RMPA2265

RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz September 2005 RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Features ■ Single positive-supply operation and low power and shutdown modes ■ 42% WCDMA efficiency at +28 dBm average output power 1920–1980 MHz ■ 39% WCDMA efficiency at 27.5 dBm average output power 1850–1910 MHz ■ Meets UMTS/WCDMA performance requirements in both UMTS bands ■ Meets HSDPA performance requirements ■ Compact Lead-free compliant LCC package– (3.0 x 3.0 x 1.0 mm nominal) ■ Internally matched to 50 Ohms and DC blocked RF input/output General Description The RMPA2265 power amplifier module (PAM) is designed for WCDMA/HSDPA applications in both the 1850–1910 and 1920– 1980 MHz bands. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using Fairchild’s InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process. Device Functional Block Diagram (Top View) Vcc1 1 Input Match MMIC 8 Output Match Vcc2 RF IN 2 7 RF OUT Vmode 3 DC Bias Control 6 GND Vref 4 5 GND (paddle ground on package bottom) ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com RMPA2265 Rev. K RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Absolute Ratings 1 Symbol VCC1, VCC2 Vref Vmode PIN TSTG Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature Parameter Ratings 5.0 2.6 to 3.5 3.5 +10 -55 to +150 Units V V V dBm °C Note: 1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics (1920 to 1980 MHz)1 Symbol f WCDMA Operation Gp Po PAEd Power Gain Linear Output Power PAEd (digital) @ +28dBm PAEd (digital) @ +16dBm PAEd (digital) @ +16dBm Itot High Power Total Current Low Power Total Current Adjacent Channel Leakage Ratio ACLR1 ACLR2 ±5.00MHz Offset 1920–1980MHz ±10.00MHz Offset 1920–1980MHz -40 -42 -54 -66 dBc dBc dBc dBc 26 28 16 42 9 25 440 120 28 26 dB dB dBm dBm % % % mA mA Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode ≥ 2.0V Vmode = 0V Vmode ≥ 2.0V Vmode = 0V Vmode ≥ 2.0V Vmode ≥ 2.0V, Vcc = 1.4V Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode ≥ 2.0V WCDMA Modulation 3GPP 3.2 03-00 DPCCH+1 DCDCH Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode ≥ 2.0V Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode ≥ 2.0V Parameter Operating Frequency Min 1920 Typ Max 1980 Units MHz Comments General Characteristics VSWR NF Rx No 2fo – 5fo S Input Impedance Noise Figure Receive Band Noise Power Harmonic Suppression3 Spurious Outputs2, 3 Ruggedness with Load Mismatch3 Tc Case Operating Temperature -30 2.0:1 4 -142 -50 -60 10:1 85 °C Vmode ≥ 2.0V Po ≤ +28dBm No applied RF signal dB dBm/ Hz dBc dBc Po ≤ +28dBm, 2110 to 2170MHz Po ≤ +28dBm Load VSWR ≤ 5.0:1 No permanent damage DC Characteristics Iccq Iref Icc(off) Quiescent Current Reference Current Shutdown Leakage Current 45 5 1 5 mA mA µA Notes: 1. All parameters met at TC = +25°C, VCC = +3.4V, Vref = 2.85V and load VSWR ≤ 1.2:1, unless otherwise noted. 2. All phase angles. 3. Guaranteed by design. 2 RMPA2265 Rev. K www.fairchildsemi.com RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Electrical Characteristics (1850 to 1910 MHz)1 Symbol f WCDMA Operation Gp Po PAEd Power Gain Linear Output Power PAEd (digital) @ +27.5dBm PAEd (digital) @ +16dBm PAEd (digital) @ +16dBm Itot High Power Total Current Low Power Total Current Adjacent Channel Leakage Ratio ACLR1 ACLR2 ±5.00MHz Offset 1850–1910MHz ±10.00MHz Offset 1850–1910MHz -40 -42 -54 -66 dBc dBc dBc dBc 26 27.5 16 39 9 25 420 120 28 26 dB dB dBm dBm % % % mA mA Po = +27.5dBm, Vmode = 0V Po = +16dBm, Vmode ≥ 2.0V Vmode = 0V Vmode ≥ 2.0V Vmode = 0V Vmode ≥ 2.0V Vmode ≥ 2.0V, Vcc = 1.4V Po = +27.5dBm, Vmode = 0V Po = +16dBm, Vmode ≥ 2.0V WCDMA Modulation 3GPP 3.2 03-00 DPCCH+1 DCDCH Po = +27.5dBm, Vmode = 0V Po = +16dBm, Vmode ≥ 2.0V Po = +27.5dBm, Vmode = 0V Po = +16dBm, Vmode ≥ 2.0V Parameter Operating Frequency Min 1850 Typ Max 1910 Units MHz Comments General Characteristics VSWR NF Rx No 2fo – 5fo S Tc Input Impedance Noise Figure Receive Band Noise Power Harmonic Suppression3 Spurious Outputs2, 3 Ruggedness with Load Mismatch3 Case Operating Temperature -30 DC Characteristics Iccq Iref Icc(off) Quiescent Current Reference Current Shutdown Leakage Current 45 5 1 5 mA mA µA Vmode ≥ 2.0V Po ≤ +27.5dBm No applied RF signal 2.0:1 4 -139 -50 -60 10:1 85 °C dB dBm/Hz Po ≤ +27.5dBm, 1930 to 1990MHz dBc dBc Po ≤ +27.5dBm Load VSWR ≤ 5.0:1 No permanent damage Notes: 1. All parameters met at TC = +25°C, VCC = +3.4V, Vref = 2.85V and load VSWR ≤ 1.2:1, unless otherwise noted. 