC=1A, IB=0.1A IC=1A, IB=0.1A VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz 130 16 120 Min. 40 30 5 0.1 400 0.5 1.2 V V MHz pF Typ. Max. Units V V V µA hFE Classification Classification hFE Y 120 ~ 240 G 200 ~ 400 ©2004 Fairchild Semiconductor Corporation Rev. B1, April 2004 KSD1021 Typical Characteristics 1.0 0.9 1000 VCE = 1V IB = 5.0mA IB = 4.5mA IB = 4.0mA IB = 3.5mA IB = 3.0mA IC[A], COLLECTOR CURRENT 0.8 0.7 0.6 hFE, DC CURRENT GAIN 9 10 100 IB = 2.5mA 0.5 IB = 2.0mA 0.4 IB = 1.5mA 0.3 0.2 10 IB = 1.0mA IB = 0.5mA 0.1 0.0 0 1 2 3 4 5 6 7 8 1 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 100 f=1MHz IE=0 1 VBE(sat) Cob[pF], CAPACITANCE 10 100 1000 10 0.1 VCE(sat) 0.01 1 1 1 10 100 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage : Figure 4. Collector Output Capacitance 1000 500 VCE = 6V fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 450 PC[mW], POWER DISSIPATION -1 -10 -100 -1000 400 350 300 250 200 150 100 50 0 0 25 50 o 100 10 1 75 100 125 150 175 200 225 250 IC[mA], COLLECTOR CURRENT Ta[ C], AMBIENT TEMPERATURE Figure 5. Current Gain Bandwidth Product Figure 6. Power Derating ©2004 Fairchild Semiconductor Corporation Rev. B1, April 2004 KSD1021 Package Dimensions TO-92S 4.00 ±0.20 2.31 ±0.20 0.66 MAX. (1.10) 0.49 ±0.10 1.27TYP [1.27±0.20] 3.72 ±0.20 1.27TYP [1.27±0.20] 14.47 ±0.30 3.70 ±0.20 0.35 –0.05 +0.10 2.86 ±0.20 0.77 ±0.10 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. B1, April 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2004 Fairchild Semiconductor Corporation Rev. I10