FMS2011-000-EB

Preliminary Data Sheet 1.1 FMS2011 SP6T GaAs Multi-Band GSM Antenna Switch Features: ANT ANT ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Available in die form Suitable for multi-band GSM/DCS/PCS/EDGE applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS power levels Very high Tx-Rx isolation >45dB typ. at 1.8GHz Very high Tx-Tx isolation >30dB typ. at 1.8GHz Very low Tx Insertion loss Very low control current RX1 TX1 VTX1 VRX1 RX2 VRX2 RX3 VTX2 TX2 VRXC VRX3 RX4 VRX4 Description and Applications: The FMS2011 is a low loss, high power and linear single pole six throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology which offers leading edge performance optimised for switch applications. The FMS2011 is designed for use in dual, tri and quad – band GSM handset antenna switch modules and RF front-end modules. Electrical Specifications: Parameter Tx Insertion Loss (TAMBIENT = 25°C,Vcontrol = 0V/2.5V, ZIN = ZOUT = 50Ω) Test Conditions 0.5 – 1.0 GHz 1.0 – 2.0 GHz Min __ __ __ __ __ 30 25 45 40 __ __ Typ 0.5 0.6 0.6 0.8 23 33 31 50 45 -75 -75 Max 0.7 0.9 0.8 1.2 __ __ __ __ __ -70 -70 Units dB dB dB dB dB dB dB dB dB dBc dBc Rx Insertion Loss 0.5 – 1.0 GHz 1.0 – 2.0 GHz Return Loss Isolation TX-RX Isolation TX-TX 2nd Harmonic Level 0.5 – 2.5 GHz 0.5 – 1.0 GHz 1.0 – 2.0 GHz 0.5 – 1.0 GHz 1.0 – 2.0 GHz 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +33 dBm, 100% Duty Cycle (17:1 VSWR) 3rd Harmonic Level 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +33 dBm, 100% Duty Cycle (17:1 VSWR) __ __ -75 -75 -70 -70 dBc dBc Switching speed : Trise, Tfall Ton, Toff 10% to 90% RF and 90% to 10% RF 50% control to 90% RF and 50% control to 10% RF __ __ < 0.3 < 1.0 __ __ µs µs Note: External DC blocking capacitors are required on all RF ports (typ: 100pF). All unused ports terminated in 50Ω. 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com Preliminary Data Sheet 1.1 FMS2011 Absolute Maximum Ratings: Parameter Max Input Power Control Voltage Operating Temperature Storage Temperature Absolute Maximum +38dBm +8.5V -40°C to +100°C -55°C to +150°C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. Truth Table: VRXC Low Low High High High High VRX4 Low Low Low Low Low High VTX2 Low High Low Low Low Low VRX3 Low Low Low Low High Low VRX1 Low Low High Low Low Low VRX2 Low Low Low High Low Low VTX1 High Low Low Low Low Low ON PATH ANT-TX1 ANT-TX2 ANT-RX1 ANT-RX2 ANT-RX3 ANT-RX4 Note: ‘High’ ‘Low’ = = +2.5V to +5V 0V to +0.2V 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com Preliminary Data Sheet 1.1 FMS2011 Pad and Die Layout: H B C D A F G E I O N Q J P L K M Pad Number A Pad Name VM Description Common Receive Switch Control Voltage Pin Coordinates (µm) 99, 576 B C D E F G H I J K L M N O P Q VRX4 VTX2 VRX3 VRX1 VRX2 VTX1 TX2 TX1 ANT RX4 RX3 RX2 RX1 GND GND GND RX4 Control Voltage TX2 Control Voltage RX3 Control Voltage RX1 Control Voltage RX2 Control Voltage TX1 Control Voltage TX2 RF Output TX1 RF Output Antenna RX4 RF Output RX3 RF Output RX2 RF Output RX1 RF Output Ground 1 Ground 1 Ground RXC 98, 919 98, 805 98, 689 103, 230 98, 459 105, 347 130, 1037 127, 114 509, 958 779, 1056 779, 856 779, 302 779, 101 605, 141 620, 959 777, 511 Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Die Size (µm) 900 x 1150 Die Thickness (µm) 150 µm Min. Bond Pad Pitch(µm) 111 Min. Bond pad opening (µm) 70 x 70 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com Preliminary Data Sheet 1.1 FMS2011 Typical Measured Performance Curves: TX1 Loss RX1 Loss TX1-RX1 Isolation TX2-RX3 Isolation TX1-ANT Isolation TX2-ANT Isolation TX Harmonic Level 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com Preliminary Data Sheet 1.1 FMS2011 Evaluation Board Data: C2 C2 C2 C2 C2 C2 C2 C1 C3 C1 C1 C1 C1 C1 C1 C3 C3 C3 C3 C3 C3 BOM Label C1 C2 C3 Component Capacitor, 47pF, 0402 Capacitor, 470F, 0603 Capacitor, 100pF, 0402 5 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com Preliminary Data Sheet 1.1 FMS2011 Ordering Information: Part Number FMS2011-000-WP FMS2011-000-GP FMS2011-000-EB FMS2011-000-FF Description Die- waffle pak Die- gel pak Die mounted on evaluation board Wafer mounted on film frame Preferred Assembly Instructions: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com