2. All phase angles 3. Guaranteed by design Recommended Operating Conditions Symbol f VCC1, VCC2 Vref Supply Voltage Reference Voltage Operating Shutdown Bias Control Voltage Low-Power High-Power Linear Output Power (low-power) 1920–1980 MHz (high power) 1850–1910 MHz (high power) Case Operating Temperature -30 Parameter Operating Frequency Min 1850 3.0 2.7 0 1.8 0 Typ 3.4 2.85 Max 1980 4.2 3.1 0.5 3.0 0.5 +16 +28 +27.5 +85 Units MHz V V V V V dBm dBm dBm °C Vmode 2.0 POUT TC 3 RMPA2265 Rev. K www.fairchildsemi.com RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Performance Data (1920-1980MHz) High Power Mode (Vcc = 3.4V, Vref = 2.85V, Vmode = 0V) Frequency Dependency (Pout = 28dBm) RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Pout = 28dBm 32 31 30 29 28 27 26 25 24 23 22 1920 RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Pout = 28dBm 47 46 45 44 43 42 41 40 39 38 37 1920 Gain (dB) 1950 Frequency (MHz) 1980 PAE (%) 1950 Frequency (MHz) 1980 RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Pout = 28dBm -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 1920 RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Pout = 28dBm -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 1920 ACLR1 (dBc) ACLR2 (dBc) 1950 Frequency (MHz) 1980 1950 Frequency (MHz) 1980 Pout Dependency (Frequency = 1950MHz) RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Freq = 1950MHz 32 31 30 29 28 27 26 25 24 23 22 0 4 8 12 16 20 24 28 Pout (dBm) RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Freq = 1950MHz 50 45 40 35 30 25 20 15 10 5 0 0 4 8 12 16 20 24 28 Pout (dBm) Gain (dB) RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Freq = 1950MHz -30 -35 -40 ACLR1 (dBc) -45 -50 -55 -60 -65 -70 0 4 8 12 16 20 24 28 Pout (dBm) RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Freq = 1950MHz -50 -52 -54 -56 -58 -60 -62 -64 -66 -68 -70 0 4 8 12 16 20 24 28 Pout (dBm) 4 RMPA2265 Rev. K ACLR2 (dBc) PAE (%) www.fairchildsemi.com RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Performance Data (1920-1980MHz) Low Power Mode (Vcc = 3.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm) RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm 32 31 30 29 28 27 26 25 24 23 22 1920 RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 2V, Pout =16dBm 15 14 13 12 11 10 9 8 7 6 5 1920 Gain (dB) 1950 Frequency (MHz) 1980 PAE (%) 1950 Frequency (MHz) 1980 RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm -35 -37 -39 -41 -43 -45 -47 -49 -51 -53 -55 1920 RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm -55 -57 -59 -61 -63 -65 -67 -69 -71 -73 -75 1920 ACLR1 (dBc) ACLR2 (dBc) 1950 Frequency (MHz) 1980 1950 Frequency (MHz) 1980 Low Power Mode (Vcc = 1.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm) RMPA2265 3x3 WCDMA PAM Vcc = 1.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm 30 29 28 27 26 25 24 23 22 21 20 1920 RMPA2265 3x3 WCDMA PAM Vcc = 1.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm 25 24 23 22 21 20 19 18 17 16 15 1920 Gain (dB) PAE (%) 1950 Frequency (MHz) 1980 1950 Frequency (MHz) 1980 RMPA2265 3x3 WCDMA PAM Vcc = 1.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm -35 -37 -39 -41 -43 -45 -47 -49 -51 -53 -55 1920 RMPA2265 3x3 WCDMA PAM Vcc = 1.