Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V n Lower RDS(ON) : 0.362 Ω (Typ.)
SFR/U9014
BVDSS = -60 V RDS(on) = 0.5 Ω ID = -5.3 A
D-PAK
2 1 3 1
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
o Total Power Dissipation (TA=25 C) * o o
Value -60 -5.3 -3.7
1 O 2 O 1 O 1 O 3 O
o
Units V A A V mJ A mJ V/ns W W W/ C
o
21 ±30 120 -5.3 2.4 -5.5 2.5 24 0.19 - 55 to +150
Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
TJ , TSTG TL
o
C
300
Thermal Resistance
Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 5.21 50 110
o
Units C/W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. C
SFR/U9014
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units -60 --2.0 ------------------0.05 ------2.2 270 90 25 10 19 21 16 9 1.8 4.2 ---4.0 -100 100 -10 -100 0.5 -350 135 35 30 50 50 40 11 --nC ns pF µA Ω S V
o
P-CHANNEL POWER MOSFET
Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-20V VGS=20V VDS=-60V VDS=-48V,TC=125 C VGS=-10V,ID=-2.7A VDS=-30V,ID=-2.7A
4 O 4 O
o
V/ C ID=-250µA V nA
VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-30V,ID=-6.7A, RG=24 Ω See Fig 13 VDS=-48V,VGS=-10V, ID=-6.7A See Fig 6 & Fig 12
45 OO 45 OO
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
Min. Typ. Max. Units --------75 0.17 -5.3 -21 -3.8 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-5.3A,VGS=0V TJ=25 C,IF=-6.7A diF/dt=100A/µs
4 O
o o
O
4
Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 L=5.0mH, I =-5.3A, V =-25V, R =27Ω *, Starting T =25oC O AS DD G J 3 _ _ _ O ISD < -6.7A, di/dt < 200A/µs, VDD< BVDSS , Starting TJ =25oC 4 _ O Pulse Test : Pulse Width = 250µs, Duty Cycle< 2% 5 O Essentially Independent of Operating Temperature
P-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
VGS Top : -1 V 5 -1 V 0 - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V
SFR/U9014
Fig 2. Transfer Characteristics
1 0
1
11 0
-ID , Drain Current [A]
-ID , Drain Current [A]
1 0 oC 5 10 0 2 oC 5 @Nts: oe 1 V =0V . GS 2 V =-0V . DS 3 us et 3 2 0 µs P l e T s .5 6 8 1 0
10 0
@Nts: oe 1 2 0 µs P l e T s .5 us et 2 T = 2 oC .C 5 1 -1 -1 0 1 0 10 0 11 0
- 5 oC 5 1 -1 0 2 4
-VDS , Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
12 .
Fig 4. Source-Drain Diode Forward Voltage
-IDR , Reverse Drain Current [A]
RDS(on) , [ Ω ] Drain-Source On-Resistance
11 0
09 . V =-0V 1 GS 06 .
10 0 1 0 oC 5 2 oC 5 @Nts: oe 1 V =0V . GS 2 2 0 µs P l e T s .5 us et
03 . V =-0V 2 GS 00 . 0 5 1 0 1 5 @ N t : T = 2 oC oe J 5 2 0 2 5
1 -1 0
05 .
10 .
15 .
20 .
25 .
30 .
35 .
40 .
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
50 0 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd C iss 30 0 C oss
Fig 6. Gate Charge vs. Gate-Source Voltage
20 0 C rss
@Nts: oe 1 V =0V . GS 2 f=1Mz . H
-VGS , Gate-Source Voltage [V]
40 0
1 0
Capacitance [pF]
V =-2V 1 DS V =-0V 3 DS V =-8V 4 DS
5
10 0
@Nts:I =67A oe D -. 0 0 2 4 6 8 1 0
00 1 0
11 0
-VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
SFR/U9014
Fig 7. Breakdown Voltage vs. Temperature
12 . 25 .
P-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
-BVDSS , (Normalized) Drain-Source Breakdown Voltage
RDS(on) , (Normalized) Drain-Source On-Resistance
20 .
11 .
15 .
10 .
10 . @Nts: oe 1 V =-0V . GS 1 2 I =-. A . D 34 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7
09 .
@Nts: oe 1 V =0V . GS 2 I = - 5 µA . D 20 -0 5 -5 2 0 2 5 5 0 7 5 10 0
o
05 .
08 . -5 7
15 2
10 5
15 7
00 . -5 7
TJ , Junction Temperature [ C]
TJ , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area
-ID , Drain Current [A]
12 0 Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y
Fig 10. Max. Drain Current vs. Case Temperature
6
-ID , Drain Current [A]
12 0
5
11 0 1m s 1m 0s 10 0 @Nts: oe 1 T = 2 oC .C 5 2 T = 1 0 oC .J 5 3 Snl Ple . ige us 1 -1 0 0 1 0 D C
01m .s
4
3
2
1
11 0
0 2 5
5 0
7 5
10 0
15 2
10 5
-VDS , Drain-Source Voltage [V]
Tc , Case Temperature [oC]
Fig 11. Thermal Response
Thermal Response
101
D=0.5 @ Notes : 1. Zθ J C (t)=5.21 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Zθ J C (t)
P. DM t1. t2.
100
0.2 0.1 0.05 0.02
Z (t) ,
θ JC
10- 1
0.01
single pulse
10- 5
10- 4
10- 3
10- 2
10- 1
100
101
t 1 , S quare Wave Pulse Duration
[sec]
P-CHANNEL POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
SFR/U9014
“ Current Regulator ”
50KΩ 12V 200nF 300nF
Same Type as DUT
VGS Qg
-10V
VDS VGS DUT
-3mA
Qgs
Qgd
R1
Current Sampling (IG) Resistor
R2
Current Sampling (ID) Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL Vout Vin RG DUT -10V Vout
90%
t on
t off tr td(off) tf
VDD
( 0.5 rated VDS )
td(on)
Vin
10%
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD
tp
ID VDD
Time VDS (t)
RG DUT -10V
tp
C
VDD IAS BVDSS
ID (t)
SFR/U9014
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
P-CHANNEL POWER MOSFET
+ VDS DUT -IS L Driver RG VGS
Compliment of DUT (N-Channel)
VGS
VDD
• dv/dt controlled by “RG” • IS controlled by Duty Factor “D”
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
Body Diode Reverse Current
IS ( DUT )
IRM
di/dt IFM , Body Diode Forward Current
Vf VDS ( DUT )
Body Diode Forward Voltage Drop Body Diode Recovery dv/dt
VDD
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Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1