FMA501

Preliminary Data Sheet • FEATURES ♦ ♦ ♦ ♦ ♦ ♦ DC – 20 GHz Frequency Bandwidth 17dB Small Signal Gain 8 Vpp Output Voltage -12 dB input/output return loss Chip Size: 1.18 x 2.3 mm Minimal Group Delay Variation FMA501 OC-192 MODULATOR DRIVER AMPLIFIER • DESCRIPTION AND APPLICATIONS The Filtronic Solid State FMA501 is a medium power pHEMT amplifier that operates from DC to 20 GHz. This nine-stage travelling wave amplifier provides 17 dB nominal small signal gain and 8 V peak-to-peak NRZ output at bit rates to 12.5 Gb/sec. The FMA501 is designed as the output stage for OC-192 MZ modulator driver amplifiers for optical data communication applications, and can be cascaded with the FMA500 Pre-Driver MMIC to provide 30 dB of voltage gain. • ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C (VDD = +8.0V, VGG = -3.0V; VGC = +1.5V; ZIN = ZOUT = 50Ω) Parameter 3dB Operating Bandwidth Small Signal Gain Operating Current Input Return Loss Output Return Loss Gain Control Group Delay Variation Rise/Fall time, 20%-80% Output Voltage at Saturation Saturated Output Power Symbol BW S21 IOP S11 S22 GC ∆τgrp τR/F VOUT PSAT 10Gb/sec, NRZ, VIN = 2Vpp VIN = 2Vpp VGC = 0V to 1.5V Over Bandwidth Test Conditions Min Typ 20 17 220 -12 -12 6 ±20 20 8 25.5 30 Max Units GHz dB mA dB dB dB ps ps V dBm Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 3/22/02 Email: sales@filss.com Preliminary Data Sheet • ABSOLUTE MAXIMUM RATINGS Parameter Drain Voltage Operating Current RF Input Power Channel Operating Temperature Storage Temperature Maximum Assembly Temperature (1 min. max.) Symbol VDD IOP PIN TCH TSTG TMAX Test Conditions TAmbient = 22 ± 3 °C TAmbient = 22 ± 3 °C TAmbient = 22 ± 3 °C TAmbient = 22 ± 3 °C — — -65 Min FMA501 OC-192 MODULATOR DRIVER AMPLIFIER Max 8.5 250 12 150 165 300 Units V mA dBm ºC ºC ºC Notes: • Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. • Recommended Continuous Operating Limits should be observed for reliable device operation. • This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. • MEASURED PERFORMANCE: 10 Gb/s NRZ Eye Test (VDD = +8.0V, VGG = -3.0V; VGC = +1.5V; ZIN = ZOUT = 50Ω) Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 3/22/02 Email: sales@filss.com Preliminary Data Sheet • ASSEMBLY DIAGRAM FMA501 OC-192 MODULATOR DRIVER AMPLIFIER GND Chip capacitor: 100nF VDD=7~8V Inductor for drain = 300uH Gate bias: VGG = -3.0 V Gain control: VGC = 1.5 V Notes: • Apply VGG first, then VGC and VDD. • Disconnect VGC first, then VDD and VGG when turning off. • Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is recommended. Ultrasonic bonding is not recommended. • The recommended die attach is Ablebond silver epoxy, the stabilize bake temperature is set at 150°C for 45 minutes. • Bond on bond or stitch bonds acceptable. • Conductor over conductor acceptable. Conductors must not short. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 3/22/02 Email: sales@filss.com Preliminary Data Sheet • MECHANICAL OUTLINE FMA501 OC-192 MODULATOR DRIVER AMPLIFIER Notes: • All units are in microns (µm). • All pads are 100 X 100 µm2. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 3/22/02 Email: sales@filss.com