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm -50 -52 -54 -56 -58 -60 -62 -64 -66 -68 -70 1920 ACLR1 (dBc) ACLR2 (dBc) 1950 Frequency (MHz) 1980 1950 Frequency (MHz) 1980 5 RMPA2265 Rev. K www.fairchildsemi.com RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Performance Data (1850-1910MHz) High Power Mode (Vcc = 3.4V, Vref = 2.85V, Vmode = 0V) Frequency Dependency (Pout = 27.5dBm) RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Pout = 27.5dBm 32 31 30 29 28 27 26 25 24 23 22 1850 RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Pout = 27.5dBm 45 44 43 42 41 40 39 38 37 36 35 1850 Gain (dB) 1880 Frequency (MHz) 1910 PAE (%) 1880 Frequency (MHz) 1910 RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Pout = 27.5dBm -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 1850 RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Pout = 27.5dBm -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 1850 ACLR1 (dBc) ACLR2 (dBc) 1880 Frequency (MHz) 1910 1880 Frequency (MHz) 1910 Pout Dependency (Frequency = 1880MHz) RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Freq = 1880MHz 32 31 30 29 28 27 26 25 24 23 22 0 4 8 12 16 20 24 28 Pout (dBm) RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Freq = 1880MHz 50 45 40 35 30 25 20 15 10 5 0 0 4 8 12 16 20 24 28 Pout (dBm) Gain (dB) RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Freq = 1880MHz -30 ACLR1 (dBc) -35 -40 -45 -50 -55 -60 -65 -70 0 4 8 12 16 20 24 28 Pout (dBm) RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Freq = 1880MHz -40 ACLR2 (dBc) -45 -50 -55 -60 -65 -70 -75 -80 0 4 8 12 16 20 24 28 Pout (dBm) 6 RMPA2265 Rev. K PAE (%) www.fairchildsemi.com RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Performance Data (1850-1910MHz) Low Power Mode (Vcc = 3.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm) RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm 32 31 30 29 28 27 26 25 24 23 22 1850 RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm 15 14 13 12 11 10 9 8 7 6 5 1850 Gain (dB) 1880 Frequency (MHz) 1910 PAE (%) 1880 Frequency (MHz) 1910 RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm -35 -37 -39 -41 -43 -45 -47 -49 -51 -53 -55 1850 RMPA2265 3x3 WCDMA PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm -50 -52 -54 -56 -58 -60 -62 -64 -66 -68 -70 1850 ALCR1 (dBc) ACLR2 (dBc) 1880 Frequency (MHz) 1910 1880 Frequency (MHz) 1910 Low Power Mode (Vcc = 1.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm) RMPA2265 3x3 WCDMA PAM Vcc = 1.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm 30 29 28 27 26 25 24 23 22 21 20 1850 RMPA2265 3x3 WCDMA PAM Vcc = 1.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm 25 24 23 22 21 20 19 18 17 16 15 1850 Gain (dB) 1880 Frequency (MHz) 1910 PAE (%) 1880 Frequency (MHz) 1910 RMPA2265 3x3 WCDMA PAM Vcc = 1.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm -35 -37 -39 -41 -43 -45 -47 -49 -51 -53 -55 1850 RMPA2265 3x3 WCDMA PAM Vcc = 1.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm -50 -52 -54 -56 -58 -60 -62 -64 -66 -68 -70 1850 ACLR1 (dBc) ACLR2 (dBc) 1880 Frequency (MHz) 1910 1880 Frequency (MHz) 1910 7 RMPA2265 Rev. K www.fairchildsemi.com RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Efficiency Improvement Applications In addition to high-power/low-power bias modes, the efficiency of the PA module can be significantly increased at backed-off RF power levels by dynamically varying the supply voltage (Vcc) applied to the amplifier. Since mobile handsets and power amplifiers frequently operate at 10–20 dB back-off, or more, from maximum rated linear power, battery life is highly dependent on the DC power consumed at antenna power levels in the range of 0 to +16dBm. The reduced demand on transmitted RF power allows the PA supply voltage to be reduced for improved efficiency, while still meeting linearity requirements for WCDMA modulation with excellent margin. High-efficiency DC-DC converters are now available to implement switched-voltage operation. With the PA module in low-power mode (Vmode = 2.0V) at +16dBm output power and supply voltages reduced from 3.4V nominal down to 1.2V, power-added