KSD1691

KSD1691 KSD1691 Feature • Low Collector-Emtter Saturation Voltage & Large Collector Current • High Power Dissipation: PC = 1.3W (Ta=25°C) • Complementary to KSB1151 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 60 60 7 5 8 1 1.3 20 150 - 55 ~ 150 Units V V V A A A W W °C °C * PW≤10ms, duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current *DC Current Gain Test Condition VCB = 50V, IE = 0 VEB = 7V, IC = 0 VCE = 1V, IC = 0.1A VCE = 1V, IC = 2A VCE = 1V, IC = 5A IC = 2A, IB = 0.2A IC = 2A, IB = 0.2A VCC = 10V, IC = 2A IB1 = - IB2 = 0.2A RL = 5Ω 60 100 50 0.1 0.9 0.2 1.1 0.2 Min. Typ. Max. 10 10 400 0.3 1.2 1 2.5 1 V V µs µs µs Units µA µA *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time * Pulse test: PW≤50µs, duty Cycle≤2% Pulsed hFE Classificntion Classification hFE 2 O 100 ~ 200 Y 160 ~ 320 G 200 ~ 400 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1691 Typical Characteristics 10 1000 Ic[A], COLLECTOR CURRENT IB = 20 IB = 0mA 15 0m A 8 IB = 60mA hFE, DC CURRENT GAIN 00m IB = 1 A VCE = 2 V IB = 80mA 100 V CE = 1 V 6 0 mA IB = 4 = 30mA IB 4 IB = 20mA 10 IB = 10mA 2 IB = 0 0 0.4 0.8 1.2 1.6 2.0 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 10 Ic = 10 IB Ic(Pulse)MAX 2m S IC[A], COLLECTOR CURRENT Ic(DC)MAX 10 S m D is 20 m S Li 0m o n ti pa si 1 V BE(sat) ite 1 d b s/ 0.1 0.01 0.1 1 10 0.1 1 10 VCEO(MAX) 100 ite m Li d V CE (s a t) IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Forward Bias Safe Operating Area 10 160 140 IC[A], COLLECTOR CURRENT 8 120 dT[%], Ic DERATING 100 6 80 s/b DI LIM 4 60 ITE D TI O VCEO(SUS) SS IP A 40 2 N LI 20 M IT ED 0 20 40 60 80 100 0 0 25 50 o 75 100 125 150 175 200 V CE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Reverse Bias Safe Operating Area Figure 6. Derating Curve of Safe Operating Areas ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1691 Typical Characteristics (Continued) 30 25 PC[W], POWER DISSIPATION 20 15 10 5 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1691 Package Demensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 ±0.30 (0.50) 1.75 ±0.20 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ DISCLAIMER HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2000 Fairchild Semiconductor International Rev. E