SGW6N60UF

SGW6N60UF IGBT SGW6N60UF Ultra-Fast IGBT General Description Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3A • High input impedance Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C C G G E D2-PAK E TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ T C = 2 5° C @ TC = 100°C @ T C = 2 5° C @ TC = 100°C SGW6N60UF 600 ± 20 6 3 25 30 12 -55 to +150 -55 to +150 300 Units V V A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. --Max. 4.0 40 Units °C/W °C/W Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material) ©2002 Fairchild Semiconductor Corporation SGW6N60UF Rev. A1 SGW6N60UF Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 3mA, VCE = VGE IC = 3A, VGE = 15V IC = 6A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---220 22 7 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------15 25 60 70 57 25 82 22 32 80 122 65 46 111 15 5 4 7.5 --130 150 --120 --200 300 --170 22 8 6 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH VCC = 300 V, IC = 3A, RG = 80Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 3A, RG = 80Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 3A, VGE = 15V Measured 5mm from PKG ©2002 Fairchild Semiconductor Corporation SGW6N60UF Rev. A1 SGW6N60UF 30 Common Emitter T C = 2 5℃ 25 20V 15 Common Emitter VGE = 1 5V T C = 25 ℃ TC = 1 25 ℃ Collector Current, I C [A] 15V 20 Collector Current, IC [A] 8 12 9 15 12V 6 10 V GE = 1 0V 5 3 0 0 2 4 6 0 0.5 1 10 Collector - Emitter Voltage, V CE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4 8 Common Emitter V GE = 1 5V Collector - Emitter Voltage, V E [V] C V CC = 300V Load Current : peak of square wave 3 6A 6 2 3A Load Current [A] 4 IC = 1 .5A 1 2 Duty cycle : 50% TC = 100 ℃ Power Dissipation = 9W 0.1 1 10 100 1000 0 0 30 60 90 120 150 0 Case Temperature, TC [℃ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 25 ℃ 20 Common Emitter T C = 125℃ Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, V E [V] C 16 16 12 12 8 8 6A 4 IC = 1.5A 0 3A 4 IC = 1.5A 0 0 4 8 6A 3A 12 16 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGW6N60UF Rev. A1 SGW6N60UF 400 350 300 Common Emitter V GE = 0 V, f = 1MHz T C = 2 5℃ 100 Common Emitter V CC = 300V, VGE = ± 15V I C = 3A T C = 2 5℃ T C = 125℃ Ton Capacitance [pF] Cies 250 200 150 100 50 0 1 10 30 Switching Time [ns] Tr Coes Cres 10 1 10 100 400 Collector - Emitter Voltage, V CE [V] Gate Resistance, R G [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 600 Switching Time [ns] Common Emitter VCC = 300V, VGE = ± 15V IC = 3A T C = 2 5℃ TC = 125℃ Toff Toff 300 Common Emitter V CC = 300V, V GE = ± 15V I C = 3A T C = 2 5℃ T C = 125℃ 100 Switching Loss [uJ] Eon Eoff Eoff Tf 100 10 Tf 50 1 10 100 400 5 1 10 100 400 Gate Resistance, R G [Ω ] Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 200 Common Emitter VCC = 3 00V, VGE = ± 15V RG = 8 0 Ω T C = 25 ℃ TC = 1 25 ℃ 500 Common Emitter V CC = 3 00V, V GE = ± 15V R G = 8 0Ω T C = 25 ℃ TC = 1 25 ℃ Switching Time [ns] Switching Time [ns] 100 Toff Ton 100 Tr Tf 10 1 2 3 4 5 6 50 1 2 3 4 5 6 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current SGW6N60UF Rev. A1 SGW6N60UF 200 Common Emitter V CC = 3 00V, VGE = ± 15V RG = 80Ω T C = 25 ℃ T C = 1 25 ℃ 15 Common Emitter RL = 100 Ω Tc = 25℃ Gate - Emitter Voltage, V [ V ] GE 100 12 Switching Loss [uJ] 9 300 V 6 VCC = 100 V 3 200 V Eon Eon Eoff 10 Eoff 5 1 2 3 4 5 6 0 0 3 6 9 12 15 Collector Current, IC [A] Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 50 Ic MAX. (Pulsed) 10 50 50us Ic MAX. (Continuous) 1㎳ 100us Collector Current, I C [A] 1 DC Operation Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000 Collector Current, IC [A] 10 1 0.1 Safe Operating Area VGE =20V, TC=100 C 0.1 1 10 100 1000 o 0.01 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 10 Thermal Response, Zthjc [℃/W] 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC Pdm single pulse 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGW6N60UF Rev. A1 SGW6N60UF Package Dimension D2-PAK (0.40) 9.90 ±0.20 4.50 ±0.20 1.30 –0.05 +0.10 1.20 ±0.20 9.20 ±0.20 15.30 ±0.30 1.40 ±0.20 2.00 ±0.10 0.10 ±0.15 2.54 ±0.30 9.20 ±0.20 SGW6N60UF Rev. A1 2.40 ±0.20 4.90 ±0.20 (0.75) 1.27 ±0.10 2.54 TYP 0.80 ±0.10 2.54 TYP 10.00 ±0.20 (8.00) (4.40) 0° ~3 ° +0.10 0.50 –0.05 10.00 ±0.20 15.30 ±0.30 (1.75) (2XR0.45) 0.80 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation 4.90 ±0.20 (7.20) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. H5