CRCW1206100RFKTA

Freescale Semiconductor Technical Data Document Number: MRF5S4125N Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 500 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 465 MHz: VDD = 28 Volts, IDQ = 1100 mA, Pout = 25 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 23 dB Drain Efficiency — 30.2% ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 125 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5S4125NR1 MRF5S4125NBR1 450 - 480 MHz, 25 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 MRF5S4125NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 MRF5S4125NBR1 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TJ Value - 0.5, +65 - 0.5, +15 - 65 to +150 200 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 90°C, 125 W CW Case Temperature 90°C, 25 W CW Symbol RθJC Value (2,3) 0.33 0.43 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. MRF5S4125NR1 MRF5S4125NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.5 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss — — 2.41 74.61 — — pF pF VGS(th) VGS(Q) VDS(on) 2 3.5 0.05 3 4.25 0.175 4 5 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 10 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 25 W Avg. N - CDMA, f = 465 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. Gps ηD ACPR IRL 22 28 — — 23 30.2 - 47.6 - 15 25 — - 45 -9 dB % dBc dB MRF5S4125NR1 MRF5S4125NBR1 2 RF Device Data Freescale Semiconductor VBIAS C5 R1 B1 VSUPPLY + R2 C6 B2 L3 C13 C14 C15 C16 Z19 RF INPUT R3 Z1 C1 C2 Z3 Z4 Z5 C3 C4 Z2 L1 Z6 Z7 L2 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z18 C11 C9 C10 Z16 Z17 Z20 RF OUTPUT DUT C7 C8 Z21 C12 Z22 Z15 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9 Z10 Z11 Z12 0.186″ 0.206″ 1.171″ 0.275″ 0.985″ 0.130″ 0.131″ 0.675″ 0.397″ 0.071″ 0.008″ x 0.084″ x 0.084″ x 0.084″ x 0.084″ x 0.084″ x 0.084″ x 0.084″ x 0.504″ x 0.656″ x 0.084″ x 0.084″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 PCB 0.063″ x 0.084″ Microstrip 0.315″ x 0.084″ Microstrip 0.473″ x 0.084″ Microstrip 0.522″ x 0.084″ Microstrip 0.448″ x 0.084″ Microstrip 0.628″ x 0.084″ Microstrip 0.291″ x 0.084″ Microstrip 0.318″ x 0.084″ Microstrip 0.202″ x 0.084″ Microstrip 0.190″ x 0.084″ Microstrip Arlon AD250, 0.030″, εr = 2.5 Figure 1. MRF5S4125NR1(NBR1) Test Circuit Schematic Table 6. MRF5S4125NR1(NBR1) Test Circuit Component Designations and Values Part B1, B2 C1, C6, C12, C13 C2, C10 C3, C9 C4 C5, C14, C15 C7 C8 C11 C16 L1, L2 L3 R1 R2 R3 Description Ferrite Beads, Short 120 pF Chip Capacitors 0.8 - 8.0 pF, Variable Capacitors, Gigatrim 20 pF Chip Capacitors 8.2 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 27 pF Chip Capacitor 47 pF Chip Capacitor 3.3 pF Chip Capacitor 22 μF, 35 V Tantalum Capacitor 1.6 nH Inductors 27 nH Inductor 1000 Ω, 1/4 W Chip Resistor 10 kΩ, 1/4 W Chip Resistor 100 Ω, 1/4 W Chip Resistor Part Number 2743019447 ATC600B121BT250XT 27291SL ATC600B200BT250XT ATC600B8R2BT250XT GRM55DR61H106KA88L ATC600B270BT250XT ATC600B470BT250XT ATC600B3R3BT250XT T491X226K035A5 0906 - 2 1812SMS - 27N_L CRCW12061001FKTA CRCW12061002FKTA CRCW1206100RFKTA Manufacturer Fair - Rite ATC Johanson ATC ATC Murata ATC ATC ATC Kemet Coilcraft Coilcraft Vishay Vishay Vishay MRF5S4125NR1 MRF5S4125NBR1 RF Device Data Freescale Semiconductor 3 C6 B1 C14 R1 C15 B2 R2 C13 C16 C5 CUT OUT AREA L3 R3 C1 C2 L1 L2 C3 C4 C8 C7 C9 C11 C10 C12 MRF5S4125N Rev. 1 Figure 2. MRF5S4125NR1(NBR1) Test Circuit Component Layout MRF5S4125NR1 MRF5S4125NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) 0 −5 −10 −15 −20 ηD, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) 0 −5 −10 −15 −20 IDQ = 550 mA 562.5 mA 825 mA −40 1375 mA 1100 mA −50 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 300 1 10 100 200 300 Pout, OUTPUT POWER (WATTS) PEP 25 24 Gps, POWER GAIN (dB) 23 22 21 ACPR 20 19 IRL 18 −60 ALT1 430 440 450 460 470 480 490 −65 500 17 420 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) ηD Gps VDD = 28 Vdc, Pout = 25 W (Avg.) IDQ = 1100 mA, Single−Carrier N−CDMA 36 32 28 24 −45 −50 −55 f, FREQUENCY (MHz) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 25 Watts Avg. 25 24 Gps, POWER GAIN (dB) 23 22 21 20 19 18 17 420 ACPR IRL ALT1 430 440 450 460 470 480 490 Gps VDD = 28 Vdc, Pout = 58 W (Avg.) IDQ = 1100 mA, Single−Carrier N−CDMA 1.2288 MHz, Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) ηD 52 48 44 40 −20 −30 −40 −50 −60 500 f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 58 Watts Avg. 25 24 