SGP13N60UF

SGP13N60UF IGBT SGP13N60UF Ultra-Fast IGBT General Description Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5A • High input impedance Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G GCE TO-220 TC = 25°C unless otherwise noted E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ T C = 2 5° C @ TC = 100°C @ T C = 2 5° C @ TC = 100°C SGP13N60UF 600 ± 20 13 6.5 52 60 25 -55 to +150 -55 to +150 300 Units V V A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 2.0 62.5 Units °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGP13N60UF Rev. A1 SGP13N60UF Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 6.5mA, VCE = VGE IC = 6.5A, VGE = 15V IC = 13A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---375 63 13 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------20 27 70 97 85 95 180 30 32 85 168 180 165 345 25 7 8 7.5 --130 150 --270 --200 250 --500 35 12 14 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH VCC = 300 V, IC = 6.5A, RG = 50Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 6.5A, RG = 50Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 6.5A, VGE = 15V Measured 5mm from PKG ©2002 Fairchild Semiconductor Corporation SGP13N60UF Rev. A1 SGP13N60UF 60 Common Emitter T C = 25 ℃ 50 20V 30 Common Emitter VGE = 15V T C = 2 5℃ TC = 125℃ 25 Collector Current, IC [A] 40 15V Collector Current, IC [A] 8 20 30 12V 20 V GE = 10V 10 15 10 5 0 0 2 4 6 0 0.5 1 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4 12 Common Emitter V GE = 1 5V VCC = 300V Load Current : peak of square wave Collector - Emitter Voltage, VCE [V] 3 13A 9 6.5A 2 IC = 3 A 1 Load Current [A] 6 3 Duty cycle : 50% TC = 100℃ Power Dissipation = 14W 0.1 1 10 100 1000 0 0 30 60 90 120 150 0 Case Temperature, TC [℃ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 25 ℃ 20 Common Emitter T C = 125℃ Collector - Emitter Voltage, VC E [V] 16 Collector - Emitter Voltage, V E [V] C 16 12 12 8 8 4 IC = 3A 0 0 4 8 13A 6.5A 13A 4 IC = 3A 0 6.5A 12 16 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGP13N60UF Rev. A1 SGP13N60UF 600 Common Emitter V GE = 0 V, f = 1MHz T C = 25℃ Cies 300 Common Emitter V CC = 300V, VGE = ± 15V IC = 6.5A T C = 2 5℃ T C = 125℃ 500 Capacitance [pF] Ton Switching Time [ns] 400 100 300 Coes 200 Tr 100 Cres 0 1 10 30 10 1 10 100 400 Collector - Emitter Voltage, V CE [V] Gate Resistance, R G [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 600 Switching Time [ns] Common Emitter V CC = 300V, VGE = ± 15V IC = 6.5A T C = 25℃ T C = 125 ℃ 600 Eon Toff Switching Loss [uJ] Toff Eoff Eon 100 Eoff Tf 100 Tf 50 1 10 100 300 10 1 10 Common Emitter V CC = 300V, V GE = ± 15V IC = 6.5A T C = 2 5℃ T C = 125℃ 100 400 Gate Resistance, R G [Ω ] Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 200 Common Emitter VCC = 3 00V, VGE = ± 15V RG = 5 0 Ω T C = 25 ℃ TC = 1 25 ℃ 1000 Common Emitter VCC = 300V, V GE = ± 15V RG = 5 0 Ω T C = 2 5℃ TC = 125℃ 100 Switching Time [ns] Switching Time [ns] Toff Toff Tf 100 Tf Ton Tr 10 0 2 4 6 8 10 12 14 50 0 2 4 6 8 10 12 14 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current SGP13N60UF Rev. A1 SGP13N60UF 500 Common Emitter V CC = 300V, V GE = ± 15V R G = 50Ω T C = 25℃ T C = 125 ℃ 100 15 Common Emitter R L = 46 Ω Tc = 25℃ Gate - Emitter Voltage, VGE [ V ] 12 Switching Loss [uJ] 9 3 00 V 6 VCC = 100 V 3 200 V Eon Eon 10 Eoff Eoff 5 0 2 4 6 8 10 12 14 0 0 5 10 15 20 25 Collector Current, IC [A] Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 100 IC MAX. (Pulsed) 100 50us Collector Current, I C [A] 10 IC MAX. (Continuous) 1㎳ 100us Collector Current, I C [A] 10 1 DC Operation Single Nonrepetitive Pulse TC = 2 5 ℃ Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000 1 0.1 0.05 Safe Operating Area V GE=20V, T C=100 C 0.1 1 10 100 1000 o Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 10 Thermal Response, Zthjc [℃/W] 1 0.5 0.2 0.1 0.1 0.05 Pdm 0.02 0.01 single pulse 0.01 10 -5 -4 -3 -2 -1 t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 10 10 10 10 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGP13N60UF Rev. A1 SGP13N60UF Package Dimension TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGP13N60UF Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. H5