S B520-SB5100
SB520 - SB5100
Features • •
Metal to silicon rectifier, majority carrier conduction. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. Low power loss, high efficiency. High current capability, low VF. High surge capacity.
• • •
DO-201AD
COLOR BAND DENOTES CATHODE
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA = 25°C unless otherwise noted
Parameter
520 Maximum Repetitive Reverse Voltage Average Rectified Forward Current .375 " lead length @ TA = 75°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 20 530 30 540 40
Value
550 50 5.0 150 -50 to +150 -50 to +150 560 60 580 80 5100 100
Units
V A A °C °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD RθJA
Parameter
Power Dissipation Thermal Resistance, Junction to Ambient
Value
5.0 25
Units
W °C/W
Electrical Characteristics
Symbol
VF IR CT
TA = 25°C unless otherwise noted
Parameter
520 Forward Voltage @ 5.0 A Reverse Current @ rated VR Total Capacitance VR = 4.0 V, f = 1.0 MHz TA = 25°C TA = 100°C 50 500 530 0.55
Device
540 550 0.5 25 380 560 580 5100 0.67 0.85
Units
V mA mA pF
2001 Fairchild Semiconductor Corporation
SB520 - SB5100, Rev. C
S B520-SB5100
Schottky Rectifiers
(continued)
Typical Characteristics
Average Rectified Forward Current, IF [A]
4
SB520-SB540 SB550-SB5100
Peak Forward Surge Current, IFSM [A]
5
150
120
3
SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS
90
2
60
1
30
0
0
25
50 75 100 125 Ambient Temperature [ºC]
150
175
0
1
2
5 10 20 50 Number of Cycles at 60Hz
100
Figure 1. Forward Current Derating Curve
Figure 2. Non-Repetitive Surge Current
40
SB520-SB540
20 10 Reverse Current, IR [mA]
SB520-SB540 SB550-SB5100 T A = 100 º C
Forward Current, IF [A]
10
SB580-SB5100
1
SB520-SB540 T A = 75º C
SB550-SB560
0.1
TA = 25º C SB550-SB5100
1
TA = 2 5 º C Pulse Width = 300µS 2% Duty Cycle
0.01
0.1 0.4
0.5
0.6 0.7 0.8 0.9 Forward Voltage, VF [V]
1
1.1
0.001
0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics
Figure 4. Reverse Current vs Reverse Voltage
5000
Total Capacitance, CT [pF]
2000 1000
SB520-SB540
500
SB550-SB5100
200 100 0.1
1 10 Reverse Voltage, VR [V]
100
Figure 5. Total Capacitance
2001 Fairchild Semiconductor Corporation SB520 - SB5100, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™
DISCLAIMER
FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™
OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ®
SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ®
VCX™
STAR*POWER is used under license
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
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