Gps, POWER GAIN (dB) 23 22 21 20 19 18 VDD = 28 Vdc f1 = 465 MHz, f2 = 467.5 MHz Two −Tone Measurements, 2.5 MHz Tone Spacing 1375 mA 1100 mA 825 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1650 mA −10 VDD = 28 Vdc f1 = 465 MHz, f2 = 467.5 MHz Two −Tone Measurements, 2.5 MHz Tone Spacing −20 −30 550 mA Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF5S4125NR1 MRF5S4125NBR1 RF Device Data Freescale Semiconductor 5 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) −10 −20 −30 3rd Order −40 −50 −60 −70 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 300 5th Order 7th Order VDD = 28 Vdc f1 = 465 MHz, f2 = 467.5 MHz Two −Tone Measurements, 2.5 MHz Tone Spacing −10 VDD = 28 Vdc, Pout = 120 W (PEP) IDQ = 1100 mA, Two −Tone Measurements −20 (f1 + f2)/2 = Center Frequency of 465 MHz IM3 −U −30 IM5 −L IM7 −U −50 IM7 −L IM3 −L IM5 −U −40 −60 1 10 TWO −TONE SPACING (MHz) 100 Figure 7. Intermodulation Distortion Products versus Output Power 59 58 Pout, OUTPUT POWER (dBm) 57 56 55 54 P1dB = 51.16 dBm (130.62 W) 53 52 51 50 49 24 25 26 27 28 29 30 31 Figure 8. Intermodulation Distortion Products versus Tone Spacing Ideal P6dB = 52.98 dBm (198.6 W) P3dB = 52.26 dBm (168.27 W) Actual VDD = 28 Vdc, IDQ = 1100 mA CW f = 465 MHz 32 33 34 35 36 Pin, INPUT POWER (dBm) Figure 9. Pulsed CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 45 40 35 30 25 20 15 10 5 0 1 85_C 25_C 10 Pout, OUTPUT POWER (WATTS) AVG. −30_C 60 VDD = 28 Vdc, IDQ = 1100 mA, f = 465 MHz Single −Carrier N−CDMA 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 85_C 25_C Gps TC = − 30_C 85_C ηD ALT1 ACPR −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 −75 ACPR (dBc), ALT1 (dBc) 25_C −30_C Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF5S4125NR1 MRF5S4125NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 26 25 Gps, POWER GAIN (dB) 24 23 22 21 20 19 18 17 1 10 Pout, OUTPUT POWER (WATTS) CW 100 ηD VDD = 28 Vdc IDQ = 1100 mA f = 465 MHz 25_C 85_C Gps TC = − 30_C 25_C −30_C 90 80 ηD, DRAIN EFFICIENCY (%) 70 85_C 60 50 40 30 20 10 0 300 Gps, POWER GAIN (dB) 24 IDQ = 1100 mA f = 465 MHz 23 22 21 20 0 50 VDD = 24 V 100 150 28 V 200 32 V 250 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power Figure 12. Power Gain versus Output Power 109 108 MTTF (HOURS) 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 25 W Avg., and ηD = 30.2%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. Figure 13. MTTF versus Junction Temperature MRF5S4125NR1 MRF5S4125NBR1 RF Device Data Freescale Semiconductor 7 N - CDMA TEST SIGNAL 100 10 −10 −20 −30 1.2288 MHz Channel BW PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK −TO−AVERAGE (dB) IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) −40 −50 −60 −70 −80 −90 −100 −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 −ACPR in 30 kHz Integrated BW −ACPR in 30 kHz Integrated BW Figure 14. Single - Carrier CCDF N - CDMA f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRF5S4125NR1 MRF5S4125NBR1 8 RF Device Data Freescale Semiconductor f = 545 MHz Zload f = 545 MHz Zsource f = 385 MHz Z o = 25 Ω f = 385 MHz VDD = 28 Vdc, IDQ = 1100 mA, Pout = 25 W Avg. f MHz 385 405 425 445 465 485 505 525 545 Zsource W 4.735 + j2.917 4.073 + j4.202 3.987 + j5.466 3.909 + j6.743 4.094 + j7.661 4.128 + j9.483 4.446 + j11.620 4.921 + j13.710 5.437 + j15.838 Zload W 2.229 + j5.627 1.809 + j6.123 1.842 + j6.684 1.767 + j7.187 1.822 + j7.338 1.566 + j8.397 1.525 + j9.787 1.769 + j11.120 2.023 + j12.467 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF5S4125NR1 MRF5S4125NBR1 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS B E1 E3 2X A GATE LEAD DRAIN LEAD D1 4X D e b1 aaa M C A 4X D2 c1 H DATUM PLANE ZONE J 2X 2X E F A1 A2 E2 E5 E4 2X A NOTE 7 C SEATING PLANE PIN 5 NOTE 8 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 4 D3 3 MRF5S4125NR1 MRF5S4125NBR1 10 RF Device Data Freescale Semiconductor ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW 1 2 DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF5S4125NR1 STYLE 1: PIN 1. 2. 3. 4. 5. MRF5S4125NR1 MRF5S4125NBR1 RF Device Data Freescale Semiconductor 11 MRF5S4125NR1 MRF5S4125NBR1 12 RF Device Data Freescale Semiconductor MRF5S4125NR1 MRF5S4125NBR1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Jan. 2007 • Initial Release of Data Sheet Description MRF5S4125NR1 MRF5S4125NBR1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRF5S4125NR1 MRF5S4125NBR1 Document Number: RF Device Data MRF5S4125N Rev. 0, 1/2007 Freescale Semiconductor 15