efficiency is more than doubled from 9 percent to 25 percent (Vcc = 1.2V) while maintaining a typical ACLR1 of -40dBc and ACLR2 of less than -54 dBc. Operation at even lower levels of Vcc supply voltage are possible with a further restriction on the maximum RF output power. DC Turn On Sequence: 1. Vcc1 = Vcc2 = 3.4V (typical) 2. Vref = 2.85V (typical) 3. High-Power: Vmode = 0V (Pout > 16dBm) Low-Power: Vmode = 2.0V (Pout < 16dBm) 8 RMPA2265 Rev. K www.fairchildsemi.com RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Evaluation Board Layout 2265 XYTT Z Materials List Qty 1 2 7 Ref 3 3 2 1 1 A/R A/R Item No. 1 2 3 4 5 5 (Alt) 6 7 7 (Alt) 8 9 Part Number G657691-1 V1 #142-0701-841 #2340-5211TN F100003 GRM39X7R102K50V ECJ-1VB1H102K C3216X5R1A335M GRM39Y5V104Z16V ECJ-1VB1C104K SN63 SN96 PC Board Description SMA Connector Terminals Assembly, RMPA2265 1000pF Capacitor (0603) 1000pF Capacitor (0603) 3.3µF Capacitor (1206) 0.1µF Capacitor (0603) 0.1µF Capacitor (0603) Solder Paste Solder Paste Vendor Fairchild Johnson 3M Fairchild Murata Panasonic TDK Murata Panasonic Indium Corp. Indium Corp. Evaluation Board Schematic 3.3 µF VCC1 50 Ohm TRL VMODE VREF 1000 pF 0.1 µF 3 4 9 (PACKAGE BASE) 1000 pF 1 2 8 7 50 Ohm TRL 1000 pF 3.3 µF VCC2 2265 XYTT Z 9 5, 6 www.fairchildsemi.com RMPA2265 Rev. K RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Package Outline I/O 1 INDICATOR TOP VIEW 1 8 2265 XYTT Z FRONT VIEW 9 1.00mm BOTTOM VIEW 2 3.00 –.050 mm SQ. 3 +.100 7 6 4 5 2 XY 265 T ZT 1.10mm MAX. 4X R.25mm 4 BACK SIDE SOLDER MASK 3 6 2.60mm 2 7 8 0.20mm DETAIL A TYP. 0.40mm 0.10mm 1 0.40mm 0.10mm 5 2 0.40mm SEE DETAIL A 1.00mm 1 Signal Description Pin # 1 2 3 4 5 6 7 8 9 Signal Name Vcc1 RF In Vmode Vref GND GND RF Out Vcc2 GND RF Input Signal Description Supply Voltage to Input Stage High Power/Low Power Switch Reference Voltage Ground Ground RF Output Signal Supply Voltage to Output Stage Ground 10 RMPA2265 Rev. K www.fairchildsemi.com RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Applications Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: • Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. • Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. • Static Sensitivity: Follow ESD precautions to protect against ESD damage: – A properly grounded static-dissipative surface on which to place devices. – Static-dissipative floor or mat. – A properly grounded conductive wrist strap for each person to wear while handling devices. • General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. • Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. • Assemble the devices within 7 days of removal from the dry pack. • During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C • If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure, at 125°C for 24 hours minimum, must be performed. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. Reflow Profile • Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A maximum heating rate is 3°C/sec. • Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 60-180 seconds at 150-200°C. • Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 20 seconds. Soldering temperatures should be in the range 255–260°C, with a maximum limit of 260°C. • Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should be subjected to no more than 15°C above the solder melting temperature for no more than 5 seconds. No more than 2 rework operations should be performed. Recommended Solder Reflow Profile 260 Ramp-Up R ate 3 °C/sec max Peak tem p 260 +0/-5 °C 10 - 20 sec Temperature (°C) 217 200 Time above li quidus temp 60 - 150 sec 150 Preheat, 150 to 200 °C 60 - 180 sec 100 Ramp-Up R ate 3 °C/sec max 50 25 Time 25 °C/sec t o peak tem p 6 mi nutes max Ramp-Do wn Rate 6 °C/sec max Time (Sec) 11 RMPA2265 Rev. K www.fairchildsemi.com RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™  Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 12 RMPA2265 Rev. K www.fairchildsemi.com